利用金属蒸发真空弧(MEVVA)离子源引出的 Er 离子对单晶硅和单晶硅衬底上的 SiO2 膜进行了离子注入,用背散射方法分析了不同注入条件下 Er 原子浓度分布。实验结果表明,离子注入突破了平衡生长方法掺Er 硅溶解度的限制,实现了离子的高...利用金属蒸发真空弧(MEVVA)离子源引出的 Er 离子对单晶硅和单晶硅衬底上的 SiO2 膜进行了离子注入,用背散射方法分析了不同注入条件下 Er 原子浓度分布。实验结果表明,离子注入突破了平衡生长方法掺Er 硅溶解度的限制,实现了离子的高浓度掺杂。在硅和氧化硅中,最大 Er 体浓度分别达到 4.71×1021 cm–3 和7.67 ×1021 cm–3,远超过了常规方法所能得到的 Er 掺杂浓度。但是由于 Er 离子重,射程短而溅射效应强,因此限制了 Er 原子浓度的进一步提高。在注量相同时,随束流密度的增加,Er 外扩散效应增加。用快速退火热处理可消除部分辐射损伤,但是退火也引起了 Er 原子的外扩散。本文中给出了溅射和外扩散引起的 Er 原子丢失量与注入条件和退火条件的关系,给出了获得高浓度 Er 的途径。Er 注入单晶硅和热氧化硅,随注量的增加 Er 保留量逐渐达到饱和,饱和量接近 2×1017 cm–2,而丢失量增加。展开更多
A precise theoretical calculation off the pinch of voltage of the box-like ion implantation 4H-SiC MESFETs is investigated with the consideration of the effects of the ion-implanted channel and the depth of MESFETs ch...A precise theoretical calculation off the pinch of voltage of the box-like ion implantation 4H-SiC MESFETs is investigated with the consideration of the effects of the ion-implanted channel and the depth of MESFETs channel.The implant depth profile is simulated using the Monte Carlo simulator TRIM.The effects of parameters such as temperature,acceptor density,and activation rate on channel depth a,pinch off voltage are studied.展开更多
Neodymium is incorporated into single crystalline silicon on MEVVA (Metal Vapor Vacuum Arc) ion source.At room temperature,strong ultra violet and visible fluorescence are observed at the excitation wavelength of 220...Neodymium is incorporated into single crystalline silicon on MEVVA (Metal Vapor Vacuum Arc) ion source.At room temperature,strong ultra violet and visible fluorescence are observed at the excitation wavelength of 220nm.Luminescence intensity increases with the increase of ion fluence.XPS results manifest that Si-O,Nd-O,Si-Si and O-O bonds exist in the implanted layers.Luminescence mainly results from the radiation transition in the intra 4f shell of Nd 3+ ion.The defects' and damages' contribution to the luminescence is also presented.展开更多
The nitrogen ions implanted layer of p type 4H SiC epilayer is investigated.The fabrication processes and measurements of the implanted layer are given in details.The profile of implantation depth is simulated using...The nitrogen ions implanted layer of p type 4H SiC epilayer is investigated.The fabrication processes and measurements of the implanted layer are given in details.The profile of implantation depth is simulated using the Monte Carlo simulator TRIM.Lateral Schottky barrier diodes and transfer length method (TLM) measurement structure are made on nitrogen implanted layers for the testing.The concentration of activated donors N d is about 3 0×10 16 cm -3 .The resulting value for the activation rate in this study is 2 percent.The sheet resistance R sh is 30kΩ/□ and the resistivity ρ(R sh × d ) of the implanted layer is 0 72Ω·cm.The electron mobility calculated is about 300cm 2/(V·s) in the N implanted layer.展开更多
O433.4 2001031602椭偏光谱及在离子注入硅损伤研究中的应用=Spectroscopicellipsometry and its applications tostudy of radiation damage formed by ion implantationinto Si[刊,中]/阳生红,莫党(中山大学物理系.广东,广州(510275)...O433.4 2001031602椭偏光谱及在离子注入硅损伤研究中的应用=Spectroscopicellipsometry and its applications tostudy of radiation damage formed by ion implantationinto Si[刊,中]/阳生红,莫党(中山大学物理系.广东,广州(510275))∥半导体技术.-2000,25(5).-33-37介绍了椭圆偏振光谱的原理。展开更多
文摘利用金属蒸发真空弧(MEVVA)离子源引出的 Er 离子对单晶硅和单晶硅衬底上的 SiO2 膜进行了离子注入,用背散射方法分析了不同注入条件下 Er 原子浓度分布。实验结果表明,离子注入突破了平衡生长方法掺Er 硅溶解度的限制,实现了离子的高浓度掺杂。在硅和氧化硅中,最大 Er 体浓度分别达到 4.71×1021 cm–3 和7.67 ×1021 cm–3,远超过了常规方法所能得到的 Er 掺杂浓度。但是由于 Er 离子重,射程短而溅射效应强,因此限制了 Er 原子浓度的进一步提高。在注量相同时,随束流密度的增加,Er 外扩散效应增加。用快速退火热处理可消除部分辐射损伤,但是退火也引起了 Er 原子的外扩散。本文中给出了溅射和外扩散引起的 Er 原子丢失量与注入条件和退火条件的关系,给出了获得高浓度 Er 的途径。Er 注入单晶硅和热氧化硅,随注量的增加 Er 保留量逐渐达到饱和,饱和量接近 2×1017 cm–2,而丢失量增加。
文摘A precise theoretical calculation off the pinch of voltage of the box-like ion implantation 4H-SiC MESFETs is investigated with the consideration of the effects of the ion-implanted channel and the depth of MESFETs channel.The implant depth profile is simulated using the Monte Carlo simulator TRIM.The effects of parameters such as temperature,acceptor density,and activation rate on channel depth a,pinch off voltage are studied.
文摘Neodymium is incorporated into single crystalline silicon on MEVVA (Metal Vapor Vacuum Arc) ion source.At room temperature,strong ultra violet and visible fluorescence are observed at the excitation wavelength of 220nm.Luminescence intensity increases with the increase of ion fluence.XPS results manifest that Si-O,Nd-O,Si-Si and O-O bonds exist in the implanted layers.Luminescence mainly results from the radiation transition in the intra 4f shell of Nd 3+ ion.The defects' and damages' contribution to the luminescence is also presented.
文摘The nitrogen ions implanted layer of p type 4H SiC epilayer is investigated.The fabrication processes and measurements of the implanted layer are given in details.The profile of implantation depth is simulated using the Monte Carlo simulator TRIM.Lateral Schottky barrier diodes and transfer length method (TLM) measurement structure are made on nitrogen implanted layers for the testing.The concentration of activated donors N d is about 3 0×10 16 cm -3 .The resulting value for the activation rate in this study is 2 percent.The sheet resistance R sh is 30kΩ/□ and the resistivity ρ(R sh × d ) of the implanted layer is 0 72Ω·cm.The electron mobility calculated is about 300cm 2/(V·s) in the N implanted layer.
文摘O433.4 2001031602椭偏光谱及在离子注入硅损伤研究中的应用=Spectroscopicellipsometry and its applications tostudy of radiation damage formed by ion implantationinto Si[刊,中]/阳生红,莫党(中山大学物理系.广东,广州(510275))∥半导体技术.-2000,25(5).-33-37介绍了椭圆偏振光谱的原理。
