期刊文献+
共找到4篇文章
< 1 >
每页显示 20 50 100
Non-formation of vacuum states for Navier-Stokes equations with density-dependent viscosity
1
作者 ZHANG Ting FANG Dao-yuan 《Journal of Zhejiang University-Science A(Applied Physics & Engineering)》 SCIE EI CAS CSCD 2007年第10期1681-1690,共10页
We consider the Cauchy problem, free boundary problem and piston problem for one-dimensional compressible Navier-Stokes equations with density-dependent viscosity. Using the reduction to absurdity method, we prove tha... We consider the Cauchy problem, free boundary problem and piston problem for one-dimensional compressible Navier-Stokes equations with density-dependent viscosity. Using the reduction to absurdity method, we prove that the weak solutions to these systems do not exhibit vacuum states, provided that no vacuum states are present initially. The essential re- quirements on the solutions are that the mass and energy of the fluid are locally integrable at each time, and the Lloc1-norm of the velocity gradient is locally integrable in time. 展开更多
关键词 Compressible Navier-Stokes equations Vacuum states Density-dependent viscosity
下载PDF
3d 金属电离损失谱研究 被引量:1
2
作者 张强基 陈乃群 华中一 《物理学报》 SCIE EI CAS CSCD 北大核心 1991年第8期1344-1348,共5页
本文利用俄歇电子谱仪对Ti,Cr,Ni,Cu等3d金属的电离损失谱作研究,得到它们的空态密度的一些性质:空态密度的最大值位置、空态密度最大值的相对数值和空态密度的宽度。所得结果与理论模型一致。另外,从电离损失谱获得的束缚能值和自旋-... 本文利用俄歇电子谱仪对Ti,Cr,Ni,Cu等3d金属的电离损失谱作研究,得到它们的空态密度的一些性质:空态密度的最大值位置、空态密度最大值的相对数值和空态密度的宽度。所得结果与理论模型一致。另外,从电离损失谱获得的束缚能值和自旋-轨道分裂值与用XPS所获结果符合良好。电离损失谱是一种研究空态密度的有效方法。 展开更多
关键词 金属 电离损失谱 空态密度
原文传递
A new approach to the time evolution of characteristic function of the density operator obtained by virtue of thermal entangled state representation 被引量:3
3
作者 CHEN Feng FAN HongYi 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2012年第11期2076-2080,共5页
Like the progress made by Dirac that wave function ψ(x) was reformed as x |ψ,where x| is the coordinate representation,we endow the characteristic function χλ = Tr(e λa-λaρ) of density operator ρ with the mean... Like the progress made by Dirac that wave function ψ(x) was reformed as x |ψ,where x| is the coordinate representation,we endow the characteristic function χλ = Tr(e λa-λaρ) of density operator ρ with the meaning of wave function of |ρ in the thermal entangled state η| representation in the doubled Fock space,χλ = η = λ|ρ,where |ρ = ρ|η = 0.We find the time evolution of χλ can then be directly and neatly obtained via this approach.The way of deriving the density operator from η = λ | ρ is also presented. 展开更多
关键词 characteristic function density operator master equations thermal entangled state representation
原文传递
Mg doping and native N vacancy effect on electronic and transport properties of AlN nanowires 被引量:1
4
作者 QIN Mei SHANG Yan +1 位作者 WANG Xiao ZHANG GuiLing 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2015年第5期832-841,共10页
The effects of Mg doping(MgAl) and native N vacancy(VN) on the electronic structures and transport properties of Al N nanowire(Al NNW) were theoretically investigated by using density functional theory. Either the MgA... The effects of Mg doping(MgAl) and native N vacancy(VN) on the electronic structures and transport properties of Al N nanowire(Al NNW) were theoretically investigated by using density functional theory. Either the MgAl defect or the VN defect prefers to be formed on the Al NNW surfaces. Both MgAl and VN defects could increase the conductivity owing to introducing a defect band inside the band gap of Al N and split the Al N band gap into two subgaps. The defect concentration has little influence on the magnitude of the subgaps. The MgAl serves as a shallow acceptor rendering the nanowire a p-type conductor. The VN introduces a deep donor state enabling the nanowire an n-type conductor. The MgAl systems exhibit higher conductivity than the VN ones owing to the narrow subgaps of MgAl systems. The conductivity is roughly proportional to the defect concentration in the MgAl and VN defect systems. When the MgAl and VN coexist, the hole state of the MgAl defect and the electron state of the VN defect will compensate each other and their coupling state appears just above the valence-band maximum leading to a little decrease of the band gap compared with the pure Al NNW, which is unfavorable for the enhancing of the conductivity. 展开更多
关键词 doping enabling rendering compensate introducing valence magnitude defects narrow nanotubes
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部