Proposed herein is a novel non planar cell structure for flash memory which has been fabricated to achieve high programming speed with low operating voltage.This memory cell preserves a simple stacked gate structure ...Proposed herein is a novel non planar cell structure for flash memory which has been fabricated to achieve high programming speed with low operating voltage.This memory cell preserves a simple stacked gate structure which only requires an additional masking step to form the novel structure in the channel.For the cell of the 1 2μm gate length,the programming speed of 43μs under the measuring condition of V g=15V, V d=5V,and the erasing time of 24ms under V g=-5V, V s=8V are obtained.The programming speed is faster than that of the conventional planar cell structure.This superior programming speed makes it suitable for high speed application.展开更多
Step channel direct injection(SCDI)flash memory device which had been developed changes the hot carrier injection method by making a shallow step in the middle of channel .Therefore high speed for programming,hig...Step channel direct injection(SCDI)flash memory device which had been developed changes the hot carrier injection method by making a shallow step in the middle of channel .Therefore high speed for programming,high efficiency for injection,and lower working voltage are obtained.Simulation and analysis for the proposed SCDI structure device are done and an optimization scheme to improve the utmost performance of SCDI device is given...展开更多
Step channel direct injection(SCDI) flash memory device is successfully achieved by 1 2μm CMOS technology,moreover good performance is obtained.At the bias condition of V g=6V, V d=5V,the programming speed ...Step channel direct injection(SCDI) flash memory device is successfully achieved by 1 2μm CMOS technology,moreover good performance is obtained.At the bias condition of V g=6V, V d=5V,the programming speed of SCDI device is 42μs.Under the condition of V g=-8V, V s=8V,the erasing speed is 24ms.Compared with the same size of conventional flash memory device whose corresponding parameters are 500μs and 24ms,respectively,the performance of SCDI device is remarkably improved.During manufacturing of SCDI device,the key technologies are to make the shallow step with appropriate depth and angle,along with eliminating the etch damage during the process of Si 3N 4 spacer.展开更多
Consistent high-quality and defect-free production is the demand of the day. The product recall not only increases engineering and manufacturing cost but also affects the quality and the reliability of the product in ...Consistent high-quality and defect-free production is the demand of the day. The product recall not only increases engineering and manufacturing cost but also affects the quality and the reliability of the product in the eye of users. The monitoring and improvement of a manufacturing process are the strength of statistical process control. In this article we propose a process monitoring memory-based scheme for continuous data under the assumption of normality to detect small non-random shift patterns in any manufacturing or service process.The control limits for the proposed scheme are constructed. The in-control and out-of-control average run length(AVL) expressions have been derived for the performance evaluation of the proposed scheme. Robustness to non-normality has been tested after simulation study of the run length distribution of the proposed scheme, and the comparisons with Shewhart and exponentially weighted moving average(EWMA) schemes are presented for various gamma and t-distributions. The proposed scheme is effective and attractive as it has one design parameter which differentiates it from the traditional schemes. Finally, some suggestions and recommendations are made for the future work.展开更多
文摘Proposed herein is a novel non planar cell structure for flash memory which has been fabricated to achieve high programming speed with low operating voltage.This memory cell preserves a simple stacked gate structure which only requires an additional masking step to form the novel structure in the channel.For the cell of the 1 2μm gate length,the programming speed of 43μs under the measuring condition of V g=15V, V d=5V,and the erasing time of 24ms under V g=-5V, V s=8V are obtained.The programming speed is faster than that of the conventional planar cell structure.This superior programming speed makes it suitable for high speed application.
文摘Step channel direct injection(SCDI)flash memory device which had been developed changes the hot carrier injection method by making a shallow step in the middle of channel .Therefore high speed for programming,high efficiency for injection,and lower working voltage are obtained.Simulation and analysis for the proposed SCDI structure device are done and an optimization scheme to improve the utmost performance of SCDI device is given...
文摘Step channel direct injection(SCDI) flash memory device is successfully achieved by 1 2μm CMOS technology,moreover good performance is obtained.At the bias condition of V g=6V, V d=5V,the programming speed of SCDI device is 42μs.Under the condition of V g=-8V, V s=8V,the erasing speed is 24ms.Compared with the same size of conventional flash memory device whose corresponding parameters are 500μs and 24ms,respectively,the performance of SCDI device is remarkably improved.During manufacturing of SCDI device,the key technologies are to make the shallow step with appropriate depth and angle,along with eliminating the etch damage during the process of Si 3N 4 spacer.
文摘Consistent high-quality and defect-free production is the demand of the day. The product recall not only increases engineering and manufacturing cost but also affects the quality and the reliability of the product in the eye of users. The monitoring and improvement of a manufacturing process are the strength of statistical process control. In this article we propose a process monitoring memory-based scheme for continuous data under the assumption of normality to detect small non-random shift patterns in any manufacturing or service process.The control limits for the proposed scheme are constructed. The in-control and out-of-control average run length(AVL) expressions have been derived for the performance evaluation of the proposed scheme. Robustness to non-normality has been tested after simulation study of the run length distribution of the proposed scheme, and the comparisons with Shewhart and exponentially weighted moving average(EWMA) schemes are presented for various gamma and t-distributions. The proposed scheme is effective and attractive as it has one design parameter which differentiates it from the traditional schemes. Finally, some suggestions and recommendations are made for the future work.
