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PTFE-SiO_(2)复合涂层电子发射特性及抑制放电
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作者 蔡亚辉 王丹 +1 位作者 张雯 贺永宁 《表面技术》 EI CAS CSCD 北大核心 2023年第6期369-376,共8页
目的调控空间电子器件有机介质聚四氟乙烯(PTFE)表面的二次电子发射系数(SEY)接近1,以降低表面电荷沉积速率,减少静电放电(ESD)的发生。方法通过磁力搅拌将PTFE分散液和SiO_(2)粉末混合均匀,制备不同浓度配比的PTFE-SiO_(2)混合溶液,将... 目的调控空间电子器件有机介质聚四氟乙烯(PTFE)表面的二次电子发射系数(SEY)接近1,以降低表面电荷沉积速率,减少静电放电(ESD)的发生。方法通过磁力搅拌将PTFE分散液和SiO_(2)粉末混合均匀,制备不同浓度配比的PTFE-SiO_(2)混合溶液,将混合溶液旋涂在覆铜板表面,在80℃烘箱中加热4h得到复合涂层。利用扫描电子显微镜(SEM)对涂层表面形貌进行观察,采用局域漏电流法对复合涂层的二次电子发射系数进行测试,通过MATLAB对表面电势进行仿真计算,在SEM中对复合涂层放电特性进行测试。结果从SEM图可以看出,随着SiO_(2)浓度的增大,复合涂层表面SiO_(2)颗粒变得密集。从SEY测试结果可以看出,在SEY>1的能量区间内,复合涂层的SEY随SiO_(2)浓度的增大而逐渐降低,当SiO_(2)质量分数大于15%后,涂层的SEY基本保持不变;在SEY<1的能量区间内,当SiO_(2)浓度为15%时,复合涂层的SEY达到最大值。表面电势仿真计算结果及放电测试结果显示,复合涂层能有效降低表面电荷沉积速率及增大放电阈值。结论当SiO_(2)颗粒质量分数为15%时,复合涂层SEY的调控效果最显著,SEY最大值从2.0变化到1.6,10keV能量下的SEY从0.6变化到0.8。当SiO_(2)颗粒质量分数大于15%时,复合涂层能有效降低真空器件PTFE表面电荷沉积速率,提高放电阈值,减少静电放电的发生。因此,这是一种有效提高航天器电子器件可靠性和工作时间的表面处理方法。 展开更多
关键词 空间电子器件 静电放电 SiO_(2) PTFE 复合涂层 二次电子发射系数
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Nanoscience and the nano-bioelectronics frontier
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作者 Xiaojie Duan Charles M. Lieber 《Nano Research》 SCIE EI CAS CSCD 2015年第1期1-22,共22页
This review describes work presented in the 2014 inaugural Tsinghua University Press-Springer Nano Research Award lecture, as well as current and future opportunities for nanoscience research at the interface with bra... This review describes work presented in the 2014 inaugural Tsinghua University Press-Springer Nano Research Award lecture, as well as current and future opportunities for nanoscience research at the interface with brain science. First, we briefly summarize some of the considerations and the research journey that has led to our focus on bottom-up nanoscale science and technology. Second, we recapitulate the motivation for and our seminal contributions to nanowire- based nanoscience and technology, including the rational design and synthesis of increasingly complex nanowire structures, and the corresponding broad range of "applications" enabled by the capability to control structure, com- position and size from the atomic level upwards. Third, we describe in more detail nanowire-based electronic devices as revolutionary tools for brain science, including (i) motivation for nanoelectronics in brain science, (ii) demonstration of nanowire nanoelectronic arrays for high-spatial/high-temporal resolution extracellular recording, (iii) the development of fundamentally-new intracellular nanoelectronic devices that approach the sizes of single ion channels, (iv) the introduction and demonstration of a new paradigm for innervating cell networks with addressable nanoelectronic arrays in three-dimensions. Last, we conclude with a brief discussion of the exciting and potentially transformative advances expected to come from work at the nanoelectronics-brain interface. 展开更多
关键词 one-dimensional materials two-dimensional materials NANOWIRES carbon nanotubes bottom-up paradigm nanoelectronics nanoelectronic arrays neural probes electrophysiolog35neural circuits brain activity map chronic recording and stimulation brain-machine interfaces
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