This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output p...This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.展开更多
Polyparaphenylene(PPP) is prepared by AlCl 3-CuCl 2 catalysts with benzene as the monomer and is doped by chemical method and N + ion implantation. The influences of the concentration, temperature and time of chemi...Polyparaphenylene(PPP) is prepared by AlCl 3-CuCl 2 catalysts with benzene as the monomer and is doped by chemical method and N + ion implantation. The influences of the concentration, temperature and time of chemical doping and the dose, energy and temperature of ion implantation, on PPP conductivity are investigated. The results showed that the conductivity of PPP can be improved 4～5 orders of magnitude by ion implantation and the conductivity of PPP can reach about 0.11 S·cm -1 by chemical doping. The comparison of stability of the material conductive behavior by using the two doping methods is presented. It shows that ion implantation is better than chemical doping in stabilizing the electric conductive behavior for the material.展开更多
The photo-corrosion of electrodeposited polycrystalline CdSe electrode was inhibited effectively by coating a thin layer of the conductive polyaniline （PAN） film. The relation between the performance and internal ba...The photo-corrosion of electrodeposited polycrystalline CdSe electrode was inhibited effectively by coating a thin layer of the conductive polyaniline （PAN） film. The relation between the performance and internal band structure of such film-covered PAN/CdSe electrode was studied by the electrochemical modulation reflectance spectrum （EMRS）. EMRS of both CdSe and PAN/CdSe electrodes in K4Fe（CN）6/K3Fe（CN）6 solution exhibited typical France-Keidysh oscillations, by which the values of the energy gap and flat band potential were determined. The EMRS results indicated that the energy band structure of CdSe electrode was not changed after coated with PAN film, so that the photoelectrochemical characteristic of PAN/CdSe electrode was rather similar to that of CdSe electrode.展开更多
The pattern of ITO transparent electrode of pixel cells in TFT-AMLCD is a critical step in the manufacturing process of flat panel display devices,the development of suitable plasma reactive ion etching is necessary t...The pattern of ITO transparent electrode of pixel cells in TFT-AMLCD is a critical step in the manufacturing process of flat panel display devices,the development of suitable plasma reactive ion etching is necessary to achieve high resolution display.In this work we investigated the Ar/CF 4 plasma etching of ITO as function of different parameters.We demonstrated the ability of this plasma to etch ITO and achieved an etching rate of about 3.73 nm/min,which is expected to increase for long pumping down period,and also through addition of hydrogen in the plasma.Furthermore we described the ITO etching mechanism in Ar/CF 4 plasma.The investigation of selectivity showed to be very low over silicon nitride and silicon dioxide but very high over aluminum.展开更多
Some new results of implant disordering on InP based MQW structures by implanted compositional disordering are presented. The energy shift of PL peak depends on ion species, ion dose, annealing conditions and target t...Some new results of implant disordering on InP based MQW structures by implanted compositional disordering are presented. The energy shift of PL peak depends on ion species, ion dose, annealing conditions and target temperature. The results indicate that the nonactive ions such as F+ and Ne+ are the best candidates for IICD, the ion dose which caused biggest blue shift is around 1 × 10 14 cm-2 for room temperature implantation and 5 × 10 14 cm-2 for an elevated implanted temperature of 200 ℃ and the optimum annealing condition is approximately 750 ℃ for 30 s. AES and TEM characterization suggests that ion bombardment by nonelectrically active ions such as F+, Ne+ induced same amount of layer interdiffusion which results in the band gap blue shift due to the compositional changes.展开更多
The transmission properties of terahertz （THz） wave passing through semiconductor aperture have been investigated. The dispersion relationship for surface plasmon polariton （SPP） at different temperatures has been...The transmission properties of terahertz （THz） wave passing through semiconductor aperture have been investigated. The dispersion relationship for surface plasmon polariton （SPP） at different temperatures has been numerically calculated. The results show that the dispersion relationship increases with the increasing of frequency and the decreasing of temperature, the thickness of slab has to be taken into consideration because of the large skin depth for semiconductor slab. In addition, the propagation constant increases with the increasing of frequency and the decreasing of temperature.展开更多
The interaction of the heavy charged particles, of energy higher than a few MeV/amu with semiconductor single crystals can lead to the structural modification of their physical properties and participate at the creati...The interaction of the heavy charged particles, of energy higher than a few MeV/amu with semiconductor single crystals can lead to the structural modification of their physical properties and participate at the creation of the defects which are called latent tracks. Several models were tested for explaining the track formation in semiconductors irradiated with swift heavy ions, one of them is the thermal spike model. This work shows that the experimental data obtained in semiconductors, in our case in InP irradiated with swift heavy ions can be described on the basis of the thermal spike model. The experimental results obtained on InP have allowed the parameters of this model to be understood. The only free parameter is the electron-phonon coupling constant g which is unknown in InP This model allows the evolution of track radii to be found as a function of electronic stopping power （dE/dx）e for different beam energies. For InP a good agreement is observed between calculated track radii and experimental ones on one hand, and on the other hand between calculated and experimental threshold value of electronic stopping power. This allows determining the electron-phonon coupling value for InP to be equal 0.9 × 10%11 Wcm-3K-land the （dE/dx）e threshold for latent track formation in InP equal 27 ＋ 3 keV/nm for ion energies ranging from 0.4-10 MeV/amu.展开更多
