We study the quantum nucleation in a nanometer-scale antiferromagnet placed in a magnetic field at an arbitrary angle. We consider the magnetocrystalline anisotropy with tetragonal symmetry and that with hexagonal sym...We study the quantum nucleation in a nanometer-scale antiferromagnet placed in a magnetic field at an arbitrary angle. We consider the magnetocrystalline anisotropy with tetragonal symmetry and that with hexagonal symmetry, respectively. Different structures of the tunneling barriers can be generated by the magnitude and the orientation of the magnetic field. We use the instanton method in the spin-coherent-state path-integral representation to calculate the dependence of the rate of quantum nucleation and the crossover temperature on the orientation and strength of the field for bulk solids and two-dimensional films of antiferromagnets, respectively. We find that the rate of quantum nucleation and the crossover temperature from thermal-to-quantum transitions depend on the orientation and strength of the external magnetic field distinctly, which can be tested by use of existing experimental techniques.展开更多
[ZnO(0.5 nm)/Co(0.6 nm)]60 multilayers were fabricated by magnetron sputtering. The magnetic, transport and optical properties were studied. The ferromagnetic state at low temperature was demonstrated. Most of the gra...[ZnO(0.5 nm)/Co(0.6 nm)]60 multilayers were fabricated by magnetron sputtering. The magnetic, transport and optical properties were studied. The ferromagnetic state at low temperature was demonstrated. Most of the grains in the samples will be unblocked when temperature is below 50K. The measured magneto-resistance at 4.8K is higher than 30%. This value is larger than any other reported data. The transport mechanism may come down to a combination of tunnelling conduction with the second-order hopping. Some small peaks on transmittance curves were found, the matter is still open.展开更多
Magnetic tunnel junction with a large tunneling magnetoresistance has attracted great attention due to its importance in the spintronics applications.By performing extensive density functional theory calculations comb...Magnetic tunnel junction with a large tunneling magnetoresistance has attracted great attention due to its importance in the spintronics applications.By performing extensive density functional theory calculations combined with the nonequilibrium Green’s function method,we explore the spin-dependent transport properties of a magnetic tunnel junction,in which a non-polar SrTiO_(3) barrier layer is sandwiched between two Heusler alloy Co_(2)MnSi electrodes.Theoretical results clearly reveal that the near perfect spin-filtering effect appears in the parallel magnetization configuration.The transmission coefficient in the parallel magnetization configuration at the Fermi level is several orders of magnitude larger than that in the antiparallel magnetization configuration,resulting in a huge tunneling magnetoresistance(i.e.>10^(6)),which originates from the coherent spin-polarized tunneling,due to the half-metallic nature of Co_(2)MnSi electrodes and the significant spin-polarization of the interfacial Ti_(3)d orbital.展开更多
基金The project supported by National Natural Science Foundation of China under Grant No.90101003China's “863” Program
文摘We study the quantum nucleation in a nanometer-scale antiferromagnet placed in a magnetic field at an arbitrary angle. We consider the magnetocrystalline anisotropy with tetragonal symmetry and that with hexagonal symmetry, respectively. Different structures of the tunneling barriers can be generated by the magnitude and the orientation of the magnetic field. We use the instanton method in the spin-coherent-state path-integral representation to calculate the dependence of the rate of quantum nucleation and the crossover temperature on the orientation and strength of the field for bulk solids and two-dimensional films of antiferromagnets, respectively. We find that the rate of quantum nucleation and the crossover temperature from thermal-to-quantum transitions depend on the orientation and strength of the external magnetic field distinctly, which can be tested by use of existing experimental techniques.
文摘[ZnO(0.5 nm)/Co(0.6 nm)]60 multilayers were fabricated by magnetron sputtering. The magnetic, transport and optical properties were studied. The ferromagnetic state at low temperature was demonstrated. Most of the grains in the samples will be unblocked when temperature is below 50K. The measured magneto-resistance at 4.8K is higher than 30%. This value is larger than any other reported data. The transport mechanism may come down to a combination of tunnelling conduction with the second-order hopping. Some small peaks on transmittance curves were found, the matter is still open.
基金partially supported by the National Natural Science Foundation of China(No.21873088 and No.11634011)the Natural Science Foundation of the Anhui Higher Education Institutions(No.KJ2010A061 and No.KJ2016A144)。
文摘Magnetic tunnel junction with a large tunneling magnetoresistance has attracted great attention due to its importance in the spintronics applications.By performing extensive density functional theory calculations combined with the nonequilibrium Green’s function method,we explore the spin-dependent transport properties of a magnetic tunnel junction,in which a non-polar SrTiO_(3) barrier layer is sandwiched between two Heusler alloy Co_(2)MnSi electrodes.Theoretical results clearly reveal that the near perfect spin-filtering effect appears in the parallel magnetization configuration.The transmission coefficient in the parallel magnetization configuration at the Fermi level is several orders of magnitude larger than that in the antiparallel magnetization configuration,resulting in a huge tunneling magnetoresistance(i.e.>10^(6)),which originates from the coherent spin-polarized tunneling,due to the half-metallic nature of Co_(2)MnSi electrodes and the significant spin-polarization of the interfacial Ti_(3)d orbital.
