Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials

To improve the total-dose radiation hardness,silicon-on-insulator （SOI） wafers fabricated by the separation-by-implanted-oxygen （SIMOX） method are modified by Si ion implantation into the buried oxide with a post anneal. The ID- VG characteristics can be tested with the pseudo-MOSFET method before and after radiation. The results show that a proper Si-ion-implantation method can enhance the total-dose radiation tolerance of the materials.

高频互补双极工艺探析

本文对目前国内外制作高速集成运算放大器新采用的互补双极（ＣＢ）工艺作了一粗略分析。并结合作者在ＣＢ工艺方面的实验和国内当前工艺和设备水平，提出了两种在现有技术条件下可以实现的ＣＢ工艺。