Geometry optimization of p-C_(6)H_(4)-connected cyclo[20]carbon(p-C_(6)H_(4)-C_(20))was carried out at M062X/6-311G(d,p)level,three kinds of bond orders(Mayer,Laplacian,and Wiberg),electron-hole distributions,localize...Geometry optimization of p-C_(6)H_(4)-connected cyclo[20]carbon(p-C_(6)H_(4)-C_(20))was carried out at M062X/6-311G(d,p)level,three kinds of bond orders(Mayer,Laplacian,and Wiberg),electron-hole distributions,localized orbital locators(LOL),and infrared(IR)spectrum were also performed at the same level.Based on TD-DFT M062X/6-311G(d,p)method,the first 20 excited states and ultraviolet(UV)spectra of p-C_(6)H_(4)-C_(20) were calculated.Calculation results of π-electron delocalization analyses prove thatπ-electron delocalization of p-C_(6)H_(4)-C_(20) is more likely to occur on shorter C-C bonds rather than longer C-C bonds,and inside/outside of the ring plane rather than above/below the ring plane.Two absorption peaks of p-C_(6)H_(4)-C_(20) locate at about 319 nm and 236 nm,respectively.展开更多
The reverse snapback phenomena （RSP） on I-V characteristics of static induction thyristors （SITH） are physically researched. The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to th...The reverse snapback phenomena （RSP） on I-V characteristics of static induction thyristors （SITH） are physically researched. The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to the conducting-state,when the anode voltage in the forward blocking-state is increased to a critical value. The RSP I-V characteristics of the power SITH are analyzed in terms of operating mechanism, double carrier injection effect, space charge effect, electron-hole plasma in the channel, and the variation in carrier lifetime. The reverse snapback mechanism is theoretically pro- posed and the mathematical expressions to calculate the voltage and current values at the snapback point are presented. The computing results are compared with the experiment values.展开更多
Rod-shaped PbW O4 microcrystals of length 1 μm were fabricated by a hydrothermal route and subsequent calcination. Pt nanoparticles（NPs） of different contents（0.5 wt%,1 wt% and 2 wt%） were subsequently deposited ...Rod-shaped PbW O4 microcrystals of length 1 μm were fabricated by a hydrothermal route and subsequent calcination. Pt nanoparticles（NPs） of different contents（0.5 wt%,1 wt% and 2 wt%） were subsequently deposited on the PbW O4 microcrystals,producing robust Pt/PbW O4 composite microcrystals. The PbW O4 microcrystals and Pt/PbW O4 photocatalysts were characterized by X-ray diffraction,N2 sorption measurements,scanning electron microscopy,transmission electron microscopy,and X-ray photoelectron,photoluminescence,Fourier-transform infrared,and ultraviolet-visible diffuse reflectance spectroscopies. The photocatalytic performances of the catalysts were evaluated by the consecutive photocatalytic degradation of acid orange II dye. The Pt/PbW O4 composite microcrystals exhibited high photocatalytic activity and stability. The deposition of Pt NPs produced surface plasmon resonance（SPR）,which induced a large visible light absorption. A Pt NP content of 1-2 wt% resulted in an ~2 times increase in photocatalytic activity,compared with the activity of Pt/PbW O4. The crystal structure and high crystallinity of PbW O4 resulted in its favorable photocatalytic property,and the SPR effect of the Pt NPs promoted visible light harvesting. The Pt NPs also enhanced the separation of photo-generated electrons and holes,which further promoted the photocatalytic reaction.展开更多
The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate na...The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate nanometer silicon MOS field-effect transistors. Two electron and two hole surface channels are simultaneously present in all channel current ranges. Output and transfer characteristics are computed over practical base and gate oxide thicknesses. The bipolar theory corroborates well with experimental data reported recently for FinFETs with metal/silicon and p/n junction source/drain contacts. Single-device realization of CMOS inverter and SRAM memory circuit functions are recognized.展开更多
This paper describes the bipolar field-effect transistor （BiFET） and its theory. Analytical solution is ob- tained from partitioning the two-dimensional transistor into two one-dimensional transistors. The analysis ...This paper describes the bipolar field-effect transistor （BiFET） and its theory. Analytical solution is ob- tained from partitioning the two-dimensional transistor into two one-dimensional transistors. The analysis employs the parametric surface-electric-potential and the electrochemical （quasi-Fermi） potential-gradient driving force to compute the current. Output and transfer D. C. current and conductance versus voltage are presented over practi- cal ranges of terminal D. C. voltages and device parameters. Electron and hole surface channel currents are pres- ent simultaneously, a new feature which could provide circuit functions in one physical transistor such as the CMOS inverter and SRAM memory.展开更多
