A new electron impact storage ion source has been designed for time of flight mass spectrometers with a high mass resolving power and high sensitivity. Because of the storage and compressing focus of the source, the o...A new electron impact storage ion source has been designed for time of flight mass spectrometers with a high mass resolving power and high sensitivity. Because of the storage and compressing focus of the source, the overall performance of the instrument has been improved greatly with a mass resolving power up to 3 500. The conditions of the second order of the focus are given and the storage ability is proved. The competer simulations and experiment results are given, too.展开更多
In field emission devices, the emission current sometimes degrades with the time. The mechanism of the current degradation is complicated. In this paper, a program is used to simulate the movement of the electron beam...In field emission devices, the emission current sometimes degrades with the time. The mechanism of the current degradation is complicated. In this paper, a program is used to simulate the movement of the electron beam from a field emitter. According to the current distribution and the trajectories of the primary electron beam, it is shown that the residual gas is ionized and the ion pairs are generated. The trajectories of the positive ions are simulated. With the different locations and kinetic energy of i...展开更多
The irradiation effects of Ar＋, He＋, and S＋ with energy from 10 eV to 180 eV on n-InP（100） surface are analyzed by X-ray photoelectron spectroscopy and low energy electron diffraction. After irradiation on the n-...The irradiation effects of Ar＋, He＋, and S＋ with energy from 10 eV to 180 eV on n-InP（100） surface are analyzed by X-ray photoelectron spectroscopy and low energy electron diffraction. After irradiation on the n-InP surface, damage on the surface, displacement of the Fermilevel and formation of sulfur species on S＋ exposed surface are found and studied. Successive annealing is done to suppress the surface states introduced by S＋ exposure. However, it is unsuccessful in removing the damage caused by noble ions. Besides, S＋ ions can efficiently repair the Ar＋ damaged surface, and finally form a fine 2×2 InP surface.展开更多
Applying negative bias voltages caused significant microstructure changes in arc ion plated CrN films. Nanocrystalline microstructures were obtained by adjusting the negative bias voltage. Structural characterizations...Applying negative bias voltages caused significant microstructure changes in arc ion plated CrN films. Nanocrystalline microstructures were obtained by adjusting the negative bias voltage. Structural characterizations of the films were carried out using X-ray diffractometry (XRD) and high-resolution transmission electron microscopy (HR-TEM). The results indicated that increasing ion bombardment by applying negative bias voltages resulted in the formation of defects in the CrN films, inducing microstructure evolution from micro-columnar to nanocrystalline. The microhardness and residual stresses of the films were also affected. Based on the experimental results, the evolution mechanisms of the film microstructure and properties were discussed by considering ion bombardment effects.展开更多
Cross sections for K-shell ionization have been measured at electron energies of 0.1-0.40 MeV for Cu and Sn, and of 0.30MeV for Ag. The present results have been compared with theoretical calculations and previously r...Cross sections for K-shell ionization have been measured at electron energies of 0.1-0.40 MeV for Cu and Sn, and of 0.30MeV for Ag. The present results have been compared with theoretical calculations and previously reported experimental values.展开更多
We present a computer simulation study on the influence of incident ions on the energy transferred to primary knock-on atoms(PKAs)and defects produced in the cascade collision of irons.Three types of ions(H,Fe,and Xe,...We present a computer simulation study on the influence of incident ions on the energy transferred to primary knock-on atoms(PKAs)and defects produced in the cascade collision of irons.Three types of ions(H,Fe,and Xe,which are frequently used in irradiation experiments)with an energy of 3 MeV were simulated.According to the calculation results of SRIM,the average energy transferred to PKAs by Fe ions was the highest among the three types.Then,cascade collisions induced by PKAs with different energies were simulated by the molecular dynamics method.The maximum number of defects produced during irra-diation increased,and the time taken by defect number peak formation was extended with the increased energy of PKAs.The difference in radial distribution function between pre-and post-irradiation irons showed that a higher energy of PKA transferred resulted in a flatter curve.Besides,the law of defects varying in temperature was also investigated.All the researches imply that heavy ions can substitute for neutrons in irradiation experiments which is a practicable way,but the influence of conditions must be taken into account.展开更多
