A Schottky gate resonant tunneling transistor （SGRTT） is fabricated. Relying on simulation by ATLAS software,we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is gr...A Schottky gate resonant tunneling transistor （SGRTT） is fabricated. Relying on simulation by ATLAS software,we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is grounded and a positive bias voltage is applied to the collector terminal. When the collector terminal is grounded, the gate voltages can control the peak voltage. As revealed by measurement results, the reason is that the gate voltages and the electric field distribution on emitter and collector terminal change the distribution of the depletion region.展开更多
A RTD-based TSRAM cell is introduced.The mechanism of different types of access transistors in this cell is described and NMOS is found most suitable from consideration of the cell size and power consumption.The archi...A RTD-based TSRAM cell is introduced.The mechanism of different types of access transistors in this cell is described and NMOS is found most suitable from consideration of the cell size and power consumption.The architecture of a TSRAM system is presented.Simulation results show that the RTD-based TSRAM has advanced characteristics of small area,low power,and high speed.展开更多
A novel edge-triggered D-flip-flop based on a resonant tunneling diode （RTD） is proposed and used to construct a binary frequency divider. The design is discussed in detail and the performance of the circuit is veri...A novel edge-triggered D-flip-flop based on a resonant tunneling diode （RTD） is proposed and used to construct a binary frequency divider. The design is discussed in detail and the performance of the circuit is verified using SPICE. Relying on the nonlinear characteristics of RTD,we reduced the number of components used in our DFF circuit to only half of that required using conventional CMOS SCFL technology.展开更多
文摘A Schottky gate resonant tunneling transistor （SGRTT） is fabricated. Relying on simulation by ATLAS software,we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is grounded and a positive bias voltage is applied to the collector terminal. When the collector terminal is grounded, the gate voltages can control the peak voltage. As revealed by measurement results, the reason is that the gate voltages and the electric field distribution on emitter and collector terminal change the distribution of the depletion region.
文摘A RTD-based TSRAM cell is introduced.The mechanism of different types of access transistors in this cell is described and NMOS is found most suitable from consideration of the cell size and power consumption.The architecture of a TSRAM system is presented.Simulation results show that the RTD-based TSRAM has advanced characteristics of small area,low power,and high speed.
文摘A novel edge-triggered D-flip-flop based on a resonant tunneling diode （RTD） is proposed and used to construct a binary frequency divider. The design is discussed in detail and the performance of the circuit is verified using SPICE. Relying on the nonlinear characteristics of RTD,we reduced the number of components used in our DFF circuit to only half of that required using conventional CMOS SCFL technology.