This paper describes the short channel theory of the bipolar field-effect transistor （BiFET） by partitioning the transistor into two sections,the source and drain sections,each can operate as the electron or hole em...This paper describes the short channel theory of the bipolar field-effect transistor （BiFET） by partitioning the transistor into two sections,the source and drain sections,each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and electron-hole-channel components of the output and transfer currents and conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the long physical channel currents and conductances from those of the short electrical channels are reported.展开更多
This paper gives the short channel analytical theory of the bipolar field-effect transistor （BiFET） with the drift and diffusion currents separately computed in the analytical theory. As in the last-month paper whic...This paper gives the short channel analytical theory of the bipolar field-effect transistor （BiFET） with the drift and diffusion currents separately computed in the analytical theory. As in the last-month paper which represented the drift and diffusion current by the single electrochemical （potential-gradient） current, the two-dimensional transistor is partitioned into two sections, the source and drain sections, each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is then obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and the drift and diffusion components of the electron-channel and hole-channel currents and output and transfer conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the two-section short-channel theory from the one-section long-channel theory are described.展开更多
Pure water has been characterized for nearly a century, by its dissociation into hydronium （H3O）1＋ and hydroxide （HO）1- ions. As a chemical equilibrium reaction, the equilibrium constant, known as the ion product...Pure water has been characterized for nearly a century, by its dissociation into hydronium （H3O）1＋ and hydroxide （HO）1- ions. As a chemical equilibrium reaction, the equilibrium constant, known as the ion product or the product of the equilibrium concentration of the two ion species, has been extensively measured by chemists over the liquid water temperature and pressure range. The experimental data have been nonlinear least-squares fitted to chemical thermodynamic-based equilibrium equations, which have been accepted as the industrial standard for 35 years. In this study, a new and statistical-physics-based water ion product equation is presented, in which, the ions are the positively charged protons and the negatively charged proton-holes or prohols. Nonlinear least squares fits of our equation to the experimental data in the 0-100℃ pure liquid water range, give a factor of two better precision than the 35-year industrial standard.展开更多
This paper describes the drift-diffusion theory of the bipolar field-effect transistor （BiFET） with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin-pure-base. Analytical solution is obt...This paper describes the drift-diffusion theory of the bipolar field-effect transistor （BiFET） with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin-pure-base. Analytical solution is obtained by partitioning the two-dimensional transistor into two one-dimensional problems coupled by the parametric sur- face-electric-potential. Total and component output and transfer currents and conductances versus D. C. voltages from the drift-diffusion theory, and their deviations from the electrochemical （quasi-Fermi） potential-gradient theory,are presented over practical ranges of thicknesses of the silicon base and gate oxide. A substantial contri- bution from the longitudinal gradient of the square of the transverse electric field is shown.展开更多
文摘Geometry optimization of p-C_(6)H_(4)-connected cyclo[20]carbon(p-C_(6)H_(4)-C_(20))was carried out at M062X/6-311G(d,p)level,three kinds of bond orders(Mayer,Laplacian,and Wiberg),electron-hole distributions,localized orbital locators(LOL),and infrared(IR)spectrum were also performed at the same level.Based on TD-DFT M062X/6-311G(d,p)method,the first 20 excited states and ultraviolet(UV)spectra of p-C_(6)H_(4)-C_(20) were calculated.Calculation results of π-electron delocalization analyses prove thatπ-electron delocalization of p-C_(6)H_(4)-C_(20) is more likely to occur on shorter C-C bonds rather than longer C-C bonds,and inside/outside of the ring plane rather than above/below the ring plane.Two absorption peaks of p-C_(6)H_(4)-C_(20) locate at about 319 nm and 236 nm,respectively.
文摘The reverse snapback phenomena （RSP） on I-V characteristics of static induction thyristors （SITH） are physically researched. The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to the conducting-state,when the anode voltage in the forward blocking-state is increased to a critical value. The RSP I-V characteristics of the power SITH are analyzed in terms of operating mechanism, double carrier injection effect, space charge effect, electron-hole plasma in the channel, and the variation in carrier lifetime. The reverse snapback mechanism is theoretically pro- posed and the mathematical expressions to calculate the voltage and current values at the snapback point are presented. The computing results are compared with the experiment values.
