期刊文献+
共找到18篇文章
< 1 >
每页显示 20 50 100
电子级多晶硅原料中痕量硼磷杂质的脱除研究进展 被引量:1
1
作者 闫可欣 姜洪涛 +3 位作者 高维群 郭晓晖 孙伟振 赵玲 《化工学报》 EI CSCD 北大核心 2024年第1期83-94,共12页
三氯氢硅和氢气中痕量硼磷杂质的含量是影响多晶硅品质的主要因素。提高硼磷杂质的脱除效率有利于电子级多晶硅的大规模生产,实现我国能源信息产业升级。综述了三氯氢硅和氢气中硼磷杂质脱除方法的研究进展,重点介绍了各类提纯方法的特... 三氯氢硅和氢气中痕量硼磷杂质的含量是影响多晶硅品质的主要因素。提高硼磷杂质的脱除效率有利于电子级多晶硅的大规模生产,实现我国能源信息产业升级。综述了三氯氢硅和氢气中硼磷杂质脱除方法的研究进展,重点介绍了各类提纯方法的特点。其中,反应-吸附-精馏耦合技术集合了精馏法和化学提纯法的优点,是三氯氢硅精制过程中最具有发展前景的方法;吸附法凭借其负载的活性物质对硼磷杂质的高选择性,成为氢气精制最常使用的工艺。最后,系统探讨了吸附剂结构特点及与吸附性能的构效关系,在此基础上总结并展望了多晶硅原料中硼磷杂质脱除面临的挑战和发展方向。 展开更多
关键词 磷杂质 吸附 蒸馏 反应精馏 三氯氢硅
下载PDF
氧氮磷杂质对硅片高温形变的影响
2
作者 谢书银 王丙义 +2 位作者 蔡爱军 李立本 张锦心 《中南工业大学学报》 CSCD 北大核心 1998年第1期58-61,共4页
通过模拟集成电路高温工艺的1200℃,1.5h后急冷热处理,研究了硅中氧、氮、磷3种杂质对硅片高温工艺过程中塑性形变的影响.实验结果表明,普通氩气氛下直拉单晶硅(ACZSi)高温弯曲度变化只是含氧很少的区熔硅(FZS... 通过模拟集成电路高温工艺的1200℃,1.5h后急冷热处理,研究了硅中氧、氮、磷3种杂质对硅片高温工艺过程中塑性形变的影响.实验结果表明,普通氩气氛下直拉单晶硅(ACZSi)高温弯曲度变化只是含氧很少的区熔硅(FZSi)的1/3左右.在含氮气氛下直拉硅(NCZSi)中,氮含量为4.5×1015cm-3的单晶尾部高温热处理弯曲度约是氮含量很小的单晶头部的1/3,重掺磷硅片热处理形变比普通硅片大得多. 展开更多
关键词 氧氮磷杂质 硅片 高温形变
下载PDF
BF_2^+离子注入时磷杂质离子污染控制的研究
3
作者 彭坤 林大成 《微细加工技术》 2008年第1期6-10,共5页
同一台离子注入机B,P离子交叉注入,残留的磷和BF3分解产生的F生成50PF+,成为难控隐患。研究指出,实际注入晶圆的平均质量数,呈以目标离子质量数为中心的正态分布;49BF2+与50PF+因质量数接近而存在可能的重叠分布区,这是出现磷污染的原因... 同一台离子注入机B,P离子交叉注入,残留的磷和BF3分解产生的F生成50PF+,成为难控隐患。研究指出,实际注入晶圆的平均质量数,呈以目标离子质量数为中心的正态分布;49BF2+与50PF+因质量数接近而存在可能的重叠分布区,这是出现磷污染的原因;指出改善质量分析器的控制精度,可在线调控以避免磷污染。通过比较发现,当质量分析器设定为49±0.5且注入高束流达800μA时,离子注入机不能侦测到临近目标质量数的杂质离子。离子注入机经80 h注入31P+后再交叉注入的老化实验准备,当引弧电流达3 100μA时,电性测试发现,质量分析器设定为49±0.3(质量分辨率m/Δm=169.3)的样品无磷污染。进一步研究了多重老化因素叠加效应,经同样的老化实验准备、引弧电流为3 100μA且注入束流为800μA时,注入剂量为2.2×1015的49BF2+,当质量分析器严控为49±0.3,经SI MS(secondaryion mass spectroscopy)分析二个样品均未发现磷的高能峰。改进质量分析器控制设定数值的解决方案经生产验证有效,无需Frederic Sahores(2002 IEEE)的如增加清洗频率或分离子源专用注入机等高成本方案,提高了效益与产品良率。 展开更多
关键词 离子注入 磷杂质污染 有效控制
下载PDF
硅中磷杂质的SIMS定量检测 被引量:3
4
作者 陈密惠 何秀坤 +1 位作者 马农农 曹全喜 《电子科技》 2010年第9期68-70,共3页
利用SIMS(二次离子质谱仪)测试了国产重掺砷硅单晶中的痕量杂质磷,通过样品前期处理和精密的仪器调试,使检测时间缩短,并使硅中磷的检测限达到5×1013cm-3。实验结果表明,样品的前期处理工艺会对检测结果产生影响。不同处理工艺得... 利用SIMS(二次离子质谱仪)测试了国产重掺砷硅单晶中的痕量杂质磷,通过样品前期处理和精密的仪器调试,使检测时间缩短,并使硅中磷的检测限达到5×1013cm-3。实验结果表明,样品的前期处理工艺会对检测结果产生影响。不同处理工艺得到的样品,在表面粗糙度方面产生区别。不同的表面粗糙度,影响到样品的测试时间和测试精度。同时,通过仪器调试,仪器的真空度达到1×10-10torr,使测试背底和检测限降低。 展开更多
关键词 SIMS 重掺砷硅 磷杂质 前期处理
下载PDF
磷杂质分布优化方法的研究
5
作者 董鹏 屈小勇 +1 位作者 张治 宋志成 《太阳能》 2014年第3期31-33,共3页
以优化磷在硅中杂质分布的工艺方案为研究对象,通过扩散机理分析和实验研究的方法,对影响磷杂质分布型的关键因子进行理论探讨与实验验证。研究结果表明:硅中电子浓度与荷电空位是影响磷杂质分布的主要因子,通过扩散工艺调节实现了低表... 以优化磷在硅中杂质分布的工艺方案为研究对象,通过扩散机理分析和实验研究的方法,对影响磷杂质分布型的关键因子进行理论探讨与实验验证。研究结果表明:硅中电子浓度与荷电空位是影响磷杂质分布的主要因子,通过扩散工艺调节实现了低表面浓度、浅结的杂质分布,为提高晶硅电池的转化效率和批量生产提供了可能。 展开更多
关键词 晶硅电池 磷杂质 扩散 杂质浓度分布 发射极
下载PDF
高纯三氯氢硅生产中磷硼杂质的去除 被引量:7
6
作者 黄小明 杨邦美 《化工生产与技术》 CAS 2012年第5期55-56,64,共3页