Room-temperature ferromagnetism is observed in the O^(+)-implanted AIN films with O+doses of 5×10^(16) cm^(-2)(AIN:Osxion)and 2×10^(17) cm^(-2)(AIN:O_(2x1on)).The observed magnetic anisotropy indicates that ...Room-temperature ferromagnetism is observed in the O^(+)-implanted AIN films with O+doses of 5×10^(16) cm^(-2)(AIN:Osxion)and 2×10^(17) cm^(-2)(AIN:O_(2x1on)).The observed magnetic anisotropy indicates that the ferromagnetism is attributed to the intrinsic properties of O^(+) -implanted AIN films.The out-of-plane saturation magnetization(Ms)of the AIN:O5×10^(16) is about 0.68 emu/g,much higher than that of AIN:O_(2x1017),0.09 emu/g,which is due to the excessively high O^(+)dose made more O+ions occupy adjacent A1^(3+)positions in forms of antiferromagnetic coupling.Doppler broadening of positron annihilation radiation measurements demonstrate the existence of Al vacancies in the O^(+)-implanted AIN films.The first-principles calculations suggest that the ferromagnetism originates mainly from the Al vacancies.Meanwhile,the formation of divacancies or vacancy clusters by high concentrations of Al vacancies will lead to the transformation of VA-VAi coupling from ferromagnetim to antiferromagnetism,ultimately weakening the ferromagnetism of the sample.展开更多
Utilization of visible light is of crucial importance for exploiting efficient semiconductor catalysts for solar water splitting. In this study, an advanced ion implantation method was utilized to dope Cu ions into Zn...Utilization of visible light is of crucial importance for exploiting efficient semiconductor catalysts for solar water splitting. In this study, an advanced ion implantation method was utilized to dope Cu ions into ZnO nanorod arrays for photoelectrochemical water splitting in visible light. X-ray diffraction （XRD） and X-ray photo-electron spectroscopy （XPS） results revealed that Cu^＋ together with a small amount of Cu^2＋ were highly dispersed within the ZnO nanorod arrays. The Cu ion doped ZnO nanorod arrays displayed extended optical absorption and enhanced photoelectrochemical performance under visible light illumination （A 〉 420 nm）. A considerable photocurrent density of 18 μA/cm^2 at 0.8 V （vs. a saturated calomel electrode） was achieved, which was about 11 times higher than that of undoped ZnO nanorod arrays. This study proposes that ion implantation could be an effective approach for developing novel visible-light-driven photocatalytic materials for water splitting.展开更多
Linearly bonded triiodide chains with fairly small distance between the adjacent iodine ions feature a facile electron transfer and highly anisotropic properties.Here,we demonstrate a novel strategy towards a new one-...Linearly bonded triiodide chains with fairly small distance between the adjacent iodine ions feature a facile electron transfer and highly anisotropic properties.Here,we demonstrate a novel strategy towards a new one-dimensional linear triiodide DMEDA·I6,using chain-type N,N'-dimethylethanediamine(DMEDA)cation to coordinate triiodine ions.This triiodide has the shortest distance between adjacent I3^- and good linearity.An estimated electronic band gap of1.36 e V indicates its semiconducting properties.100 fold differences both in polarization-sensitive absorption and effective mass were achieved by simulation,with directions parallel and perpendicular to the a-axis of DMEDA·I6.The DMEDA·I6 single crystal-based photodetectors show a good switching characteristic and a distinct polarization-sensitive photoresponse with linear dichroic photodetection ratio of about 1.9.Strongly anisotropic features and semiconducting properties of DMEDA·I6 make this triiodide system an interesting candidate for polarization related applications.展开更多
Water-dispersed CdSe/Bi2Se3 core/shell QDs with a photothermal conversion coefficient of 27.09% have been synthesized by a cation exchange reaction. The microstructure and crystal structure of the QDs, which were conf...Water-dispersed CdSe/Bi2Se3 core/shell QDs with a photothermal conversion coefficient of 27.09% have been synthesized by a cation exchange reaction. The microstructure and crystal structure of the QDs, which were confirmed by TEM and XRD, showed that partial cation exchange occurred inside the CdSe QDs. Two main mechanisms are responsible for the excellent photothermal conversion： inhibition of radiative recombination of carriers due to the formation of type-II semiconductor heterostructures, and the large surface-to-volume ratio of the QDs. Photothermal conversion experiments indicated that the CdSe/Bi2Se3 QDs showed high photothermal conversion efficiency and excellent NIR photostability.展开更多
基金the National Natural Science Foundation of China(Nos.90401025,60736036,60706009,60777021)the State Key Development Program for Basic Research of China(Nos.2006CB604901,2006CB604902)the National High Technology Research and Development Program of China(Nos.2006AA01Z256,2007AA03Z419,2007AA03Z417)~~
文摘This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.
