The title compound (C30H32NO4PGe), O,O-dimethyl-N-(β-triphenylgermanyl) propionyl-α-aminobenzylphosphonates was synthesized by a convenient method, and its crystal structure was determined by single-crystal X-ray di...The title compound (C30H32NO4PGe), O,O-dimethyl-N-(β-triphenylgermanyl) propionyl-α-aminobenzylphosphonates was synthesized by a convenient method, and its crystal structure was determined by single-crystal X-ray diffraction. The crystal is triclinic, space group P-1 with parameters: a=9.7753(5), b=11.5773(5), c=13.5059(6) ?, α=104.185(1),β= 95.971(1), γ =96.727(1)°, V=1457.63(12) ?3, Z=2, Mr=574.13, Dc=1.308 g/cm3, λ=0.71073 ?, μ = 1.139mm-1, and F(000)=596. The structure was solved by direct methods. The structure was refined to R=0.0257, wR=0.0705 for 5080 observed reflections with I >2σ(I).The result of structure analysis indicates that atom Ge is sp3 hydridized because the arrangement of the four carbon atoms bonded to it is a distorted tetrahedron. The geometry of the three phenyl groups linking with the Ge atom looks like a propeller form.展开更多
Si/SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) using P+ (phosphor ion) implantation technology is successfully fabricated. P+ implantation into SiGe virtual substrate induces a narrow de...Si/SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) using P+ (phosphor ion) implantation technology is successfully fabricated. P+ implantation into SiGe virtual substrate induces a narrow defect region slightly below the SiGe/Si interface,which gives rise to strongly enhanced strain relaxation of SiGe virtual substrate. X-Ray Diffraction (XRD) tests show that the degree of relaxation of SiGe layer is 96% while 85% before implantation. After annealed,the sample appeared free of Threading Dislocation densities (TDs) within the SiGe layer to the limit of Trans-mission Electron Microscopy (TEM) analysis. Atomic Force Microscope (AFM) test of strained Si channel surface shows that Root Mean Square (RMS) is 1.1nm. The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.展开更多
文摘The title compound (C30H32NO4PGe), O,O-dimethyl-N-(β-triphenylgermanyl) propionyl-α-aminobenzylphosphonates was synthesized by a convenient method, and its crystal structure was determined by single-crystal X-ray diffraction. The crystal is triclinic, space group P-1 with parameters: a=9.7753(5), b=11.5773(5), c=13.5059(6) ?, α=104.185(1),β= 95.971(1), γ =96.727(1)°, V=1457.63(12) ?3, Z=2, Mr=574.13, Dc=1.308 g/cm3, λ=0.71073 ?, μ = 1.139mm-1, and F(000)=596. The structure was solved by direct methods. The structure was refined to R=0.0257, wR=0.0705 for 5080 observed reflections with I >2σ(I).The result of structure analysis indicates that atom Ge is sp3 hydridized because the arrangement of the four carbon atoms bonded to it is a distorted tetrahedron. The geometry of the three phenyl groups linking with the Ge atom looks like a propeller form.
基金Supported by the Funds of National Key Laboratory of Analog IC (2000JS09.3.1.DZ02).
文摘Si/SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) using P+ (phosphor ion) implantation technology is successfully fabricated. P+ implantation into SiGe virtual substrate induces a narrow defect region slightly below the SiGe/Si interface,which gives rise to strongly enhanced strain relaxation of SiGe virtual substrate. X-Ray Diffraction (XRD) tests show that the degree of relaxation of SiGe layer is 96% while 85% before implantation. After annealed,the sample appeared free of Threading Dislocation densities (TDs) within the SiGe layer to the limit of Trans-mission Electron Microscopy (TEM) analysis. Atomic Force Microscope (AFM) test of strained Si channel surface shows that Root Mean Square (RMS) is 1.1nm. The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.
