氮离子注入对9Cr18Mo钢抗微动磨损性能的影响

作者对9Cr18Mo钢的氮离子注入试样及未注入试样进行了微动磨损的对比试验,利用扫描电子显微镜对磨损表面的形貌进行了观察,利用俄歇电子能谱仪和微区X-射线衍射仪对氮离子注入试样表面与磨损表面的元素分布及相组成进行了分析。结果表明,氮离子注入不仅能使材料的抗微动磨损性能明显提高,而且还可以使材料的微动磨损机制发生改变。作者认为,在氮离子注入层内形成了氮化物相,氮化物相的析出有助于改善9Cr18Mo钢的抗微动磨损性能。

Ti/4H-SiC Schottky Barrier Diodes with Field Plate and B^+ Implantation Edge Termination Technology

This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes （SBDs）. The ideality factor n = 1.08 and effective Schottky barrier heightφ= 1.05eV of the SBDs were measured with the method of forward current density-voltage （J-V）. A low reverse leakage current below 5.96 ×10^-3A/cm^2 at a bias voltage of - 1. 1kV was obtained. By using B^＋ implantation,an amorphous layer as the edge termination was formed. We used the PECVD SiO2 as the field plate dielectric. The SBDs have an on-state current density of 430A/cm^2 at a forward voltage drop of about 4V. The specific on-resistance Ro, was found to be 6. 77mΩ2 · cm^2 .

Biological Effects of Stevia rebaudianum Induced by Carbon Ion Implantation

The biological effects during seed germination were investigated after the dry seeds of Stevia rebaudianum Bertoni were implanted with carbon ion beam of 75 keV and 10 14 ions/cm 2. The results showed that the germination rate of carbon ion implanted seeds was slightly higher than that of the control, but the survival rate of the treated seedlings, on the contrary, was lower than that of the control (P<0.02), while the height of the treated seedlings was significantly higher than that of the control (P<0.01). On the 4th day after germination, the leaf cell wall in the treated group was thick, some high electron_dense substance deposited in the enlarged plasmodesma; Cell membrane creased with high electron_dense granules deposited on it. The plasma membrane protruded towards cell wall, and the granules shifted via plasmodesma or deposited onto cell wall. These phenomena may be related to the conveyance of implanted ions across cell wall, or be related to the accumulation of callose. In addition, the implantation of carbon ions could increase the lamellae of the chloroplast and cause high development of the chloroplast which sometimes contained two plastid centers in an individual chloroplast. Also, the highly developed cristae, abundant mitochondria and typical crystalloid structure in microbody could be found. All these results indicated that the anabolic and catabolic activities in the seedlings implanted with carbon ions before germination were obviously more active than those in the controls.

Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing

This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.

Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure

The reverse snapback phenomena （RSP） on I-V characteristics of static induction thyristors （SITH） are physically researched. The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to the conducting-state,when the anode voltage in the forward blocking-state is increased to a critical value. The RSP I-V characteristics of the power SITH are analyzed in terms of operating mechanism, double carrier injection effect, space charge effect, electron-hole plasma in the channel, and the variation in carrier lifetime. The reverse snapback mechanism is theoretically pro- posed and the mathematical expressions to calculate the voltage and current values at the snapback point are presented. The computing results are compared with the experiment values.

Evidence for Base Substitutions and Repair of DNA Mismatch Damage Induced by Low Energy N^+ Ion Beam Implantation in E. coli

Ever since the low energy N + ion beam has been accepted, the mutations of ionizing radiation are attributable mainly to avoidance of DNA damages repair. Evidences based on in vivo proof results are limited. Using the E.coli wild type and mutator strains, the mutant frequencies suggest that base substitutions in rpoB gene are induced by the N + implantation. A highly conserved region is selected to get the direct evidence for base substitutions by sequence of the high fidelity PCR amplification products in mutants. Most of the mutants (90.9%, 40/44) have at least one base substitution in the amplification region. The evidences for CG to TA (55%, 22/40), AT to GC (20%, 8/40) and TA to CG (5%, 2/40) transitions are identified. The transversions are AT to TA (15%, 6/40) and GC to CG (5%, 2/40). It is suggested that DNA cytosine methylase might play an important role in mismatch repair of DNA damage induced by N + implantation by analysis of the mutant frequencies of mutator strains.

10 W QCW operation of a proton implanted GaAlAs diode laser array

We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array.The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum(FWHM) of less than 3°,and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.

Implant Compositional Disordering on InGaAs/InP MQW Structures

Some new results of implant disordering on InP based MQW structures by implanted compositional disordering are presented. The energy shift of PL peak depends on ion species, ion dose, annealing conditions and target temperature. The results indicate that the nonactive ions such as F+ and Ne+ are the best candidates for IICD, the ion dose which caused biggest blue shift is around 1 × 10 14 cm-2 for room temperature implantation and 5 × 10 14 cm-2 for an elevated implanted temperature of 200 ℃ and the optimum annealing condition is approximately 750 ℃ for 30 s. AES and TEM characterization suggests that ion bombardment by nonelectrically active ions such as F+, Ne+ induced same amount of layer interdiffusion which results in the band gap blue shift due to the compositional changes.