基金supported by the National Natural Science Foundation of China(21773216,51173170,21571157)the Innovation Talents Award of Henan Province,China(114200510019)~~
文摘Polyparaphenylene(PPP) is prepared by AlCl 3-CuCl 2 catalysts with benzene as the monomer and is doped by chemical method and N + ion implantation. The influences of the concentration, temperature and time of chemical doping and the dose, energy and temperature of ion implantation, on PPP conductivity are investigated. The results showed that the conductivity of PPP can be improved 4～5 orders of magnitude by ion implantation and the conductivity of PPP can reach about 0.11 S·cm -1 by chemical doping. The comparison of stability of the material conductive behavior by using the two doping methods is presented. It shows that ion implantation is better than chemical doping in stabilizing the electric conductive behavior for the material.
文摘The photo-corrosion of electrodeposited polycrystalline CdSe electrode was inhibited effectively by coating a thin layer of the conductive polyaniline （PAN） film. The relation between the performance and internal band structure of such film-covered PAN/CdSe electrode was studied by the electrochemical modulation reflectance spectrum （EMRS）. EMRS of both CdSe and PAN/CdSe electrodes in K4Fe（CN）6/K3Fe（CN）6 solution exhibited typical France-Keidysh oscillations, by which the values of the energy gap and flat band potential were determined. The EMRS results indicated that the energy band structure of CdSe electrode was not changed after coated with PAN film, so that the photoelectrochemical characteristic of PAN/CdSe electrode was rather similar to that of CdSe electrode.
文摘The pattern of ITO transparent electrode of pixel cells in TFT-AMLCD is a critical step in the manufacturing process of flat panel display devices,the development of suitable plasma reactive ion etching is necessary to achieve high resolution display.In this work we investigated the Ar/CF 4 plasma etching of ITO as function of different parameters.We demonstrated the ability of this plasma to etch ITO and achieved an etching rate of about 3.73 nm/min,which is expected to increase for long pumping down period,and also through addition of hydrogen in the plasma.Furthermore we described the ITO etching mechanism in Ar/CF 4 plasma.The investigation of selectivity showed to be very low over silicon nitride and silicon dioxide but very high over aluminum.
文摘Some new results of implant disordering on InP based MQW structures by implanted compositional disordering are presented. The energy shift of PL peak depends on ion species, ion dose, annealing conditions and target temperature. The results indicate that the nonactive ions such as F+ and Ne+ are the best candidates for IICD, the ion dose which caused biggest blue shift is around 1 × 10 14 cm-2 for room temperature implantation and 5 × 10 14 cm-2 for an elevated implanted temperature of 200 ℃ and the optimum annealing condition is approximately 750 ℃ for 30 s. AES and TEM characterization suggests that ion bombardment by nonelectrically active ions such as F+, Ne+ induced same amount of layer interdiffusion which results in the band gap blue shift due to the compositional changes.
基金the National Fund for Distinguished Young Scholars of China under Grant No.60425415the Major Project of National Natural Science Foundation of China under Grant No 10390162the Shanghai Municipal Commission of Science and Technology
文摘The transmission properties of terahertz （THz） wave passing through semiconductor aperture have been investigated. The dispersion relationship for surface plasmon polariton （SPP） at different temperatures has been numerically calculated. The results show that the dispersion relationship increases with the increasing of frequency and the decreasing of temperature, the thickness of slab has to be taken into consideration because of the large skin depth for semiconductor slab. In addition, the propagation constant increases with the increasing of frequency and the decreasing of temperature.
文摘The interaction of the heavy charged particles, of energy higher than a few MeV/amu with semiconductor single crystals can lead to the structural modification of their physical properties and participate at the creation of the defects which are called latent tracks. Several models were tested for explaining the track formation in semiconductors irradiated with swift heavy ions, one of them is the thermal spike model. This work shows that the experimental data obtained in semiconductors, in our case in InP irradiated with swift heavy ions can be described on the basis of the thermal spike model. The experimental results obtained on InP have allowed the parameters of this model to be understood. The only free parameter is the electron-phonon coupling constant g which is unknown in InP This model allows the evolution of track radii to be found as a function of electronic stopping power （dE/dx）e for different beam energies. For InP a good agreement is observed between calculated track radii and experimental ones on one hand, and on the other hand between calculated and experimental threshold value of electronic stopping power. This allows determining the electron-phonon coupling value for InP to be equal 0.9 × 10%11 Wcm-3K-land the （dE/dx）e threshold for latent track formation in InP equal 27 ＋ 3 keV/nm for ion energies ranging from 0.4-10 MeV/amu.