基金supported by the National Natural Science Foundation of China(2106700421567008+5 种基金21263005)Project of Jiangxi Province Natural Science Foundation China(20133BAB21003)Training Programs of Innovation and Entrepreneurship for Undergraduates of Jiangxi Province(201310407046)The Landing Project of Science and Technology of Colleges and Universities in Jiangxi Province(KJLD14046)Young Scientist Training Project of Jiangxi Province(20122BCB23015)Yuanhang Engineering of Jiangxi Province~~
文摘Rod-shaped PbW O4 microcrystals of length 1 μm were fabricated by a hydrothermal route and subsequent calcination. Pt nanoparticles（NPs） of different contents（0.5 wt%,1 wt% and 2 wt%） were subsequently deposited on the PbW O4 microcrystals,producing robust Pt/PbW O4 composite microcrystals. The PbW O4 microcrystals and Pt/PbW O4 photocatalysts were characterized by X-ray diffraction,N2 sorption measurements,scanning electron microscopy,transmission electron microscopy,and X-ray photoelectron,photoluminescence,Fourier-transform infrared,and ultraviolet-visible diffuse reflectance spectroscopies. The photocatalytic performances of the catalysts were evaluated by the consecutive photocatalytic degradation of acid orange II dye. The Pt/PbW O4 composite microcrystals exhibited high photocatalytic activity and stability. The deposition of Pt NPs produced surface plasmon resonance（SPR）,which induced a large visible light absorption. A Pt NP content of 1-2 wt% resulted in an ~2 times increase in photocatalytic activity,compared with the activity of Pt/PbW O4. The crystal structure and high crystallinity of PbW O4 resulted in its favorable photocatalytic property,and the SPR effect of the Pt NPs promoted visible light harvesting. The Pt NPs also enhanced the separation of photo-generated electrons and holes,which further promoted the photocatalytic reaction.
文摘The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate nanometer silicon MOS field-effect transistors. Two electron and two hole surface channels are simultaneously present in all channel current ranges. Output and transfer characteristics are computed over practical base and gate oxide thicknesses. The bipolar theory corroborates well with experimental data reported recently for FinFETs with metal/silicon and p/n junction source/drain contacts. Single-device realization of CMOS inverter and SRAM memory circuit functions are recognized.
文摘This paper describes the bipolar field-effect transistor （BiFET） and its theory. Analytical solution is ob- tained from partitioning the two-dimensional transistor into two one-dimensional transistors. The analysis employs the parametric surface-electric-potential and the electrochemical （quasi-Fermi） potential-gradient driving force to compute the current. Output and transfer D. C. current and conductance versus voltage are presented over practi- cal ranges of terminal D. C. voltages and device parameters. Electron and hole surface channel currents are pres- ent simultaneously, a new feature which could provide circuit functions in one physical transistor such as the CMOS inverter and SRAM memory.
文摘This paper describes the short channel theory of the bipolar field-effect transistor （BiFET） by partitioning the transistor into two sections,the source and drain sections,each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and electron-hole-channel components of the output and transfer currents and conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the long physical channel currents and conductances from those of the short electrical channels are reported.
文摘This paper gives the short channel analytical theory of the bipolar field-effect transistor （BiFET） with the drift and diffusion currents separately computed in the analytical theory. As in the last-month paper which represented the drift and diffusion current by the single electrochemical （potential-gradient） current, the two-dimensional transistor is partitioned into two sections, the source and drain sections, each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is then obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and the drift and diffusion components of the electron-channel and hole-channel currents and output and transfer conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the two-section short-channel theory from the one-section long-channel theory are described.
文摘Pure water has been characterized for nearly a century, by its dissociation into hydronium （H3O）1＋ and hydroxide （HO）1- ions. As a chemical equilibrium reaction, the equilibrium constant, known as the ion product or the product of the equilibrium concentration of the two ion species, has been extensively measured by chemists over the liquid water temperature and pressure range. The experimental data have been nonlinear least-squares fitted to chemical thermodynamic-based equilibrium equations, which have been accepted as the industrial standard for 35 years. In this study, a new and statistical-physics-based water ion product equation is presented, in which, the ions are the positively charged protons and the negatively charged proton-holes or prohols. Nonlinear least squares fits of our equation to the experimental data in the 0-100℃ pure liquid water range, give a factor of two better precision than the 35-year industrial standard.
文摘This paper describes the drift-diffusion theory of the bipolar field-effect transistor （BiFET） with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin-pure-base. Analytical solution is obtained by partitioning the two-dimensional transistor into two one-dimensional problems coupled by the parametric sur- face-electric-potential. Total and component output and transfer currents and conductances versus D. C. voltages from the drift-diffusion theory, and their deviations from the electrochemical （quasi-Fermi） potential-gradient theory,are presented over practical ranges of thicknesses of the silicon base and gate oxide. A substantial contri- bution from the longitudinal gradient of the square of the transverse electric field is shown.
