The energy spectra of the ground state for an exciton (X) trapped by a neutral acceptor (A<SUP>0</SUP>) in a quantum dot with a parabolic confinement have been calculated as a function of the electron-to-h...The energy spectra of the ground state for an exciton (X) trapped by a neutral acceptor (A<SUP>0</SUP>) in a quantum dot with a parabolic confinement have been calculated as a function of the electron-to-hole mass ratio σ by using the hyperspherical coordinates. We find that the (A<SUP>0</SUP>,X) complex confined in a quantum dot has in general a larger binding energy than those in a two-dimensional quantum well and a three-dimensional bulk semiconductor, and the binding energy decreases with the increase of the electron-to-hole mass ratio.展开更多
With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has ...With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has become one of the hot spots of research. ZnTe is commonly used in the semiconductor industry due to its superior optoelectronic properties. Electrochemical deposition is one of the most frequently used methods to prepare ZnTe thin films. However,the traditional electrochemical deposition technology has many shortcomings, such as slow deposition rate and poor film quality. These hinder the large-scale promotion of zinc telluride electrochemical deposition technology. To solve the problems encountered in the preparation of semiconductor thin films by conventional electrochemical deposition, and based on the photoconductive properties of semiconductor materials themselves, the basic principles of photoelectrochemistry of semiconductor electrodes, and some characteristics of the electrochemical deposition process of semiconductor materials, the use of photoelectrochemical deposition method for the preparation of semiconductor materials was proposed. Firstly, the electrochemical behaviors(electrode reactions, nucleation growth and charge transport process) of the ZnTe electrodeposition under illumination and dark state conditions were studied. Then, the potentiostatic deposition of ZnTe was carried out under light and dark conditions. The phase structure, morphology and composition of the sediments were studied using X-ray diffractometer, scanning electron microscope and other testing methods. Finally, the photoelectrochemical deposition mechanisms were analyzed. Compared with conventional electrochemical deposition, photoelectrochemical deposition increases the current density during deposition and reduces the charge transfer impedance during ZnTe deposition process. In addition, since light illumination promotes the deposition of the difficult-to-deposit element Zn, the component ratio of ZnTe thin films prepared by photoelectrochemical deposition is closer to 1:1, making it a viable and reliable approach for ZnTe production.展开更多
In this review, we look back on some intriguing and puzzling issues in electron-doped cuprate superconductors, such as electron-hole asymmetry, two types of carriers, quantum critical points, order-parameter symmetry,...In this review, we look back on some intriguing and puzzling issues in electron-doped cuprate superconductors, such as electron-hole asymmetry, two types of carriers, quantum critical points, order-parameter symmetry, etc. The necessity of study on this family is invoked in comparison with the hole-doped counterparts from several aspects. The related progress, especially in last few years, has been outlined point to point, as well as other hot topics like the discovery of ambipolar superconductors, the applications in superconducting electronics, and the emergency of superconductivity in parent compounds. In perspective, the utilization of blooming advanced techniques, electric double layer transistor and combinatorial film deposition, will bring some new insights into the mechanism such as electron-doped cuprate superconductors.展开更多
Oxygen vacancy（VO） plays a vital role in semiconductor photocatalysis. Rutile TiO2 nanomaterials with controllable contents of VO（0–2.18%） are fabricated via an insitu solid-state chemical reduction strategy, wit...Oxygen vacancy（VO） plays a vital role in semiconductor photocatalysis. Rutile TiO2 nanomaterials with controllable contents of VO（0–2.18%） are fabricated via an insitu solid-state chemical reduction strategy, with color from white to black. The bandgap of the resultant rutile TiO2 is reduced from 3.0 to 2.56 e V, indicating the enhanced visible light absorption. The resultant rutile TiO2 with optimal contents of VO（2.07%） exhibits a high solar-driven photocatalytic hydrogen production rate of 734 μmol h-1, which is about four times as high as that of the pristine one（185 μmol h-1）. The presence of VOelevates the apparent Fermi level of rutile TiO2 and promotes the efficient electronhole separation obviously, which favor the escape of photogenerated electrons and prolong the life-time（7.6×103 ns） of photogenerated charge carriers, confirmed by scanning Kelvin probe microscopy, surface photovoltage spectroscopy and transient-state fluorescence. VO-mediated efficient photogenerated electron-hole separation strategy may provide new insight for fabricating other high-performance semiconductor oxide photocatalysts.展开更多
基金The project supported by National Natural Science Foundation of China under Grant No.10275014
文摘The energy spectra of the ground state for an exciton (X) trapped by a neutral acceptor (A<SUP>0</SUP>) in a quantum dot with a parabolic confinement have been calculated as a function of the electron-to-hole mass ratio σ by using the hyperspherical coordinates. We find that the (A<SUP>0</SUP>,X) complex confined in a quantum dot has in general a larger binding energy than those in a two-dimensional quantum well and a three-dimensional bulk semiconductor, and the binding energy decreases with the increase of the electron-to-hole mass ratio.
