In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes(GMAP) fabricated by silicon standard planar technology. Low dark count rates,neg...In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes(GMAP) fabricated by silicon standard planar technology. Low dark count rates,negligible afterpulsing effects,good timing resolution and high quantum detection efficiency in all the visible range have been measured. The very good electro-optical performances of our photodiodes make them attractive for the fabrication of arrays with a large number of GMAP to be used both in the commercial and the scientific fields,as telecommunications and nuclear medical imaging.展开更多
Based on the commercially available avalanche photodiodes, the basic needs of gated-mode operation for single photon are discussed. Gated-mode technique based on the experimental data for detection of single photon is...Based on the commercially available avalanche photodiodes, the basic needs of gated-mode operation for single photon are discussed. Gated-mode technique based on the experimental data for detection of single photon is analyzed at communication wavelengths so that the basic operation parameters can decide properly for efficient detection of single photon. The bias voltage has related to the punch-through voltage in combining the cooling technique with synchronization to decrease the dark counts.展开更多
A 320×240 CMOS image sensor is demonstrated,which is implemented by a standard 0.6 μm 2P2M CMOS process.For reducing the chip area,each 2×2-pixel block shares a sample/hold circuit,analog-to-digital convert...A 320×240 CMOS image sensor is demonstrated,which is implemented by a standard 0.6 μm 2P2M CMOS process.For reducing the chip area,each 2×2-pixel block shares a sample/hold circuit,analog-to-digital converter and 1-b memory.The 2×2 pixel pitch has an area of 40 μm×40 μm and the fill factor is about 16%.While operating at a low frame rate,the sensor dissipates a very low power by power-management circuit making pixel-level comparators in an idle state.A digital correlated double sampling,which eliminates fixed pattern noise,improves SNR of the sensor, and multiple sampling operations make the sensor have a wide dynamic range.展开更多
A high power and low distortion 1.31 μm AlGaInAs/InP multiquantum well distributed feedback laser diode (MQW DFB LD) with RWG structure has been developed by MOCVD technique. The fiber output power of butterfly packa...A high power and low distortion 1.31 μm AlGaInAs/InP multiquantum well distributed feedback laser diode (MQW DFB LD) with RWG structure has been developed by MOCVD technique. The fiber output power of butterfly packaged module with optic isolator P f is more than 10 mW, threshold current is in the range of (13～20) mA, slope efficiency, E s>0.30 W/A and side mode suppression ratio, R S,M,S >35 dB. The composite second order, O C,S <-61 dBc and composite triple beat, B C,T <-65 dBc are obtained by test frequencies of (45～550) MHz with 60 PAL channels. In the test conditions the carrier to noise ratio, R C,N >51 dB.展开更多
This paper presents a transition-mode zero-voltage-switching inverter for the cooker magnetron of household microwave ovens. The inverter drives a leakage transformer to generate the required high voltage and stabiliz...This paper presents a transition-mode zero-voltage-switching inverter for the cooker magnetron of household microwave ovens. The inverter drives a leakage transformer to generate the required high voltage and stabilized current. For achieving zero-voltage switching, a transition-mode driver L6561 is utilized to detect the ending of transformer resonance and drive an insulated-gate-bipolar-transistor. As transistor is conducted, rectified direct-current voltage drives the transformer. While transistor is cut off, transformer resonates with a parallel capacitor. Transistor conduction time and magnetron power are controlled with a 16-bit digital signal controller dsPIC30F4011. For widening the working range, transistor conduction time is set to be inversely changed with line-frequency input voltage. To demonstrate the analysis and design of this paper, a 1 kW inverter circuit is built. Experimental results show the feasibility and usefulness of the designed magnetron power supply.展开更多
A 2MeV thermionic cathode test stand was established to meet the requirement of the large area thermionic cathode system.A 100ram in diameter type'B'thermionic dispenser cathode was developed.A 1000A emission ...A 2MeV thermionic cathode test stand was established to meet the requirement of the large area thermionic cathode system.A 100ram in diameter type'B'thermionic dispenser cathode was developed.A 1000A emission current was produced at the voltage of the diode about 1.8MV,the pulse width about 90ns(FWHM),and the cathode temperature about 1350℃.The emission current density is 12A/cm^2.The results indicate that a large area thermionic cathode which produces high quality and high current electron beams is visible.The results also indicate that the ability of cathode emission relies on the diode-vacuum and cathode-temperature.展开更多
Buffer-modified C_(60)/pentacene as charge generation layer(CGL) is investigated to achieve effective performance of charge generation. Undoped green electroluminescent tandem organic light-emitting diodes(OLEDs) with...Buffer-modified C_(60)/pentacene as charge generation layer(CGL) is investigated to achieve effective performance of charge generation. Undoped green electroluminescent tandem organic light-emitting diodes(OLEDs) with multiple identical emissive units and using buffer-modified C_(60)/pentacene organic semiconductor heterojunction(OHJ) as CGL are demonstrated to exhibit better current density and brightness, compared with conventional single-unit devices. The current density and brightness both can be significantly improved with increasing the thickness of Al. However, excessive thickness of Al seriously decreases the transmittance of films and damages the interface. As a result, the maximum current efficiency of 1.43 cd·A^(-1) at 30 mA ·cm^(-2) can be achieved for tandem OLEDs with optimal thickness of Al. These results clearly demonstrate that Cs_2CO_3/Al is an effective buffer for C_(60)/pentacene-based tandem OLEDs.展开更多
文摘In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes(GMAP) fabricated by silicon standard planar technology. Low dark count rates,negligible afterpulsing effects,good timing resolution and high quantum detection efficiency in all the visible range have been measured. The very good electro-optical performances of our photodiodes make them attractive for the fabrication of arrays with a large number of GMAP to be used both in the commercial and the scientific fields,as telecommunications and nuclear medical imaging.