根据生产实践,总结分析了磷、硼杂质在三氯氢硅中的存在形式以及磷硼元素对多晶硅品质的影响。磷系化合物主要是以高沸物存在,少量以低沸物存在,通过加大各塔塔底的排放可以除去;硼系化合物80%左右是以高沸形式存在,15%左右是以低沸形... 根据生产实践,总结分析了磷、硼杂质在三氯氢硅中的存在形式以及磷硼元素对多晶硅品质的影响。磷系化合物主要是以高沸物存在,少量以低沸物存在,通过加大各塔塔底的排放可以除去;硼系化合物80%左右是以高沸形式存在,15%左右是以低沸形式存在,还有5%左右的杂质沸点是同一工况下高于三氯氢硅,但低于四氯化硅的沸点。除硼成了三氯氢硅提纯的关键因素,合理控制各塔的排高排低除去硼杂质,降低精馏塔单位产品能耗,提高精馏塔的生产能力。 展开更多
关键词 三氯氢硅 杂质 高沸物 低沸物 多晶硅
下载PDF
探究吸附装置安装位置对多晶硅除硼磷的影响 被引量:2
7
作者 贺玉刚 王芳 +3 位作者 孙强 张晓伟 时庆合 付强 《无机盐工业》 CAS CSCD 北大核心 2020年第3期72-74,共3页
多晶硅生产中最难去除的杂质是硼、磷。为提高吸附装置对硼、磷杂质的吸附效果,降低多晶硅原料氯硅烷中的杂质含量,提升多晶硅的品质,对吸附装置在提纯系统中安装位置的合理性进行了分析研究。对提纯系统中部分物料输送管道进行改造,使... 多晶硅生产中最难去除的杂质是硼、磷。为提高吸附装置对硼、磷杂质的吸附效果,降低多晶硅原料氯硅烷中的杂质含量,提升多晶硅的品质,对吸附装置在提纯系统中安装位置的合理性进行了分析研究。对提纯系统中部分物料输送管道进行改造,使不同组分的物料进入相同结构的吸附装置进行吸附。调试吸附装置处于最佳工作状态后,对吸附后物料中硼、磷杂质含量的总和、吸附率以及吸附装置反冲洗频率进行对比分析。实验结果表明,当吸附装置安装在回收塔产品进入精馏塔的中间管道处时,吸附装置对硼、磷杂质的吸附效果最佳,且系统运行稳定。吸附装置在提纯系统中最佳安装位置的确定,提高了吸附装置对硼、磷杂质的吸附效果以及系统运行的稳定性,为多晶硅品质的提升奠定了基础。 展开更多
关键词 多晶硅 氯硅烷 硼、磷杂质 吸附 稳定性
下载PDF
PVC生产中硫磷沉积的危害及预防措施
8
作者 魏兴 《中国氯碱》 CAS 2020年第8期7-9,共3页
对PVC生产原料电石中的硫、磷杂质的危害性进行了分析,针对残留硫、磷在系统的沉积现象,指出了处理过程中造成其残留的薄弱环节,结合实际生产制定了相应的预防措施,从根本上消除了安全隐患。
关键词 电石 乙炔气 磷杂质 沉积 预防措施
下载PDF
Construction of Ag_3PO_4/Ag_2MoO_4 Z-scheme heterogeneous photocatalyst for the remediation of organic pollutants 被引量:8
9
作者 唐华 付彦惠 +2 位作者 苌树方 谢思雨 唐国刚 《Chinese Journal of Catalysis》 SCIE EI CAS CSCD 北大核心 2017年第2期337-347,共11页
Hole/electron separation and charge transfer are the key processes for enhancing the visible-light photocatalysis performance of heterogeneous photocatalytic systems.To better utilize and understand these effects,bina... Hole/electron separation and charge transfer are the key processes for enhancing the visible-light photocatalysis performance of heterogeneous photocatalytic systems.To better utilize and understand these effects,binary Ag3PO4/Ag2MoO4 hybrid materials were fabricated by a facile solution-phase reaction and characterized systematically by X-ray diffraction(XRD),energy-dispersive spectroscopy,Fourier transform infrared spectroscopy,Raman spectroscopy,field-emission scanning electron microscopy and ultraviolet-visible diffuse-reflectance spectroscopy.Under visible-light illumination,a heterogeneous Ag3PO4/Ag/Ag2MoO4 photocatalyst was constructed and demonstrated enhanced photocatalytic activity and photostability compared with pristine Ag3PO4toward the remediation of the organic dye rhodamine B.The Ag3PO4/Ag2MoO4 hybrid catalyst with8%mole fraction of Ag2MoO4 exhibited the highest photocatalytic activity toward the removal of typical dye molecules,including methyl orange,methylene blue and phenol aqueous solution.Moreover,the mechanism of the photocatalytic enhancement was investigated via hole- and radical-trapping experiments,photocurrent measurements,electrochemical impedance spectroscopy and XRD measurements.The XRD analysis revealed that metallic Ag nanoparticles formed initially on the surface of the