Hydrogenated microcrystalline silicon （mc-Si：H） thin films were deposited by inductively coupled plasma assistant magnetron sputtering （ICP-MS） in an Ar-H2 gas mixture. The role of ion bombardment in the growth o...Hydrogenated microcrystalline silicon （mc-Si：H） thin films were deposited by inductively coupled plasma assistant magnetron sputtering （ICP-MS） in an Ar-H2 gas mixture. The role of ion bombardment in the growth of mc-Si：H films was studied with increasing negative bias voltages on the substrate holder from 0 to -100 V. Raman scattering, X-ray diffraction （XRD）, Fourier transform infrared （FTIR） spectroscopy and transmission electron microscopy （TEM） were performed to investigate the microstructure changes of deposited Si films. Raman scattering showed that the high energy ion bombardment resulted in crystalline degradation of Si films. The XRD results showed the decrease and even elimination of preferential growth orientation of crystalline Si films with ion bombardment energy increase. The SiH bonding configuration changes and the increase of bonded hydrogen concentration were determined with the analysis of FTIR spectra. Furthermore, the dramatic evolution of cross-sectional morphology of Si thin films was detected by TEM observation.展开更多
Metal-organic frameworks(MOFs)and mechanoluminescent(ML)materials have been considered as two types of promising materials that have their own application fields.It would be amazing to endow one material with the adva...Metal-organic frameworks(MOFs)and mechanoluminescent(ML)materials have been considered as two types of promising materials that have their own application fields.It would be amazing to endow one material with the advantages of ML and MOFs,thus broadening their applications.However,there are quite few investigations on this topic,and the ML mechanism in ML-MOFs remains unclear.In this study,we proposed a strategy for developing ML-MOFs by doping lanthanide ions into the non-centrosymmetric SBD([Sr(μ-BDC)(DMF)]∞)MOF,and successfully synthesized a series of lanthanide-doped MOFs Ln-SBD(Ln=Tb,Dy,Sm,Eu)and Tb1-xEux-SBD(x=0.2,0.4,0.6,0.8)with multicolor ML.The lanthanide ions were uniformly distributed in the matrix of the SBD-MOF,and occupied the Sr site.The MLMOFs exhibited intense multicolor ML emissions varying from green to yellow to red by changing the co-doping ratios and species of lanthanide ions.The similar ML and photoluminescence(PL)spectra indicated that the ML emission was assigned to the radiative transition from the excited states to the ground states of lanthanide ions.The radiative transition was induced by the electron bombardment process that originated from the piezoelectric effect of the non-centrosymmetric SBD host.In addition,a pioneering temperature sensing research based on ML was carried out,which is promising for realizing dual-functional detection of stress and temperature without excitation light sources.This study gives a unique insight for developing more versatile and interesting smart materials by combining the versatility of MOF with the ML emission,imparting additional values to both MOF and ML materials.Moreover,this study provides a general rule for selecting MOFs with an acentric structure as the host for ML materials.展开更多
文摘A new electron impact storage ion source has been designed for time of flight mass spectrometers with a high mass resolving power and high sensitivity. Because of the storage and compressing focus of the source, the overall performance of the instrument has been improved greatly with a mass resolving power up to 3 500. The conditions of the second order of the focus are given and the storage ability is proved. The competer simulations and experiment results are given, too.
文摘In field emission devices, the emission current sometimes degrades with the time. The mechanism of the current degradation is complicated. In this paper, a program is used to simulate the movement of the electron beam from a field emitter. According to the current distribution and the trajectories of the primary electron beam, it is shown that the residual gas is ionized and the ion pairs are generated. The trajectories of the positive ions are simulated. With the different locations and kinetic energy of i...
基金ACKNOWLEDGMENTS This work was supported by the National Natural Science Foundation of China （No.11275024） and the Ministry of Science and Technology of China （No.2013YQ03059503 and No.2011AA120101）. The authors would like to thank Prof. R. W. M. Kwok from the Chinese University of Hong Kong.
文摘The irradiation effects of Ar＋, He＋, and S＋ with energy from 10 eV to 180 eV on n-InP（100） surface are analyzed by X-ray photoelectron spectroscopy and low energy electron diffraction. After irradiation on the n-InP surface, damage on the surface, displacement of the Fermilevel and formation of sulfur species on S＋ exposed surface are found and studied. Successive annealing is done to suppress the surface states introduced by S＋ exposure. However, it is unsuccessful in removing the damage caused by noble ions. Besides, S＋ ions can efficiently repair the Ar＋ damaged surface, and finally form a fine 2×2 InP surface.
基金Project(2010-0001-226) supported by the National Core Research Center (NCRC) Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and TechnologyProject supported by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Korea
文摘Applying negative bias voltages caused significant microstructure changes in arc ion plated CrN films. Nanocrystalline microstructures were obtained by adjusting the negative bias voltage. Structural characterizations of the films were carried out using X-ray diffractometry (XRD) and high-resolution transmission electron microscopy (HR-TEM). The results indicated that increasing ion bombardment by applying negative bias voltages resulted in the formation of defects in the CrN films, inducing microstructure evolution from micro-columnar to nanocrystalline. The microhardness and residual stresses of the films were also affected. Based on the experimental results, the evolution mechanisms of the film microstructure and properties were discussed by considering ion bombardment effects.
