为解决集成电路的全芯片静电防护设计中寄生电阻导致的防护空间压缩问题,提出了一种实用的能够在版图设计过程中提高集成电路静电放电(ESD)防护能力的仿真方法,用于评估和控制ESD电流通路上的寄生电阻,辅助ESD防护设计,预估器件静电防...为解决集成电路的全芯片静电防护设计中寄生电阻导致的防护空间压缩问题,提出了一种实用的能够在版图设计过程中提高集成电路静电放电(ESD)防护能力的仿真方法,用于评估和控制ESD电流通路上的寄生电阻,辅助ESD防护设计,预估器件静电防护等级。详细介绍了仿真方法的原理和流程,以0.18μm SOI CMOS工艺制造的静态随机存储器电路为仿真和实验对象,应用此仿真方法,统计寄生电阻值,优化ESD防护设计,并进行ESD测试,记录未优化样品和优化样品的失效电压。通过对比寄生电阻和失效电压,证明降低寄生电阻可获得更好的ESD防护性能,而且器件失效电压和关键寄生电阻值R Vdd之间存在近似线性反比关系。展开更多
Recent studies have indicated that hypervelocity impacts by meteoroids and space debris can induce spacecraft anomalies. However, the basic physical process through which space debris impacts cause anomalies is not en...Recent studies have indicated that hypervelocity impacts by meteoroids and space debris can induce spacecraft anomalies. However, the basic physical process through which space debris impacts cause anomalies is not entirely clear. Currently, impact-generated plasma is thought to be the primary cause of electrical spacecraft anomalies, while the effects of impact-generated mechanical damage have rarely been researched. This paper presents new evidence showing that impact-generated mechanical damage strongly influences electrostatic discharge. Hypervelocity impact experiments were conducted in a plasma drag particle accelerator, using particles with diameters of 200–500 ?m and velocities of 2–7 km/s. The impact-generated mechanical damage on a specimen surface was measured by a stereoscopic microscope and 3D Profilometer and it indicated that microscopic irregularities around the impact crater could be responsible for local electric field enhancement. Furthermore, the influence of impact-generated mechanical damage on electrostatic discharge was simulated in an inverted potential gradient situation. The experimental results show that the electrostatic discharge voltage threshold was significantly reduced after the specimen was impacted by particles.展开更多
文摘为解决集成电路的全芯片静电防护设计中寄生电阻导致的防护空间压缩问题,提出了一种实用的能够在版图设计过程中提高集成电路静电放电(ESD)防护能力的仿真方法,用于评估和控制ESD电流通路上的寄生电阻,辅助ESD防护设计,预估器件静电防护等级。详细介绍了仿真方法的原理和流程,以0.18μm SOI CMOS工艺制造的静态随机存储器电路为仿真和实验对象,应用此仿真方法,统计寄生电阻值,优化ESD防护设计,并进行ESD测试,记录未优化样品和优化样品的失效电压。通过对比寄生电阻和失效电压,证明降低寄生电阻可获得更好的ESD防护性能,而且器件失效电压和关键寄生电阻值R Vdd之间存在近似线性反比关系。
文摘Recent studies have indicated that hypervelocity impacts by meteoroids and space debris can induce spacecraft anomalies. However, the basic physical process through which space debris impacts cause anomalies is not entirely clear. Currently, impact-generated plasma is thought to be the primary cause of electrical spacecraft anomalies, while the effects of impact-generated mechanical damage have rarely been researched. This paper presents new evidence showing that impact-generated mechanical damage strongly influences electrostatic discharge. Hypervelocity impact experiments were conducted in a plasma drag particle accelerator, using particles with diameters of 200–500 ?m and velocities of 2–7 km/s. The impact-generated mechanical damage on a specimen surface was measured by a stereoscopic microscope and 3D Profilometer and it indicated that microscopic irregularities around the impact crater could be responsible for local electric field enhancement. Furthermore, the influence of impact-generated mechanical damage on electrostatic discharge was simulated in an inverted potential gradient situation. The experimental results show that the electrostatic discharge voltage threshold was significantly reduced after the specimen was impacted by particles.