Ag3PO4/Ag2MoO4 composites under visible-light illumination,leading to the generation of a Ag3PO4/Ag/Ag2MoO4 Z-scheme tandem photocatalytic system.The enhanced photocatalytic activity and stability were attributed to the formation of the Ag3PO4/Ag/Ag2MoO4Z-scheme heterojunction and surface plasmon resonance of photo-reduced Ag nanoparticles on the surface.Finally,a plasmonic Z-scheme photocatalytic mechanism was proposed.This work may provide new insights into the design and preparation of advanced visible-light photocatalytic materials and facilitate their practical application in environmental issues. 展开更多
关键词 Z-scheme heterojunction Silver phosphate Hybrid material Charge transfer Photocatalysis
下载PDF
Precipitation and gettering behaviors of copper in multicrystalline silicon used for solar cells 被引量:3
10
作者 李晓强 杨德仁 +1 位作者 余学功 阙端麟 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2011年第3期691-696,共6页
The precipitation and gettering behaviors of copper (Cu) at different defective regions in multicrystalline silicon were investigated by combining scanning infrared microscopy, optical microscopy, inductively couple... The precipitation and gettering behaviors of copper (Cu) at different defective regions in multicrystalline silicon were investigated by combining scanning infrared microscopy, optical microscopy, inductively coupled plasma mass spectrometry and microwave photo-conductance decay. It is found that the behaviors of Cu precipitation are strongly dependent on the defect density. Most of the Cu contaminants tend to form precipitates homogeneously in the low density defect region, while they mostly segregate at the defects and form precipitates heterogeneously in the high density defect region. In the case of heavy contamination, the Cu precipitate can significantly reduce the carrier lifetime of multicrystalline silicon due to their Schottkydiode behavior in the silicon substrate. A 900 °C rap thermal process (RTP) phosphorus gettering anneal cannot be sufficiently effective to remove the Cu precipitates in these two regions. 展开更多
关键词 multicrystalline silicon Cu precipitate phosphorus gettering DEFECTS carrier lifetime
下载PDF
Performance of an InP DHBT Grown by MBE 被引量:1
11
作者 苏树兵 刘新宇 +4 位作者 徐安怀 于进勇 齐鸣 刘训春 王润梅 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第5期792-795,共4页
We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor (DHBT) produced in China. The device has a 2μm × 12μm U-shaped emitter area and demonstrates a peak comm... We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor (DHBT) produced in China. The device has a 2μm × 12μm U-shaped emitter area and demonstrates a peak common-emitter DC current gain of over 300,an offset voltage of 0. 16V,a knee voltage of 0.6V,and an open-base breakdown voltage of about 6V. The HBT exhibits good microwave performance with a current gain cutoff fre- quency of 80GHz and a maximum oscillation frequency of 40GHz. These results indicate that this InP/InGaAs DHBT is suitable for low-voltage, low-power, and high-frequency applications. 展开更多
