夫兰克-赫兹实验中管极电压对实验曲线影响的研究

针对夫兰克-赫兹实验中测量曲线易受各管极电压影响的问题,通过独立改变各管极电压的方法进行了数据测量,并分别就灯丝电压UF、第一栅极电压UG1K、拒斥电压UG2A对实验曲线的影响进行了分析讨论,得到了一些有价值的规律。此外,还对IA—UG2K曲线中出现的"台阶现象"、"双谷现象"进行合理的解释。

Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs

The alloy temperature dependence of Voffset and Rcontact is studied, and an optimal alloy temperature range for the best trade-off between Voffset and Rcontact, is given for thin base HBTs. In addition,the reason for the high Voffset at high alloy temperature is interpreted using Schottky clamped theory. The lower Voffset of our U-shaped emitter HBT than that of traditional strip emitter HBTs is explained.

A monolithic InGaP/GaAs HBT power amplifier for W-CDMA applications

A monolithic microwave integrated circuit （MMIC） power amplifier （PA） is proposed. It adopts a new on-chip bias circuit, which not only avoids the instability of the direct current bias caused by the change in the power supply and temperature, but also compensates deviations caused by the increase in input power. The bias circuit is a current-mirror configuration, and the feedback circuit helps to maintain bias voltage at a constant level. The gain of the feedback circuit is improved by the addition of a non-inverting amplifier within the feedback circuit. A shunt capacitor at the base node of the active bias transistor enhances the linearity of the PA. The chip is fabricated in an InGaP/GaAs heterojunction bipolar transistor （HBT） process. Measured results exhibit a 26. 6-dBm output compression point, 33.6% power-added efficiency （PAE） and - 40.2 dBc adjacent channel power ratio （ACPR） for wide-band code division multiple access （W-CDMA） applications.

Development of OPTO-LDR coupled timer based voltage to frequency converter

This paper describes the development of a timer based voltage to frequency converter(V FC).Timer LM555is used in astable multivibrator mode with two OPTO-LDRs(light dependent resistors)in the circuitry.The frequency of timer output waveform which is measured using a digital storage oscillator(DSO)is almost linearly proportional to the applied input voltage.Hence we obtain a linear relationship between the frequency of timer output waveform and the input voltage.Because of its quasi-digital output,the main advantages of this developed converter are linear input-output relationship,small size,easy portabilityand high cost performance.In addition,the timer output waveform can be directly interfaced with personal computer or microprocessor/microcontroller for further processing of the input voltage signal without intervening any analog-to-digital converter(ADC).

Design and Fabrication of Novel Dual-Base Negative-Differential-Resistance Heterojunction Bipolar Transistor

Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunc- tion bipolar transistor ( HBT) is designed and fabricated. Molecule beam extension. selective wet chemical etching, common contact photolithography and metal lift-off technique are adopted in the process. The device has particular and distinct voltage-controlled negative differential resistance (NDR) and photo-controlled NDR. The highest peak-to-vally current rate of the voltage-controlled NDR is larger than 148 and the peak current varies with the increase of collector voltage. The device features high speed and high frequency characteristics derived from HBT and intrinsic bistability and self-latching characteristics due to NDR. A single dual-base HBT can be seen as an integration of NDR device, HBT and photoconductive device. Compared with common HBT.the groove is the key factor producing NDR.

Double-gate tunnel field-effect transistor:Gate threshold voltage modeling and extraction

The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.

Power management unit chip design for automobile active-matrix organic light-emitting diode display module

A power management unit （PMU） chip supplying dual panel supply voltage, which has a low electro-magnetic interference （EMI） characteristic and is favorable for miniaturization, is designed. A two-phase charge pump circuit using external pumping capacitor increases its pumping current and works out the charge-loss problem by using bulk-potential biasing circuit. A low-power start-up circuit is also proposed to reduce the power consumption of the band-gap reference voltage generator. And the ring oscillator used in the ELVSS power circuit is designed with logic devices by supplying the logic power supply to reduce the layout area. The PMU chip is designed with MagnaChip＇s 0.25 μ high-voltage process. The driving currents of ELVDD and ELVSS are more than 50 mA when a SPICE simulation is done.

Testing Performance of Low Voltage Arresters

Due to important consideration of protection against lightning surge on electrical, electronic and telecommunication equipment, it was necessary to carry out a special study to look at the performance of protective devices. The study was testing performance of arresters on low voltage system. The activity was testing of arresters using steady state and impulse voltages. The arresters consisted of gas tube, zener diode, varistor and spark gap arresters, then it was made a cascade circuit between the varistor and spark gap arresters with a decoupling element. The decoupling elements were used air, iron and ferrite. The test yielded data of current and voltage on the tables and oscilloscope waveforms. The arresters had cut voltages early different from each other, namely the gas tube, zener diode, spark gap and varistor arresters were at the voltages of 500 V, 250 V, 1,000 V and 565 V respectively. The iron core decoupling element cascade circuit had the least oscillation among remaining cores.

