The influence of oxygen vacancy-dominated carrier mobility on the performance of memristors has attractedconsiderable attention.The device’s carrier mobility can be significantly improved by forming a nano-multilayer...The influence of oxygen vacancy-dominated carrier mobility on the performance of memristors has attractedconsiderable attention.The device’s carrier mobility can be significantly improved by forming a nano-multilayeredheterostructure when the individual layer thickness is below a critical value.In this work,Pt/[ZrO_(2):Y_(2)O_(3)(YSZ)/SrTiO_(3)(STO)]n/Nb:SrTiO_(3)(NSTO)memristive devices were configurated through laser pulse deposited YSZ/STO nanomultilayeredactive layer with both Pt and NSTO acting as top and counter electrodes.Specifically,the Pt/[YSZ/STO]5/NSTO device with five consecutive layers of YSZ/STO thin film shows superior memristor performance,and itscorresponding carrier mobility presents a significantly enhanced value compared to that of other periodic numbers ofYSZ/STO composed memristive devices.This can be attributed to the increase of oxygen vacancy concentration in thedevice,as evidenced by both experimental results and theoretical analysis.This work provides a significant approach inimproving the performance of memristor dominated by oxygen vacancy transporting mechanism.展开更多
Electromigration is the transport of atoms in metal conductors at high electronic current-densities which creates voids in the conductors and increases the conductors＇ electrical resistance. It was delineated in 1961...Electromigration is the transport of atoms in metal conductors at high electronic current-densities which creates voids in the conductors and increases the conductors＇ electrical resistance. It was delineated in 1961 by Huntington; then modeled by the empirical electrical resistance formula derived by Black in 1969 to fit the dependences of the experimental electrical resistance and failure data on the electrical current density and temperature. Tan in 2007 reviewed 40-years＇ ap- plications of the empirical Black formula to conductor lines interconnecting transistors and other devices in silicon integrated circuits. Since the first Landauer theory in 1957,theorists have attempted for 50 years to justify the drift force or electron momentum transfer assumed by Black as some electron-wind force to impart on the metal atoms and ions to move them. Landauer concluded in 1989 that the electron wind force is untenable even considering the most fundamental and complete many-body quantum transport theory. A driftless or electron-windless atomic void model for metal conductor lines is reviewed in this article. It was developed in the mid-1980 and described in 1996 by Sah in a homework solution. This model accounts for all the current and temperature dependences of experimental resistance data fitted to the empiri- cal Black formula. Exact analytical solutions were obtained for the metal conductor line resistance or current, R （t）/R （0） = J（t）/J（0） = [1-2（t/τα）^1/α]^-1/2 ,in the bond-breaking limit with α = 1 to 2 and diffusion limit with α = 2 to 4,from low to high current densities, where τα is the characteristic time constant of the mechanism, containing bond breaking and diffusion rates and activation energies of the metal.展开更多
基金Projects(2023JJ30690,2022JJ30722)supported by the Natural Science Foundation of Hunan Province,ChinaProject(kq2202093)supported by the Natural Science Foundation of Changsha,ChinaProject(SKL202202SIC)supported by the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure,China。
文摘The influence of oxygen vacancy-dominated carrier mobility on the performance of memristors has attractedconsiderable attention.The device’s carrier mobility can be significantly improved by forming a nano-multilayeredheterostructure when the individual layer thickness is below a critical value.In this work,Pt/[ZrO_(2):Y_(2)O_(3)(YSZ)/SrTiO_(3)(STO)]n/Nb:SrTiO_(3)(NSTO)memristive devices were configurated through laser pulse deposited YSZ/STO nanomultilayeredactive layer with both Pt and NSTO acting as top and counter electrodes.Specifically,the Pt/[YSZ/STO]5/NSTO device with five consecutive layers of YSZ/STO thin film shows superior memristor performance,and itscorresponding carrier mobility presents a significantly enhanced value compared to that of other periodic numbers ofYSZ/STO composed memristive devices.This can be attributed to the increase of oxygen vacancy concentration in thedevice,as evidenced by both experimental results and theoretical analysis.This work provides a significant approach inimproving the performance of memristor dominated by oxygen vacancy transporting mechanism.
文摘Electromigration is the transport of atoms in metal conductors at high electronic current-densities which creates voids in the conductors and increases the conductors＇ electrical resistance. It was delineated in 1961 by Huntington; then modeled by the empirical electrical resistance formula derived by Black in 1969 to fit the dependences of the experimental electrical resistance and failure data on the electrical current density and temperature. Tan in 2007 reviewed 40-years＇ ap- plications of the empirical Black formula to conductor lines interconnecting transistors and other devices in silicon integrated circuits. Since the first Landauer theory in 1957,theorists have attempted for 50 years to justify the drift force or electron momentum transfer assumed by Black as some electron-wind force to impart on the metal atoms and ions to move them. Landauer concluded in 1989 that the electron wind force is untenable even considering the most fundamental and complete many-body quantum transport theory. A driftless or electron-windless atomic void model for metal conductor lines is reviewed in this article. It was developed in the mid-1980 and described in 1996 by Sah in a homework solution. This model accounts for all the current and temperature dependences of experimental resistance data fitted to the empiri- cal Black formula. Exact analytical solutions were obtained for the metal conductor line resistance or current, R （t）/R （0） = J（t）/J（0） = [1-2（t/τα）^1/α]^-1/2 ,in the bond-breaking limit with α = 1 to 2 and diffusion limit with α = 2 to 4,from low to high current densities, where τα is the characteristic time constant of the mechanism, containing bond breaking and diffusion rates and activation energies of the metal.
