The model that two two level atoms interact with a singel mode cavity is studied. The exact solution of the time evolution operator for the two atom Jaynes Cummings model is presented by the bare states approach. Furt...The model that two two level atoms interact with a singel mode cavity is studied. The exact solution of the time evolution operator for the two atom Jaynes Cummings model is presented by the bare states approach. Furthermore, we investigate the dynamical properties of the photon statistics of the cavity field, and obtain a number of novel features.展开更多
Cd3As2 is an important II-V group semiconductor with excellent electrical and optoelectronic properties. In this work, we report the large scale growth of single-crystalline Cd3As2 nanowires via a simple chemical vapo...Cd3As2 is an important II-V group semiconductor with excellent electrical and optoelectronic properties. In this work, we report the large scale growth of single-crystalline Cd3As2 nanowires via a simple chemical vapor deposition method. Single nanowire field-effect transistors were fabricated with the as-grown Cd3As2 nanowires, which exhibited a high lon/loff of 104 with a hole mobility of 6.02 cm2V-1s-1. Photoresponse properties of the Cd3As2 nanowires were also investigated by illuminating the nanowires with white light by varying intensities. Besides, flexible photodetectors were also fabricated on flexible PET substrate, showing excellent mechanical stablility and flexible electro-optical properties under various bending states and bending cycles. Our results indicate that Cd3As2 nanowires can be the basic material of next generation electronic and ootoelectronic devices.展开更多
文摘The model that two two level atoms interact with a singel mode cavity is studied. The exact solution of the time evolution operator for the two atom Jaynes Cummings model is presented by the bare states approach. Furthermore, we investigate the dynamical properties of the photon statistics of the cavity field, and obtain a number of novel features.
基金supported by the National Natural Science Foundation of China(Grant Nos.61377033 and 91123008)
文摘Cd3As2 is an important II-V group semiconductor with excellent electrical and optoelectronic properties. In this work, we report the large scale growth of single-crystalline Cd3As2 nanowires via a simple chemical vapor deposition method. Single nanowire field-effect transistors were fabricated with the as-grown Cd3As2 nanowires, which exhibited a high lon/loff of 104 with a hole mobility of 6.02 cm2V-1s-1. Photoresponse properties of the Cd3As2 nanowires were also investigated by illuminating the nanowires with white light by varying intensities. Besides, flexible photodetectors were also fabricated on flexible PET substrate, showing excellent mechanical stablility and flexible electro-optical properties under various bending states and bending cycles. Our results indicate that Cd3As2 nanowires can be the basic material of next generation electronic and ootoelectronic devices.