关键词 MBE Be-doped InGaAs base INP double heterojunction bipolar transistor
下载PDF
Removal of phosphorus from iron ores by chemical leaching 被引量:15
12
作者 金勇士 姜涛 +3 位作者 杨永斌 李骞 李光辉 郭宇峰 《Journal of Central South University of Technology》 EI 2006年第6期673-677,共5页
Alkali-leaching and acid-leaching were proposed for the dephosphorization of Changde iron ore, which contains an average of 1.12% for phosphorus content. Sodium hydroxide, sulfuriced, hydrochloric and nitric acids wer... Alkali-leaching and acid-leaching were proposed for the dephosphorization of Changde iron ore, which contains an average of 1.12% for phosphorus content. Sodium hydroxide, sulfuriced, hydrochloric and nitric acids were used for the preparation of leach solutions. The results show that phosphorus occurring as apatite phase could be removed by alkali-leaching, but those occurring in the iron phase could not. Sulfuric acid is the most effective among the three kinds of acid. 91.61% phosphorus removal was attained with 1% sulfuric acid after leaching for 20 rain at room temperature. Iron loss during acid-leaching can be negligible, which was less than 0.25%.The pH value of solution after leaching with1% sulfuric acid was about 0.86, which means acid would not be exhausted during the process and it could be recycled, and the recycle of sulfuric acid solution would make the dephosphorization process more economical. 展开更多
关键词 iron ore DEPHOSPHORIZATION acid-leaching alkali-leaching
下载PDF
Effect of Temperature on Segregation Coefficients of Impurities in Phosphorus 被引量:1
13
作者 刘雪峰 李军 +2 位作者 罗建洪 周堃 杨兆鹏 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2014年第3期294-298,共5页
The present work is focused on the relationship between effective segregation coefficient keff and tem- perature of melting zone for purification of phosphorus by zone melting method. Values of keff at four temperatur... The present work is focused on the relationship between effective segregation coefficient keff and tem- perature of melting zone for purification of phosphorus by zone melting method. Values of keff at four temperatures of melting zone are obtained for zone pass n = 1 at travel velocity of molten zone v = 5x 10^-3 m. h^-1 and initial impu- rity concentration C0〈10 μg.g-1, lnkeff is a linear function of 1/T. The keff values of A1, Ca, Cr, Fe, Cd and Sb in- crease with temperatures while that of Mg is almost constant. The purification is acceptable at lower temperature of melting zone such as 323 K. The variations of enthalpy and entropy between impurities and phosphorus in the liq- uid and solid ohases are also 19resented. 展开更多