文摘Cross sections for K-shell ionization have been measured at electron energies of 0.1-0.40 MeV for Cu and Sn, and of 0.30MeV for Ag. The present results have been compared with theoretical calculations and previously reported experimental values.
基金supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China(SRFDP)(Grant No.20133218110023)the Fundamental Research Funds for the Central Universities+1 种基金the Fundation of Graduate Innovation Center in NUAA(Grant No.kfjj20130217)the Funding of Jiangsu Innovation Program for Graduate Education and the Fundamental Research Funds for the Central Universities(Grant No.CXZZ13_0159)
文摘We present a computer simulation study on the influence of incident ions on the energy transferred to primary knock-on atoms(PKAs)and defects produced in the cascade collision of irons.Three types of ions(H,Fe,and Xe,which are frequently used in irradiation experiments)with an energy of 3 MeV were simulated.According to the calculation results of SRIM,the average energy transferred to PKAs by Fe ions was the highest among the three types.Then,cascade collisions induced by PKAs with different energies were simulated by the molecular dynamics method.The maximum number of defects produced during irra-diation increased,and the time taken by defect number peak formation was extended with the increased energy of PKAs.The difference in radial distribution function between pre-and post-irradiation irons showed that a higher energy of PKA transferred resulted in a flatter curve.Besides,the law of defects varying in temperature was also investigated.All the researches imply that heavy ions can substitute for neutrons in irradiation experiments which is a practicable way,but the influence of conditions must be taken into account.
基金supported by the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No.707015)the University Innovative Research Team Project of Liaoning Province,the National Natural Science Foundation of China (Grant Nos.11204024 and 11004021)the Fundamental Research Funds for the Central Universities (Grant Nos. DC12010208 and DC120101173)
文摘Hydrogenated microcrystalline silicon （mc-Si：H） thin films were deposited by inductively coupled plasma assistant magnetron sputtering （ICP-MS） in an Ar-H2 gas mixture. The role of ion bombardment in the growth of mc-Si：H films was studied with increasing negative bias voltages on the substrate holder from 0 to -100 V. Raman scattering, X-ray diffraction （XRD）, Fourier transform infrared （FTIR） spectroscopy and transmission electron microscopy （TEM） were performed to investigate the microstructure changes of deposited Si films. Raman scattering showed that the high energy ion bombardment resulted in crystalline degradation of Si films. The XRD results showed the decrease and even elimination of preferential growth orientation of crystalline Si films with ion bombardment energy increase. The SiH bonding configuration changes and the increase of bonded hydrogen concentration were determined with the analysis of FTIR spectra. Furthermore, the dramatic evolution of cross-sectional morphology of Si thin films was detected by TEM observation.
基金the National Natural Science Foundation of China(51832005)。
文摘Metal-organic frameworks(MOFs)and mechanoluminescent(ML)materials have been considered as two types of promising materials that have their own application fields.It would be amazing to endow one material with the advantages of ML and MOFs,thus broadening their applications.However,there are quite few investigations on this topic,and the ML mechanism in ML-MOFs remains unclear.In this study,we proposed a strategy for developing ML-MOFs by doping lanthanide ions into the non-centrosymmetric SBD([Sr(μ-BDC)(DMF)]∞)MOF,and successfully synthesized a series of lanthanide-doped MOFs Ln-SBD(Ln=Tb,Dy,Sm,Eu)and Tb1-xEux-SBD(x=0.2,0.4,0.6,0.8)with multicolor ML.The lanthanide ions were uniformly distributed in the matrix of the SBD-MOF,and occupied the Sr site.The MLMOFs exhibited intense multicolor ML emissions varying from green to yellow to red by changing the co-doping ratios and species of lanthanide ions.The similar ML and photoluminescence(PL)spectra indicated that the ML emission was assigned to the radiative transition from the excited states to the ground states of lanthanide ions.The radiative transition was induced by the electron bombardment process that originated from the piezoelectric effect of the non-centrosymmetric SBD host.In addition,a pioneering temperature sensing research based on ML was carried out,which is promising for realizing dual-functional detection of stress and temperature without excitation light sources.This study gives a unique insight for developing more versatile and interesting smart materials by combining the versatility of MOF with the ML emission,imparting additional values to both MOF and ML materials.Moreover,this study provides a general rule for selecting MOFs with an acentric structure as the host for ML materials.