基金National"973"Project(G2001039302) Key S & T Project of Guangdong Province(2003A103405) Key S&T Project of Guangzhou City(1992-2-035-01)
文摘Based on the commercially available avalanche photodiodes, the basic needs of gated-mode operation for single photon are discussed. Gated-mode technique based on the experimental data for detection of single photon is analyzed at communication wavelengths so that the basic operation parameters can decide properly for efficient detection of single photon. The bias voltage has related to the punch-through voltage in combining the cooling technique with synchronization to decrease the dark counts.
文摘A 320×240 CMOS image sensor is demonstrated,which is implemented by a standard 0.6 μm 2P2M CMOS process.For reducing the chip area,each 2×2-pixel block shares a sample/hold circuit,analog-to-digital converter and 1-b memory.The 2×2 pixel pitch has an area of 40 μm×40 μm and the fill factor is about 16%.While operating at a low frame rate,the sensor dissipates a very low power by power-management circuit making pixel-level comparators in an idle state.A digital correlated double sampling,which eliminates fixed pattern noise,improves SNR of the sensor, and multiple sampling operations make the sensor have a wide dynamic range.
文摘A high power and low distortion 1.31 μm AlGaInAs/InP multiquantum well distributed feedback laser diode (MQW DFB LD) with RWG structure has been developed by MOCVD technique. The fiber output power of butterfly packaged module with optic isolator P f is more than 10 mW, threshold current is in the range of (13～20) mA, slope efficiency, E s>0.30 W/A and side mode suppression ratio, R S,M,S >35 dB. The composite second order, O C,S <-61 dBc and composite triple beat, B C,T <-65 dBc are obtained by test frequencies of (45～550) MHz with 60 PAL channels. In the test conditions the carrier to noise ratio, R C,N >51 dB.
文摘This paper presents a transition-mode zero-voltage-switching inverter for the cooker magnetron of household microwave ovens. The inverter drives a leakage transformer to generate the required high voltage and stabilized current. For achieving zero-voltage switching, a transition-mode driver L6561 is utilized to detect the ending of transformer resonance and drive an insulated-gate-bipolar-transistor. As transistor is conducted, rectified direct-current voltage drives the transformer. While transistor is cut off, transformer resonates with a parallel capacitor. Transistor conduction time and magnetron power are controlled with a 16-bit digital signal controller dsPIC30F4011. For widening the working range, transistor conduction time is set to be inversely changed with line-frequency input voltage. To demonstrate the analysis and design of this paper, a 1 kW inverter circuit is built. Experimental results show the feasibility and usefulness of the designed magnetron power supply.
文摘A 2MeV thermionic cathode test stand was established to meet the requirement of the large area thermionic cathode system.A 100ram in diameter type'B'thermionic dispenser cathode was developed.A 1000A emission current was produced at the voltage of the diode about 1.8MV,the pulse width about 90ns(FWHM),and the cathode temperature about 1350℃.The emission current density is 12A/cm^2.The results indicate that a large area thermionic cathode which produces high quality and high current electron beams is visible.The results also indicate that the ability of cathode emission relies on the diode-vacuum and cathode-temperature.
基金supported by the National Nature Science Foundation of China(No.61604027)the Scientific and Technological Research Foundation of Chongqing Municipal Education Commission(Nos.KJ1400411 and KJ1600439),the Scientific and Technological Research Foundation of Chongqing Municipal Education Commission(No.KJ1500404)+1 种基金the Youth Natural Science Foundation of Chongqing University of Posts and Telecommunications(No.A2013-39)the Basic and Advanced Technology Research Project of Chongqing Municipality(No.cstc2016jcyA 1923)
文摘Buffer-modified C_(60)/pentacene as charge generation layer(CGL) is investigated to achieve effective performance of charge generation. Undoped green electroluminescent tandem organic light-emitting diodes(OLEDs) with multiple identical emissive units and using buffer-modified C_(60)/pentacene organic semiconductor heterojunction(OHJ) as CGL are demonstrated to exhibit better current density and brightness, compared with conventional single-unit devices. The current density and brightness both can be significantly improved with increasing the thickness of Al. However, excessive thickness of Al seriously decreases the transmittance of films and damages the interface. As a result, the maximum current efficiency of 1.43 cd·A^(-1) at 30 mA ·cm^(-2) can be achieved for tandem OLEDs with optimal thickness of Al. These results clearly demonstrate that Cs_2CO_3/Al is an effective buffer for C_(60)/pentacene-based tandem OLEDs.