关键词 PHOSPHORUS PURITY TEMPERATURE effective segregation coefficient zone melting
下载PDF
A Hybrid Membrane of Poly(vinyl alcohol) and Phosphotungstic Acid for Fuel Cells 被引量:10
14
作者 李磊 王宇新 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2002年第5期614-617,共4页
Proton conducting membranes composed of phosphotungstic acid (PWA) and poly(vinyl alcohol) (PVA)were prepared. Conductivity and Fourier transform infrared spectrometer(FTIR) measurements show that most ofthe acid embe... Proton conducting membranes composed of phosphotungstic acid (PWA) and poly(vinyl alcohol) (PVA)were prepared. Conductivity and Fourier transform infrared spectrometer(FTIR) measurements show that most ofthe acid embedded are stable in the PVA matrix when the membrane is immerged in water or methanol solution atroom temperature. Conductivity of the composite membranes scatters around 10-3 S.cm-1 at room temperature.The methanol crossover through the membranes is about an order of magnitude lower than that through Nafion117 membrane. 展开更多
关键词 fuel cell proton conductor composite membrane poly(vinyl alcohol) phosphotungstic acid
下载PDF
Determination of Equilibrium Distribution Coefficients of Impurities in Phosphorus by Vertical Zone-melting Technique 被引量:4
15
作者 任永胜 李军 段潇潇 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2011年第2期223-226,共4页
The equilibrium distribution coefficients of 12 impurities (As,Fe,Ca,Co,Al,Cr,Cu,Mg,Mn,Ni,Pb,Zn) in phosphorus were obtained by measuring their effective distribution coefficients at zone travel rate of 3,5,10,15,an... The equilibrium distribution coefficients of 12 impurities (As,Fe,Ca,Co,Al,Cr,Cu,Mg,Mn,Ni,Pb,Zn) in phosphorus were obtained by measuring their effective distribution coefficients at zone travel rate of 3,5,10,15,and 20 mm·h-1 in the purification process with vertical zone-melting technique.The results indicate that the method is reliable.The equilibrium distribution coefficients are below 0.3 except arsenic. 展开更多
关键词 equilibrium distribution coefficient PHOSPHORUS zone-melting PURIFICATION
下载PDF
Relative floatability as a criterion for evaluating the separation performance of phosphate from iron 被引量:1
16
作者 Azizi Asghar Seyyed Alizade Ganji Seyyed Mohammad 《International Journal of Mining Science and Technology》 SCIE EI CSCD 2017年第3期451-458,共8页
