含锂磷酸盐LiMPO_4(M=Mn、Co、Ni)的制备方法

含锂磷酸盐LiMPO4(M=Mn、Co、Ni)是具有有序的橄榄石结构的材料,用于锂离子电池材料具有约170mAh·g-1的理论容量,制备LiMPO4的方法,有固相合成法,水热法、溶胶-凝胶法,LiMPO4在锂离子电池材料、磁电材料等中得到了不同程度的研究,本文从合成、性能、改性等方面总结了近年来有关LiMPO4的研究进展,并对该材料的研究与应用前景进行了展望。

Effects of melt viscosity on enrichment and separation of primary silicon from Al-Si melt

The effects of melt viscosity on the enrichment and separation of Si crystals from Al–Si melt during an electromagnetic solidification process were investigated. Both the enrichment efficiency and the separation were found to be strongly dependent on the melt viscosity. A high melt viscosity was beneficial to the enrichment of primary silicon, whereas a low melt viscosity facilitated the separation process. A new enrichment mechanism was proposed in order to clarify the influence of melt viscosity, and an improved process for achieving high-efficiency enrichment of Si crystals via control of the melt viscosity was also proposed. Additionally, the morphology of Si crystals was found to change from spheroidal to plate-like in shape owing to the difference in viscosities in different regions.

From electromagnetic bandgap to left-handed metamaterials:modelling and applications

In this paper, numerical modelling of left-handed materials （LHMs） is presented using in-house and commercial software packages. Approaches used include the finite-difference time-domain （FDTD） method, finite element method （FEM） and method of moments （MoMs）. Numerical simulation includes verification of negative refraction and ＂perfect lenses＂ construction, investigation of evanescent wave behaviour in layered LHMs, reversed Shell＇s Law in electromagnetic band gap （EBG）-like structures and construction of LHMs using modified split ring resonators （SRRs）. Numerical results were verified to be in good agreement with theory, At the end of this paper, potential applications of LHMs in microwave engineering are discussed.

360-nm Photoluminescence from Silicon Oxide Films Embedded with Silicon Nanocrystals

Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescenee（PL） from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360 nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanoerystals was discussed.

Photoluminescence origin of nanocrystalline SiC films

The nanocrystalline SiC films were prepared on Si then annealed at 800℃ and 1 000℃ for 30 minutes （111） substrates by rf magnetron sputtering and in a vacuum annealing system. The crystal structure and crystallization of as-annealed SiC films were determined by the Fourier transform infrared （FIR） absorption spectra and the X-ray diffraction （XRD） analysis. Measurement of photoluminescence （PL） of the nanocrystalline SiC （nc-SiC） films shows that the blue light with 473 nm and 477 nm wavelengths emitted at room temperature and that the PL peak shifts to shorter wavelength side and the PL intensity becomes stronger as the annealing temperature decreases. The time-resolved spectrum of the PL at 477 nm exhibits a bi-exponential decay process with lifetimes of 600 ps and 5 ns and a characteristic of the direct band gap. The strong blue light emission with short PL lifetimes suggests that the quantum confinement effect of the SiC nanocrystals resulted in the radiative recombination of the direct optical transitions.

Propagation property of electromagnetic waves in fractal cantor photonic crystals

Two novel structures of fractal Cantor multilayer with defects are presented. The Optical transmission matrix method is used to calculate the transmittance and the reflectance. Compared with the general Cantor multilayer, these novel structures have wider stopbands and show super narrow bands in the middle of the wider stopbands, which can be used as super narrow bandpass filters. The pass band can be less than 0.6 nm near the infrared wavelength of 1530 nm when there is an embedded defect in the cantor multilayer. The optical transmission in the central wavelength is higher than 99 %, which means a very low insert loss. If there are three layers, three super narrow peaks can be found in the middle of the stopband. The central wavelengths are respectively 1232.4 nm, 1372.8 nm and 1538.3 nm. It is much better than other kinds of narrow band filters and it may be used in the optical communications.

Study of transport behavior for Fe-doping La0.67Ca0.33MnO3 perovskite manganese

Systematic studies of the transport properties of La0.67Ca0.33Mn1- FexO3 (x=0?0.3) systems showed that with x increasing Fe-doping content x the resistance increases and the insulator-metal transition temperature moves to lower temperature. For small doping content, the transport property satisfies metal transport behavior below the transition tem- perature, and above the transition temperature it satisfies the small polaron model. This behavior can be explained by Fe3+ doping, which easily forms Fe3+-O2 -Mn4+channel, suppressing the double exchange Mn3+-O2 -Mn4+ channel and enhancing ? ? the spin scattering of Mn ions induced by antiferromagnetic clusters of Fe ions.