基金Project(51774341) supported by the National Natural Science Foundation of ChinaProject(2018GK4001) supported by the Science and Technology Tackling and Transformation of Major Scientific and Technological Achievements Project of Hunan Province,China。
文摘With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has become one of the hot spots of research. ZnTe is commonly used in the semiconductor industry due to its superior optoelectronic properties. Electrochemical deposition is one of the most frequently used methods to prepare ZnTe thin films. However,the traditional electrochemical deposition technology has many shortcomings, such as slow deposition rate and poor film quality. These hinder the large-scale promotion of zinc telluride electrochemical deposition technology. To solve the problems encountered in the preparation of semiconductor thin films by conventional electrochemical deposition, and based on the photoconductive properties of semiconductor materials themselves, the basic principles of photoelectrochemistry of semiconductor electrodes, and some characteristics of the electrochemical deposition process of semiconductor materials, the use of photoelectrochemical deposition method for the preparation of semiconductor materials was proposed. Firstly, the electrochemical behaviors(electrode reactions, nucleation growth and charge transport process) of the ZnTe electrodeposition under illumination and dark state conditions were studied. Then, the potentiostatic deposition of ZnTe was carried out under light and dark conditions. The phase structure, morphology and composition of the sediments were studied using X-ray diffractometer, scanning electron microscope and other testing methods. Finally, the photoelectrochemical deposition mechanisms were analyzed. Compared with conventional electrochemical deposition, photoelectrochemical deposition increases the current density during deposition and reduces the charge transfer impedance during ZnTe deposition process. In addition, since light illumination promotes the deposition of the difficult-to-deposit element Zn, the component ratio of ZnTe thin films prepared by photoelectrochemical deposition is closer to 1:1, making it a viable and reliable approach for ZnTe production.
基金supported by the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB07020100)the National Natural Science Foundation of China(Grant No.11474338)the National Key Basic Research Program of China(Grant No.2015CB921000)
文摘In this review, we look back on some intriguing and puzzling issues in electron-doped cuprate superconductors, such as electron-hole asymmetry, two types of carriers, quantum critical points, order-parameter symmetry, etc. The necessity of study on this family is invoked in comparison with the hole-doped counterparts from several aspects. The related progress, especially in last few years, has been outlined point to point, as well as other hot topics like the discovery of ambipolar superconductors, the applications in superconducting electronics, and the emergency of superconductivity in parent compounds. In perspective, the utilization of blooming advanced techniques, electric double layer transistor and combinatorial film deposition, will bring some new insights into the mechanism such as electron-doped cuprate superconductors.
基金supported by the Key Program Projects of the National Natural Science Foundation of China (21631004)the National Natural Science Foundation of China (51672073)
文摘Oxygen vacancy（VO） plays a vital role in semiconductor photocatalysis. Rutile TiO2 nanomaterials with controllable contents of VO（0–2.18%） are fabricated via an insitu solid-state chemical reduction strategy, with color from white to black. The bandgap of the resultant rutile TiO2 is reduced from 3.0 to 2.56 e V, indicating the enhanced visible light absorption. The resultant rutile TiO2 with optimal contents of VO（2.07%） exhibits a high solar-driven photocatalytic hydrogen production rate of 734 μmol h-1, which is about four times as high as that of the pristine one（185 μmol h-1）. The presence of VOelevates the apparent Fermi level of rutile TiO2 and promotes the efficient electronhole separation obviously, which favor the escape of photogenerated electrons and prolong the life-time（7.6×103 ns） of photogenerated charge carriers, confirmed by scanning Kelvin probe microscopy, surface photovoltage spectroscopy and transient-state fluorescence. VO-mediated efficient photogenerated electron-hole separation strategy may provide new insight for fabricating other high-performance semiconductor oxide photocatalysts.
