This paper presents a low noise, 1.25Gb/s and 124dBΩ front-end amplifier that is designed and fabricated in 0.25μm CMOS technology for optical communication applications. Active inductor shunt peaking technology and...This paper presents a low noise, 1.25Gb/s and 124dBΩ front-end amplifier that is designed and fabricated in 0.25μm CMOS technology for optical communication applications. Active inductor shunt peaking technology and noise optimization are used in the design of a trans-impedance amplifier,which overcomes the problem of inadequate bandwidth caused by the large parasitical capacitor of the CMOS photodiode. Experimental results indicate that with a parasitical capacitance of 2pF,this circuit works at 1.25Gb/s. A clear eye diagram is obtained with an input optical signal of - 17dBm. With a power supply of 3.3V, the front-end amplifier consumes 122mW and provides a 660mV differential output.展开更多
文摘This paper presents a low noise, 1.25Gb/s and 124dBΩ front-end amplifier that is designed and fabricated in 0.25μm CMOS technology for optical communication applications. Active inductor shunt peaking technology and noise optimization are used in the design of a trans-impedance amplifier,which overcomes the problem of inadequate bandwidth caused by the large parasitical capacitor of the CMOS photodiode. Experimental results indicate that with a parasitical capacitance of 2pF,this circuit works at 1.25Gb/s. A clear eye diagram is obtained with an input optical signal of - 17dBm. With a power supply of 3.3V, the front-end amplifier consumes 122mW and provides a 660mV differential output.