Investigation of Edge Fluctuation Characteristics on the HL-2A Tokamak

The edge plasma fluctuation characteristics are studied by the fast reciprocating scanning 6-probes in the boundary region. These probes can measure edge plasma temperature, density, poloidal electric field, radial electric field, Reynolds stress, and their profiles in once discharges. Measurement results are used to analyze plasma confinement, turbulent fluctuations and their correlation characteristics during multi-shot pellet injection （MPI） , supersonic molecular beam injection （SMB1） and electron cyclotron resonant heating （ ECRH ） discharges.

Effects of ion chemistry and mass on the electrical properties of ion implanted pyrolyzed polyacrylonitrile

This paper describes the conductivity modifications induced by heavy ion implantation in pyrolysis products obtained by thermal treatment of polyacrylonitrile （PAN） thin films at temperatures of 435℃ （PAN435） and 750℃ （PAN750） under vacuum. Ionic species having different chemical reactivities such as Kr, As, Cl. and F ions were utilized to allow interpretation of the conductivity＇ data either in terms of implantation induced molecular rearrangements or in terms of specific chemical doping effects. The temperature dependence of conductivity in the range between 25-3000C followed nearly a simple activation conduction relationship from which the temperature coefficients of resistivity （ct） were determined. In this temperature range, PAN750 provided the smallest α value compared with ion implanted PAN750 or with products obtained at the lower pyrolysis temperature. However. the corresponding lowest rate of conductivity change with temperatures （0.49%/℃） obtained in this study far exceeds the specification value required for thin film resistor applications （〈 0.1%/℃）.

Effect of Defects on Magnetic Properties of O^(+) -implanted AlN Films by Positron Annihilation Spectroscopy

Room-temperature ferromagnetism is observed in the O^(+)-implanted AIN films with O+doses of 5×10^(16) cm^(-2)(AIN:Osxion)and 2×10^(17) cm^(-2)(AIN:O_(2x1on)).The observed magnetic anisotropy indicates that the ferromagnetism is attributed to the intrinsic properties of O^(+) -implanted AIN films.The out-of-plane saturation magnetization(Ms)of the AIN:O5×10^(16) is about 0.68 emu/g,much higher than that of AIN:O_(2x1017),0.09 emu/g,which is due to the excessively high O^(+)dose made more O+ions occupy adjacent A1^(3+)positions in forms of antiferromagnetic coupling.Doppler broadening of positron annihilation radiation measurements demonstrate the existence of Al vacancies in the O^(+)-implanted AIN films.The first-principles calculations suggest that the ferromagnetism originates mainly from the Al vacancies.Meanwhile,the formation of divacancies or vacancy clusters by high concentrations of Al vacancies will lead to the transformation of VA-VAi coupling from ferromagnetim to antiferromagnetism,ultimately weakening the ferromagnetism of the sample.

Ion Source for HL-2A Nuetral Beam Injection

An ion source for HL-2A Neutral Beam Injection(NBI)was operated successfully in March 2007,in South- western Institute of Physics.A bucket source type and three-grid-system are used in this new ion source design.The filament current of ll00A,filament voltage of 12V,arc current of 1050A,arc voltage of 120V,highest plasmas density of 2.5×10^(12)/cm^3,extracted ion beam density of 0.44A/cm^2,plasma density uniformity better than 5% in the area close to the first grid,duration of 2s,for this new source,have been achieved.The conceptual design,mechanical design and experiment result for the ion source are presented briefly in this paper.

Surface modification of indium tin oxide by oxygen plasma immersion ion implantation

Organic electroluminescent device,also known as organic light-emitting diode (OLED),is a kind of solid state light emitting device by carrier injection which can directly transform electrical energy into luminous energy.Due to its low operating voltage,low energy consumption,high brightness,flexibility in the choice of materials and easy realization of full color display,OLED is the potential material both in the display and illumination fields.However,there is much scope to improve the efficiency,lifetime,and reduce the cost in mass production before OLEDs can replace traditional technology in some application fields.In this work,we report the oxygen plasma immersion ion implantation (PIII) to improve the surface oxygen ratio of ITO films for further increase of surface work function above the common treatment of O2 inductively coupled plasma (ICP).The ratio of oxygen content at the surface layer was improved to be much higher than by O2 ICP treatment.A further surface work function relative increase of 0.4e V above OICP sample and 0.4 eV above the as-prepared sample can be estimated by the peak relative shift in the X-ray photoelectron spectroscopy (XPS) diagram.Moreover,the XPS characterization was carried out at least 50 h after the PIII implantation to indicate that the surface modifying effects are stable.The variations of transparency and conductivity of the PIII treated ITO samples can be neglected.

