InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation

A quantum well intermixing（QW1） investigation on double quantum well（DQW） structure with two different emitting wavelength caused by phosphorus ion implantation and following rapid thermal annealing （RTA） was carried out by means of photoluminescence（PL）. The ion implantation was performed at the energy of 120 keV with the dose ranging from 1 × 10^11cm^-2 to 1× 10^14cm^-2. The RTA was performed at the temperature of 700 ℃ for 30 s under pure nitrogen protection. The PL measurement implied that the band gap blue-shift from the upper well increases with the ion dose faster than that from lower well and the PL peaks from both QWs remained well separated under the lower dose implantation（-1 × 10^11cm^-2） indicating that the implant vacancy distribution affects the QWl. When the ion dose is over - 1 × 10^12cm^-2, the band gap blue-shift from both wells increases with the ion dose and finally the two peaks merge together as one peak indicating the ion implantation caused a total intermixing of both quantum wells.

Effect of Chemical Doping and Ion Implantation on Cond uctivity of Poly(p-phenylene vinylene) Derivatives

The surface conductivity of poly [ 2-methoxy-5-（3＇-methyl） butoxy]-p-phenylene vinylene （PMOMBOPV） films doped with FeCl3 and H2SO4 by chemical method and implanted by N^＋ ions was studied and the comparison of environmental stability of conductive behavior was also investigated. The energy and dose of N^＋ ions were in the rang 15～35 keV and 3. 8×10^15～9. 6×10^16 ions/cm^2, respectively. The conductivity of PMOMBOPV film was enhanced remarkably with the increases of the energy and dose of N^＋ ions. For example, the conductivity of PMOMBOPV film was 3. 2×10^-2S/cm when ion implantation was performed with an energy of 35 keV at a dose of 9. 6 × 10^14 ions/cm^2 , which was almost seven orders of magnitude higher than that of film unimplanted. The environmental stability of conductive behavior for ionimplanted film was much better than that of chemical doped films. Moreover, the conductive activation energy of ion-implanted films was measured to be about 0.17 eV.

Study of ion implanted Al_(0.25)Ga_(0.75)As/GaAs by Raman spectroscopy

This paper reported the effect of the weak damage in the Al0.25Ga0.75As/GaAs epitaxial layer induced by 0.8 MeV Si ions implantation with ion dose from 1×1014 to 5×1015 cm-2. The Raman spectra measured on these samples showed that there were two kinds of phonon modes existing in the epitaxial Al0.25Ga0.75As films. The strains induced in the implanted layer and the corresponding lattice parameters were also evaluated as a function of the implanted dose. In addition, the Rutherford backscattering spectrometry/channeling (RBS/C) was also measured on these samples. These two measurement techniques all confirmed that the implantation only induced weak damage in the material.

Optical waveguides in fluoride lead silicate glasses fabricated by carbon ion implantation

The carbon ion implantation with energy of 4.0 MeV and a dose of 4.0×10^(14) ions/cm^2 is employed for fabricating the optical waveguide in fluoride lead silicate glasses. The optical modes as well as the effective refractive indices are measured by the prism coupling method. The refractive index distribution in the fluoride lead silicate glass waveguide is simulated by the reflectivity calculation method(RCM). The light intensity profile and the energy losses are calculated by the finite-difference beam propagation method(FD-BPM) and the program of stopping and range of ions in matter(SRIM), respectively. The propagation properties indicate that the C^(2+) ion-implanted fluoride lead silicate glass waveguide is a candidate for fabricating optical devices.