We report room-temperature electroluminescence (EL) from as-deposited amorphous-Si/silicon oxynitride multilayer structure prepared by plasma enhanced chemical vapor deposition. We prepared 8-period a-Si/SiOxNy multil...We report room-temperature electroluminescence (EL) from as-deposited amorphous-Si/silicon oxynitride multilayer structure prepared by plasma enhanced chemical vapor deposition. We prepared 8-period a-Si/SiOxNy multilayer with thickness of 4 nm both for the Si and SiOxNy sublayers. The EL spectral profile exhibits some obviously modulated features upon the barrier material. By adjusting the nitride/oxygen ratio in the barrier layer, the EL peak position can be tuned from 750 nm to 695 nm. From the result of the Raman and Fourier transform infrared results, the EL is attributed to the radiative recombination of electrons and holes in luminescent centers related to the interface. The different interface characteristics induce the shift of EL peak position.展开更多
Stress controllable silicon nitride(Si Nx) films deposited by plasma enhanced chemical vapor deposition(PECVD) are reported. Low stress Si Nx films were deposited in both high frequency(HF) mode and dual frequency(HF/...Stress controllable silicon nitride(Si Nx) films deposited by plasma enhanced chemical vapor deposition(PECVD) are reported. Low stress Si Nx films were deposited in both high frequency(HF) mode and dual frequency(HF/LF) mode. By optimizing process parameters, stress free(-0.27 MPa) Si Nx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited Si Nx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit(IC), micro-electro-mechanical systems(MEMS) and bio-MEMS.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 60806046)the Foundation for Distinguished Young Talents in Higher Education of Guangdong (Grant Nos. LYM09101,LYM11090 and LYM10099)
文摘We report room-temperature electroluminescence (EL) from as-deposited amorphous-Si/silicon oxynitride multilayer structure prepared by plasma enhanced chemical vapor deposition. We prepared 8-period a-Si/SiOxNy multilayer with thickness of 4 nm both for the Si and SiOxNy sublayers. The EL spectral profile exhibits some obviously modulated features upon the barrier material. By adjusting the nitride/oxygen ratio in the barrier layer, the EL peak position can be tuned from 750 nm to 695 nm. From the result of the Raman and Fourier transform infrared results, the EL is attributed to the radiative recombination of electrons and holes in luminescent centers related to the interface. The different interface characteristics induce the shift of EL peak position.
基金supported by the National High Technology Research and Development Program of China(No.2015AA042603)the Fundamental Research Funds for the Central Universities of China(No.106112014CDJZR160001)
文摘Stress controllable silicon nitride(Si Nx) films deposited by plasma enhanced chemical vapor deposition(PECVD) are reported. Low stress Si Nx films were deposited in both high frequency(HF) mode and dual frequency(HF/LF) mode. By optimizing process parameters, stress free(-0.27 MPa) Si Nx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited Si Nx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit(IC), micro-electro-mechanical systems(MEMS) and bio-MEMS.
