We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded...We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure, which boosts the modulation efficiency compared with a single MOS capacitor. The simulation results demonstrate that the Vπ Lπ product is 2. 4V · cm. The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve, respectively,indicating a bandwidth of 8GHz. The phase shift efficiency and bandwidth can be enhanced by rib width scaling.展开更多
The equivalent refractive index（ERI） method is employed to analyze the function of the strip waveguide directional coupling modulator（SWM）. Through deducing the diagnostic equation of the Exmn mode of the four-lay...The equivalent refractive index（ERI） method is employed to analyze the function of the strip waveguide directional coupling modulator（SWM）. Through deducing the diagnostic equation of the Exmn mode of the four-layer media film waveguide equivalent to the SWM,the transmission constant of the symmetrical mode of the positive phase and negative one and the coupling length of powerful transference are obtained. The veracity of ERI is validated with the example of Ex11 basal mode under conditions of comparing the three results of ERI,EIM and Marcatili.展开更多
文摘We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure, which boosts the modulation efficiency compared with a single MOS capacitor. The simulation results demonstrate that the Vπ Lπ product is 2. 4V · cm. The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve, respectively,indicating a bandwidth of 8GHz. The phase shift efficiency and bandwidth can be enhanced by rib width scaling.
文摘The equivalent refractive index（ERI） method is employed to analyze the function of the strip waveguide directional coupling modulator（SWM）. Through deducing the diagnostic equation of the Exmn mode of the four-layer media film waveguide equivalent to the SWM,the transmission constant of the symmetrical mode of the positive phase and negative one and the coupling length of powerful transference are obtained. The veracity of ERI is validated with the example of Ex11 basal mode under conditions of comparing the three results of ERI,EIM and Marcatili.
