考虑输电线路安全的机械除冰次序优化

机械除冰是应对输电线路覆冰灾害的重要手段,现有研究主要集中在除冰方法的改进,而对机械除冰实施过程的影响研究较少。研究发现在机械除冰过程中,如果按照从输电线路一端开始顺序除冰的策略,杆塔承受的最大不平衡力可能超过设计标准,影响输电线路安全,而不同的除冰次序会产生不同的最大不平衡力。为此,有必要对机械除冰的除冰次序进行优化,提高机械除冰的安全性。首先分析了机械除冰过程中除冰次序对杆塔平衡力的影响,然后建立了输电线路机械除冰次序优化模型。由于该模型为非线性、多约束模型,采用遗传算法对不同档导线覆冰清除的次序进行优化。仿真分析表明,优化后的除冰次序能够有效地降低杆塔承受不平衡力,提高机械除冰过程中输电线路的安全性。

Effect of gas bubble on cell voltage oscillations based on equivalent circuit simulation in aluminum electrolysis cell

A method to investigate the effect of gas bubble on cell voltage oscillations was established. The whole aluminum electrolysis cell was treated as a resistance circuit, and the dynamic simulation of the cell equivalent circuit was modeled with Matlab/Simulink simulation software. The time-series signals of cell voltage and anode current were obtained under different bubble conditions, and analyzed by spectral and statistical analysis methods. The simulation results show that higher bubble release frequency has a significant effect on the cell voltage oscillations. When the bubble coverage of one anode block exceeds 80%, the cell voltage may exceed its normal fluctuation amplitude. The simulation also proves that the anode effect detected by computer in actual production is mainly the whole cell anode effect.

Cycle life prediction and match detection in retired electric vehicle batteries

The lifespan models of commercial 18650-type lithium ion batteries （nominal capacity of 1150 mA-h） were presented. The lifespan was extrapolated based on this model. The results indicate that the relationship of capacity retention and cycle number can be expressed by Gaussian function. The selecting function and optimal precision were verified through actual match detection and a range of alternating current impedance testing. The cycle life model with high precision （〉99%） is beneficial to shortening the orediction time and cutting the prediction cost.

Equivalent Circuit Analysis of an RF Integrated Inductor with Ferrite Thin-Film

An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyzed. Circuit element parameters are extracted from RF measurements. Compared with the reference air-core inductor without magnetic film, L and Q of the ferrite thin-film inductor are 17% and 40% higher at 2GHz,respectively. Both the equivalent circuit analysis and test results demonstrate significant enhancement of the performance of RF integration inductors by ferrite thin-film integration.

Non-Destructive Parameters Extraction for a Novel IGBT SPICE Model and Verified with Measurements

An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.

Small-Signal Equivalent Circuit Modeling of a Photodetector Chip

A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector＇s RF performance into consideration,is first determined based on the device＇s physical structure. The photodetector＇s S parameters are then on-wafer measured, and the measured raw data are processed with further calibration. A genetic algorithm is used to fit the measured data, thereby allowing us to calculate each parameter value of the model. Experimental resuits show that the modeled parameters are well matched to the measurements in a frequency range from 130MHz to 20GHz, and the proposed method is proved feasible. This model can give an exact description of the photodetector chip＇s high frequency performance,which enables an effective circuit-level prediction for photodetector and optoelectronic integrated circuits.

THE EQUIVALENT CIRCUIT AND CONTROL SYSTEM OF TRAVELLING WAVE TYPE ULTRASONIC MOTOR

The ultrasonic motor is a sort of new type of micromotor with special structure. By use of piezoelectric converse effect of ceramics, the electrical energy is transformed into mechanical energy. Its operating principle is quite different from that of the traditional motors. In this paper the equivalent circuits of the ring stator and even the whole motor are proposed after studying the equivalent circuit of piezoelectric vibrator. Then the paper makes detailed analyses of each part of the control system, which has been simplified by the equivalent circuit. The theory in this paper has been proved through experiments.

Abstraction of Small Signal Equivalent Circuit Parameters of Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT

An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/In-GaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEHEMT1 model of IC-CAP software. The extraction results are verified by ADS software,and the DC I-V curves and S parameters simulated by ADS are basically accordant with those of the test results. These results indicate that the EEHEMT1 model can be used for extracting the component parameters of an enhancement-mode PHEMT.

Electrode Location Efficiency and Equivalent Circuit for Flexure Vibration of Piezoelectric Beam

Aim To provide technical parameters for development of quartz gyro. Methods Theory of elastic beam was applied to piezoelectric beam. Based on the concept of equivalent volume force and energy conservation, the formula of electrode location efficiency was derived. And the electric system was compared with the dynamic one according to the principle of equivalent circuit for piezoelectric crystal, and the general formulae of the parameters for the equivalent circuit, R n L n C n , were derived. Results and Conclusion Optimum electrode location is chosen, and the derived equivalent circuit parameters are the theoretical base of the circuit design for quartz gyro.

A Frequency-Independent Equivalent Circuit for High-k Stacked Monolithic Transformers

A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model enables fast and accurate time domain transient analysis and noise analysis in RFIC simulation since all elements in the model are fre- quency independent. The validity of the proposed model has been demonstrated by a fabricated monolithic stacked trans- former in TSMC＇s 0.13μm mixed-signal （MS）/RF CMOS＇ process.