This work was aimed to study the relative floatability of phosphate flotation by means of kinetic analysis.The relative floatability is important to determine how selectively the phosphate is separated from its impuri... This work was aimed to study the relative floatability of phosphate flotation by means of kinetic analysis.The relative floatability is important to determine how selectively the phosphate is separated from its impurities. The effects of pulp pH, solid content, reagents dosage(depressant, collector and co-collector) and conditioning time were investigated on the ratio of the modified rate constant of phosphate to the modified rate constant of iron(relative floatability). The results showed that a large dosage of depressant associated with a low value of collector resulted in a better relative floatability. Increasing the co-collector dosage, conditioning time and pH increased the relative floatability up to a certain value and thereafter resulted in diminishing the relative floatability. Meanwhile, the results indicated that increment of solid concentration increased the relative floatability in range investigated. It was also found that that maximum relative floatability(16.05) could be obtained in pulp pH, 9.32, solid percentage, 30,depressant dosage, 440 g/t, collector dosage, 560 g/t, co-collector dosage, 84.63 g/t and conditioning time,9.43 min. 展开更多
关键词 Phosphate Relative floatability Kinetics Rate constant Separation
下载PDF
硅中磷塞曼杂化态的波函数混和与组成 被引量:2
17
作者 沈学础 朱景兵 +1 位作者 穆耀明 刘普林 《物理学报》 SCIE EI CAS CSCD 北大核心 1994年第9期1544-1552,共9页
报道了硅中磷塞曼(Zeeman)杂化态的波函数混和与组成的直接实验观测结果和理论讨论,用高灵敏度、高分辨率光热电离谱方法定量测量了高纯硅中孤立磷杂质“反相交”(anti-crossing)塞曼跃迁附近跃迁强度的系统演... 报道了硅中磷塞曼(Zeeman)杂化态的波函数混和与组成的直接实验观测结果和理论讨论,用高灵敏度、高分辨率光热电离谱方法定量测量了高纯硅中孤立磷杂质“反相交”(anti-crossing)塞曼跃迁附近跃迁强度的系统演变,由此导出杂化的束缚杂质电子塞曼能态的波函数组成。用有效质量模型框架下的变分方法计算和讨论了杂化态的波函数组成及相应的跃迁强度,并与实验结果相比较。 展开更多
关键词 磷杂质 杂化态 波函数
原文传递
Structural evolution and electronic properties of phosphorus-doped hydrogenated amorphous silicon thin films deposited by PECVD
18
作者 HE Jian LI Wei +2 位作者 XU Rui QI KangCheng JIANG YaDong 《Science China(Technological Sciences)》 SCIE EI CAS 2013年第1期103-108,共6页
The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon(a-Si:H) thin films was investigated.Samples with different features were prepared by plasma enhanced chem... The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon(a-Si:H) thin films was investigated.Samples with different features were prepared by plasma enhanced chemical vapor deposition(PECVD) at various substrate temperatures.Raman spectroscopy and Fourier transform infrared(FTIR) spectroscopy were used to evaluate the structural evolution,meanwhile,electronic-spin resonance(ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin films.The results revealed that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant. 展开更多
关键词 a-Si:H PECVD RAMAN FTIR ESR
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部