This paper introduces a high-revolution,200kHz signal bandwidth EA modulator for low-IF GSM receivers that adopts a 2-1 cascaded single-bit structure to achieve high linearity and stability. Our design is realized in ...This paper introduces a high-revolution,200kHz signal bandwidth EA modulator for low-IF GSM receivers that adopts a 2-1 cascaded single-bit structure to achieve high linearity and stability. Our design is realized in a standard 0.18μm CMOS process with art active area of 0.5mm× 1.1mm.The EA modulator is driven by a single 19.2MHz clock signal and dissipates 5.88mW from 3V power supply. The experimental results show that,with an oversampling ratio of 48, the modulator achieves a 84.4dB dynamic range,73.8dB peak SNDR, and 80dB peak SNR in the signal bandwidth of 200kHz.展开更多
文摘This paper introduces a high-revolution,200kHz signal bandwidth EA modulator for low-IF GSM receivers that adopts a 2-1 cascaded single-bit structure to achieve high linearity and stability. Our design is realized in a standard 0.18μm CMOS process with art active area of 0.5mm× 1.1mm.The EA modulator is driven by a single 19.2MHz clock signal and dissipates 5.88mW from 3V power supply. The experimental results show that,with an oversampling ratio of 48, the modulator achieves a 84.4dB dynamic range,73.8dB peak SNDR, and 80dB peak SNR in the signal bandwidth of 200kHz.
