The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of ...The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of barriers are presented in SIT,corresponding to channel voltage barrier control (CVBC) mechanism and space charge limited control (SCLC) mechanism respectively.With the increase of drain voltage,the gradual transferring of operational mechanism from CVBC to SCLC is demonstrated.It points out that CVBC mechanism and its contest relationship with space charge barrier makes the SIT distinctly differentiated from JFET and triode devices,etc.The contest relationship of the two potential barriers also results in three different working regions,which are distinctly marked and analyzed.Furthermore,the extreme importance of grid voltage on SCE is illustrated.展开更多
For a low surface barrier, the energy band, barrier height and width of the space charge region at the surface of relatively large grains of ZnO are presented analytically on condition that the electron distribution o...For a low surface barrier, the energy band, barrier height and width of the space charge region at the surface of relatively large grains of ZnO are presented analytically on condition that the electron distribution obeys the Boltzmann statistics. It is shown that the temperature in the space charge distribution factor has an important effect on the energy band, barrier height and width of the space charge region. The depletion approximation is a model in which the temperature in the space charge distribution factor is zero. Our results are better than the depletion approximation.展开更多
文摘The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of barriers are presented in SIT,corresponding to channel voltage barrier control (CVBC) mechanism and space charge limited control (SCLC) mechanism respectively.With the increase of drain voltage,the gradual transferring of operational mechanism from CVBC to SCLC is demonstrated.It points out that CVBC mechanism and its contest relationship with space charge barrier makes the SIT distinctly differentiated from JFET and triode devices,etc.The contest relationship of the two potential barriers also results in three different working regions,which are distinctly marked and analyzed.Furthermore,the extreme importance of grid voltage on SCE is illustrated.
文摘For a low surface barrier, the energy band, barrier height and width of the space charge region at the surface of relatively large grains of ZnO are presented analytically on condition that the electron distribution obeys the Boltzmann statistics. It is shown that the temperature in the space charge distribution factor has an important effect on the energy band, barrier height and width of the space charge region. The depletion approximation is a model in which the temperature in the space charge distribution factor is zero. Our results are better than the depletion approximation.