The Third-Order Intermodulation Distortion in the AlGaAs/GaAs HBT Amplifier

An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.

Design and Realization of CPW Circuits Using EC-ANN Models for CPW Discontinuities

Novel accurate and efficient equivalent circuit trained artificial neural-network （EC-ANN） models,which inherit and improve upon EC model and EM-ANN models＇ advantages,are developed for coplanar waveguide （CPW） discontinuities. Modeled discontinuities include ： CPW step, interdigital capacitor, symmetric cross junction, and spiral inductor, for which validation tests are performed. These models allow for circuit design, simulation, and optimization within a CAD simulator. Design and realization of a coplanar lumped element band pass filter on GaAs using the developed CPW EC-ANN models are demonstrated.

Lumped Equivalent Circuit of Planar Spiral Inductor for CMOS RFIC Application

A lumped π-type equivalent circuit of planar spiral inductor for CMOS RFIC application is developed by the domain decomposition method for conformal modules （DDM-CM）. Closed form expressions of lumped parameters for a square spiral inductor on a Si-SiO2 substrate are obtained and verified with the previously published experimental results.

Parameter Extraction for 2-π Equivalent Circuit Model of RF CMOS Spiral Inductors

A novel parameter extraction method with rational functions is presented for the 2-πequivalent circuit model of RF CMOS spiral inductors. The final S-parameters simulated by the circuit model closely match experimental data. The extraction strategy is straightforward and can be easily implemented as a CAD tool to model spiral inductors. The resulting circuit models will be very useful for RF circuit designers.

Comparison and Analysis of Two Microwave Equivalent-Circuit Models for Resonant Tunneling Diode

The distinction between two microwave equivalent-circuit models,quasi Esaki tunneling model (QETM) and quantum well injection transit model (QWITM),for the resonant tunneling diode (RTD) is discussed in details,and two groups of circuit parameters are extracted from experiment data by the least square fit method.Both theory analysis and the comparison of fit results demonstrate that QWITM is much more precise than QETM.In addition,the rationality of QWITM circuit's parameters confirms it too.On this basis,the resistive frequency is calculated,whose influence factors and improvement method are simply discussed as well.

Simulation of second-order RC equivalent circuit model of lithium battery based on variable resistance and capacitance

With the rise of the electric vehicle industry,as the power source of electric vehicles,lithium battery has become a research hotspot.The state of charge(SOC)estimation and modelling of lithium battery are studied in this paper.The ampere-hour(Ah)integration method based on external characteristics is analyzed,and the open-circuit voltage(OCV)method is studied.The two methods are combined to estimate SOC.Considering the accuracy and complexity of the model,the second-order RC equivalent circuit model of lithium battery is selected.Pulse discharge and exponential fitting of lithium battery are used to obtain corresponding parameters.The simulation is carried out by using fixed resistance capacitance and variable resistance capacitor respectively.The accuracy of variable resistance and capacitance model is 2.9%,which verifies the validity of the proposed model.

Analysis of substrate eddy effects and distribution effects in silicon-based inductor model

The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effects are captured. The substrate eddy influence factors of an inductor （6 turn, 3 060 μm in length） fabricated on low （ 1 Ω. cm） and high resistivity（ 1 000 Ω.cm） silicon substrates are 0. 3 and 0. 04, and the distribution-effects- occurring frequencies are 1.8 GHz and 14. 5 GHz, respectively. The measurement results show that the equivalent circuit model of the inductor on low resistivity silicon must take into consideration substrate eddy effects and distribution effects. However, the circuit model of the inductor on high resistivity silicon cannot take into account the substrate eddy effects and the distribution effects at the frequencies of interest. Its simple model shows agreement with the measurements, and the contrast is within 7%.

Surface nanostructure modification of Al substrates by N^+ ion implantation and their corrosion inhibition

The influence of implantation of N+ions of different energies on the nanostructure of7049Al substrates and the corrosioninhibition of produced Al samples in a3.5%NaCl solution was studied.The X-ray diffraction(XRD)results confirmed the formationof AlN as a result of N+ion implantation.The atomic force microscope(AFM)results showed that grains of larger scale are formedby increasing N+energy which can be due to heat accumulation in the sample during implantation causing higher rate of diffusion inthe sample,hence decreasing the number of defects.Corrosion resistance of the samples was studied by the electrochemicalimpedance spectroscopy(EIS)measurements.Results showed that corrosion resistance of implanted Al increases with increasing N+ion energy.The equivalent circuits for the N+implanted Al samples with different energies were obtained,using the EIS data whichshowed strong dependence of the equivalent circuit elements on the surface morphology of the samples.Finally,the relationshipbetween corrosion inhibition and equivalent circuit elements was investigated.

Similarity theory based method for MEMS dynamics analysis

A new method for MEMS dynamics analysis is presented,ased on the similarity theory. With this method, two systems' similarities can be captured in terms of physics quantities/governed-equations amongst different energy fields, and then the unknown dynamic characteristics of one of the systems can be analyzed according to the similar ones of the other system. The probability to establish a pair of similar systems among MEMS and other energy systems is also discussed based on the equivalent between mechanics and electrics, and then the feasibility of applying this method is proven by an example, in which the squeezed damping force in MEMS and the current of its equivalent circuit established by this method are compared.