文摘Room-temperature ferromagnetism is observed in the O^(+)-implanted AIN films with O+doses of 5×10^(16) cm^(-2)(AIN:Osxion)and 2×10^(17) cm^(-2)(AIN:O_(2x1on)).The observed magnetic anisotropy indicates that the ferromagnetism is attributed to the intrinsic properties of O^(+) -implanted AIN films.The out-of-plane saturation magnetization(Ms)of the AIN:O5×10^(16) is about 0.68 emu/g,much higher than that of AIN:O_(2x1017),0.09 emu/g,which is due to the excessively high O^(+)dose made more O+ions occupy adjacent A1^(3+)positions in forms of antiferromagnetic coupling.Doppler broadening of positron annihilation radiation measurements demonstrate the existence of Al vacancies in the O^(+)-implanted AIN films.The first-principles calculations suggest that the ferromagnetism originates mainly from the Al vacancies.Meanwhile,the formation of divacancies or vacancy clusters by high concentrations of Al vacancies will lead to the transformation of VA-VAi coupling from ferromagnetim to antiferromagnetism,ultimately weakening the ferromagnetism of the sample.
基金The authors gratefully acknowledge the financial support of the National Natural Science Foundation of China （Nos. 51102194, 51323011, and 51121092）, the Doctoral Program of the Ministry of Education （No. 20110201120040） and the Nano Research Program of Suzhou City （ZXG2013003）. S. Shen is supported by the Foundation for the Author of National Excellent Doctoral Dissertation of China （No. 201335） and the Fundamental Research Funds for the Central Universities.
文摘Utilization of visible light is of crucial importance for exploiting efficient semiconductor catalysts for solar water splitting. In this study, an advanced ion implantation method was utilized to dope Cu ions into ZnO nanorod arrays for photoelectrochemical water splitting in visible light. X-ray diffraction （XRD） and X-ray photo-electron spectroscopy （XPS） results revealed that Cu^＋ together with a small amount of Cu^2＋ were highly dispersed within the ZnO nanorod arrays. The Cu ion doped ZnO nanorod arrays displayed extended optical absorption and enhanced photoelectrochemical performance under visible light illumination （A 〉 420 nm）. A considerable photocurrent density of 18 μA/cm^2 at 0.8 V （vs. a saturated calomel electrode） was achieved, which was about 11 times higher than that of undoped ZnO nanorod arrays. This study proposes that ion implantation could be an effective approach for developing novel visible-light-driven photocatalytic materials for water splitting.
基金financially supported by the National Natural Science Foundation of China (51761145048, 61725401 and 61704097)the Innovation Fund of WNLO and the 62th China Postdoctoral Science Foundation (2017M622418)
文摘Linearly bonded triiodide chains with fairly small distance between the adjacent iodine ions feature a facile electron transfer and highly anisotropic properties.Here,we demonstrate a novel strategy towards a new one-dimensional linear triiodide DMEDA·I6,using chain-type N,N'-dimethylethanediamine(DMEDA)cation to coordinate triiodine ions.This triiodide has the shortest distance between adjacent I3^- and good linearity.An estimated electronic band gap of1.36 e V indicates its semiconducting properties.100 fold differences both in polarization-sensitive absorption and effective mass were achieved by simulation,with directions parallel and perpendicular to the a-axis of DMEDA·I6.The DMEDA·I6 single crystal-based photodetectors show a good switching characteristic and a distinct polarization-sensitive photoresponse with linear dichroic photodetection ratio of about 1.9.Strongly anisotropic features and semiconducting properties of DMEDA·I6 make this triiodide system an interesting candidate for polarization related applications.
基金This work has been partly supported by the National Basic Research Program of China （973 Program） No. 2011CB922204-2, and the National Natural Science Foundation of China （Nos. 11434010, 11147024, 11247025, 11304306, 11374002, and 61290303）.
文摘Water-dispersed CdSe/Bi2Se3 core/shell QDs with a photothermal conversion coefficient of 27.09% have been synthesized by a cation exchange reaction. The microstructure and crystal structure of the QDs, which were confirmed by TEM and XRD, showed that partial cation exchange occurred inside the CdSe QDs. Two main mechanisms are responsible for the excellent photothermal conversion： inhibition of radiative recombination of carriers due to the formation of type-II semiconductor heterostructures, and the large surface-to-volume ratio of the QDs. Photothermal conversion experiments indicated that the CdSe/Bi2Se3 QDs showed high photothermal conversion efficiency and excellent NIR photostability.