Current Oscillation and dc-Voltage-Controlled Chaotic Dynamics in Semiconductor Superlattices

We report a detailed theoretical study of current oscillation and de-voltage-controlled chaotic dynamics in doped GaAs/AlAs resonant tunneling superlattices under crossed electric and magnetic fields. When the superlattice is biased at the negative differential velocity region, current self-oscillation is observed with proper doping concentration. The current oscillation mode and oscillation frequency can be affected by the dc voltage bias, doping density, and magnetic field. When an ac electric field with fixed amplitude and frequency is also applied to the system, different nonlinear properties show up in the external circuit with the change of dc voltage bias. We carefully study these nonlinear properties with different chaos-detecting methods.

Theoretical Studies of g Factors and Defect Structures for Cubic, Tetragonal, and Orthorhombic Fe^＋ Centers in Alkali Halides MX （M=Li, Na; X = F, C1）

The EPR 9 factors for cubic, tetragonal and orthorhombic Fe^＋ centers in alkali halides MX （M= Li, Na; X = F, CI） are calculated from second-order perturbation formulas of g factors based on cluster approach for 3d^7 ions in three symmetries. From calculations, the g factors of these Fe^＋ centers in MX crystals are reasonably explained and the defect structural data for the tetragonal and orthorhombic Fe^＋ centers are estimated. The results are discussed.

Theoretical Studies of Electron Paramagnetic Resonance Parameters for Cr^4＋ Ions in Ca2GeO4 Crystals

The electron paramagnetic resonance (EPR) parameters (zero-Geld splitting Dand g factors g_‖, g_⊥) of Cr~(4+) ions in Ca_2 GeO_4 crystals have been calculated from thecomplete high-order perturbation formulas of EPR parameters for a 3d~2 ion in trigonal MX_4clusters. In these formulas, in addition to the contributions to EPR parameters from the widely usedcrystal-field (CF) mechanism, the contributions from the charge-transfer (CT) mechanism (which areoften neglected) are included. From the calculations, it is found that for the high valence state3d~n ions in crystals, the reasonable explanation of EPR parameters (in particular, the g factors)should take both the CF and CT mechanisms into account.

A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer

Flexible magnetoelectric （ME） materials have been studied for new applications such as memory, energy harvesters, and magnetic field sensors. Herein, with the widely studied and progressive advantages of ME phenomena in the multiferroic field, we demonstrate a new approach for utilizing flexible ME materials as gate dielectric layers in ME organic field-effect transistors （ME-OFET） that can be used for sensing a magnetic field and extracting the ME properties of the gate dielectric itself. The magnetoelectric nanohybrid gate dielectric layer comprises sandwiched stacks of magnetostrictive CoFe2O4 nanoparticles and a highly piezoelectric poly（vinylidene fluoride-co-trifluoroethylene） layer. While varying the magnetic field applied to the ME gate dielectric, the ME effect in the functional gate dielectric modulates the channel conductance of the ME-OFET owing to a change in the effective gate field. The clear separation of the ME responses in the gate dielectric layer of ME-OFET from those of the other parameters was demonstrated using the AC gate biasing method and enabled the extraction of the ME coefficient of ME materials. Additionally, the device shows high stability after cyclic bending of 10,000 cycles at a banding radius of 1.2 cm. The device has significant potential for not only the extraction of the intrinsic characterization of ME materials but also the sensing of a magnetic field in integrated flexible electronic systems.

Large and anisotropic linear magnetoresistance in bulk stoichiometric Cd_3As_2 crystals

Cd3As2 was recently identified as a novel three-dimensional （3D） topological semimetal hosting the long-pursuing 3D Dirac Fermion. Crystals of Cd3As2 grown preferentially along the [100] and [112] directions were obtained through the modified chemical vapor transfer growth method, thus allowing the examination of transport anisotropy. The resistivity and magnetore- sistance （MR） are basically linear with respect to magnetic field （H） in the measured temperature range of 2-300 K irrespective of the directions. The linear resistivity and MR are significantly anisotropic not only along [100] and [112] directions but also with respect to tilt angle between the growth directions and H, thus providing transport signatures of the 3D Dirac Fermion as well as the possible linear and anisotropic change of Weyl Fermi surface in H. Very large MR along the [100] direction is observed, even approaching 3100% at 2 K and 14 kOe （10e = 79.5775 A m^-l）. The results would be helpful in renewing interest in studying emergent phenomena arising from bulk 3D Dirac Fermion as well as in paving the way for Cd3As2 to be used in magnetoelectronic sensors.