The effect of the boron-ions implantation on the performance of RADFETs

In this work, we studied on the boron-ions implantation, including the implant dose and post-annealing temperature on the performance of PMOS radiation field-effect transistors(RADFETs) in experimental. The possible traps and defects induced by ions implantation in the gate-oxide and their further impacting on the sensitivity and dose range of RADFETs were analyzed qualitatively. Our devices had the dry/wet/dry sandwich gate-oxide of 420 nm thick. Different ion-implanting doses and post-annealing temperatures were carried out during the RADFETs fabrication. We built a real time auto-measurement system to realize the auto-state-switch between irradiation and read-out modes, and in-situ measurement of output voltage for ten devices in turn at once of radiation experiment. The threshold voltage, dose range and sensitivity of RADFETs were extracted and analyzed in detail. The results showed that the highest sensitivity of 229 mV/Gy achieved when the implant dose was2.2×1011 cm.2 and the post-annealing temperature was 1000°C, and the dose range of 34 Gy as well.

Formaldehyde gas sensor based on TiO_2 thin membrane integrated with nano silicon structure

An innovative formaldehyde gas sensor based on thin membrane type metal oxide of Ti O2 layer was designed and fabricated. This sensor under ultraviolet(UV) light emitting diode(LED) illumination exhibits a higher response to formaldehyde than that without UV illumination at low temperature. The sensitivities of the sensor under steady working condition were calculated for different gas concentrations. The sensitivity to formaldehyde of 7.14 mg/m^3 is about 15.91 under UV illumination with response time of 580 s and recovery time of 500 s. The device was fabricated through micro-electro-mechanical system(MEMS) processing technology. First, plasma immersion ion implantation(PIII) was adopted to form black polysilicon, then a nanoscale TiO_2 membrane with thickness of 53 nm was deposited by DC reactive magnetron sputtering to obtain the sensing layer. By such fabrication approaches, the nanoscale polysilicon presents continuous rough surface with thickness of 50 nm, which could improve the porosity of the sensing membrane. The fabrication process can be mass-produced for the MEMS process compatibility.

Impact of photogenerated charge behaviors on luminescence of Eu^(3+) -incorporated microporous titanosilicate ETS-10

A series of Eu3+ -incorporated ETS-10 samples were successfully prepared based on the traditional ion exchange method. The relationship between photogenerated charge behaviors and luminescent properties has been investigated in detail. It has been demonstrated that as a result of the charge transfer from the titanate quantum wires to Eu3+ crystal field states, the host matrix ETS-10 functions as the sensitizer of Eu3+ to enhance the red luminescence, while Eu3+ cations contribute to the recombination of photogenerated charges. The behavior of photogenerated charges has significant impact on the luminescent properties of Eu3+ -incorporated ETS-10 materials.

Gold nanoparticles attached NH^(2+) ion implantation-modified indium tin oxide electrode:Characterization and electrochemical studies

An NH2+ ion implantation-modified indium tin oxide film was prepared and the implantation of amino groups on the indium tin oxide substrate was verified by X-ray photoelectron spectroscopy analysis.The gold nanoparticles attached surface could be obtained by self-assembly of different sized colloidal gold nanoparticles onto the NH2+ ion implantation-modified indium tin oxide surface.By scanning electron microscopy and electrochemical techniques,the as-prepared AuNPs attached NH2+ ion implantation-modified indium tin oxide electrode was characterized and compared with bare indium tin oxide electrode.Using a [Fe(CN)6]3 /[Fe(CN)6]4 redox probe,the increasingly facile heterogeneous electron transfer kinetics resulting from the attached gold nanoparticle arrays was observed.The gold nanoparticle arrays exhibited high catalytic activity toward the electro-oxidation of nitric oxide,which could provide electroanalytical application for nitric oxide sensing.

Effect of helium implantation on mechanical properties of niobium doped tungsten

Helium atoms were implanted into niobium-doped tungsten and pure tungsten via ion implantation, and the effect of helium implantation on mechanical properties of two types of sample was studied by X-ray photoelectron spectroscopy, scanning electron microscope and nano-hardness tester. The results clearly show that the surface hardness and elastic modulus of tungsten are improved by implanted niobium ions, and the degradation of mechanical properties is mitigated comparing to pure tungsten under identical helium implantation fluence. It can be concluded that the defects induced by niobium implantation improved the mechanical properties of tungsten by obstructing the slip of dislocation.

Viscosity and Jet Quenching from a Holographic Model

We consider the backreaction of the fundamental flavor degrees of freedom on the A dSs-Schwarz background, and calculate their contributions to the shear viscosity and jet-quenching parameter of the thermal quark-gluon plasma.