Electrical Characterization of Semiconductor Diode Using Alternating Signal Measurements at Forward Bias

The general analysis of the forward AC behavior of a semiconductor diode under series mode is pre- sented for the first time.A new method without any particular assumption to characterize a diode was developed. This method can accurately measure the dependence of series resistance, junction capacitance, junction vol- tage, ideality factor, and interfacial layer impedance on forward biases. The measurements confirm that the ne- gative capacitance (NC) of Schottky diode is an effect of the junction, and the interfacial layer can be consi- dered as a layer structure with nonlinear resistance and capacitance.

On the MOSFET-Based Temperature Sensitive Element for Bolometer Application

This paper focuses on the study of thermal performances of MOS （metal-oxide-semiconductor） transistors for uncooled infrared bolometer applications. Such devices can be used in various applications both military and civil, such as defence and security, medical applications, industrial surveillance, etc. Series of measurements were conducted to obtain TCC （temperature coefficient of current） versus gate voltage and temperature curves. The TCC is a figure of merit for a device used as the sensitive element in a bolometer that represents its sensitivity to temperature and as such is a good indicator of the detector attainable performance. The measurements were confronted to Atlas simulations, and showed that in the subthreshold region the TCC ranges from 4%/K all the way to 9%/K which represents a great improvement compared to state of the art thermistor bolometers. Analytic expressions of the TCC are also derived from current equations of the MOSFET （MOS field effect transistor） drain current to help understanding the effect of drain to source voltage, mobility, temperature and threshold voltage sensibility to temperature, in all three operation modes of the transistor （subthreshold, ohmic and saturation）. It was also determined that gate length does not have an influence on the TCC until short channel effects are factored in.

Flexible thermocells for utilization of body heat

Plastic thermo-electrochemical ceils （thermocells） involving aqueous potassium ferricyanide/ferrocyanide electrolyte have been investigated as an alternative to conventional thermoelectrics for thermal energy harvesting. Plastic thermocells that consist of all pliable materials such as polyethylene terephthalate （PET）, fabrics, and wires are flexible enough to be wearable on the human body and to be wrapped around cylindrical shapes. The performance of the thermocells is enhanced by incorporating carbon nanotubes into activated carbon textiles, due to improved charge transfer at the interface. In cold weather conditions （a surrounding temperature of 5 ℃）, the thermocell generates a short-circuit current density of 0.39 A/m2 and maximum power density of 0.46 mW/m2 from body heat （temperature of 36℃）. For practical use, we have shown that the thermocell charges up a capacitor when worn on a T-shirt by a person. We also have demonstrated that the electrical energy generated from waste pipe heat using a serial array of the thermocells and voltage converters can power a typical commercial light emitting diode （LED）.

Carbon nanotube-polypyrrole core-shell sponge and its application as highly compressible supercapacitor electrode

A carbon nanotube （CNT） sponge contains a three-dimensional conductive nano- tube network, and can be used as a porous electrode for various energy devices. We present here a rational strategy to fabricate a unique CNT@polypyrrole （PPy） core-shell sponge, and demonstrate its application as a highly compressible supercapacitor electrode with high performance. A PPy layer with optimal thickness was coated uniformly on individual CNTs and inter-CNT contact points by electrochemical deposition and crosslinking of pyrrole monomers, resulting in a core-shell configuration. The PPy coating significantly improves specific capacitance of the CNT sponge to above 300 F/g, and simultaneously reinforces the porous structure to achieve better strength and fully elastic structural recovery after compression. The CNT@PPy sponge can sustain 1,000 compression cycles at a strain of 50% while maintaining a stable capacitance （〉 90% of initial value）. Our CNT@PPy core-shell sponges with a highly porous network structure may serve as compressible, robust electrodes for supercapacitors and many other energy devices.

Stable single-photon detection based on Si-avalanche photodiode in a large temperature variation range

In this paper, we present a stable single-photon detection method based on Si-avalanche photodiode(Si-APD) operating in Geiger mode with a large temperature variation range. By accurate temperature sensing and direct current(DC) bias voltage compensation, the single-photon detector can work stably in Geiger mode from-40 °C to 35 °C with an almost constant avalanche gain. It provides a solution for single-photon detection at outdoor operation in all-weather conditions.

Effects of transparent MPTMS/Ag/MoO_3 structure as anode on the performance of green organic light-emitting diodes

A transparent 3-mercaptopropyl trimethoxysilane(MPTMS)/Ag/MoO3 composite anode is introduced to fabricate green organic light-emitting diodes(OLEDs). Effects of the composite anode on brightness and operating voltage of OLEDs are researched. By optimizing the thickness of each layer of the MPTMS/Ag/MoO3 structure, the transmittance of MPTMS/Ag(8 nm)/Mo O3(30 nm) reaches over 75% at about 520 nm. The sheet resistance is 3.78 ?/□, corresponding to this MPTMS/Ag(8 nm)/MoO3(30 nm) structure. For the OLEDs with the optimized anode, the maximum electroluminescence(EL) current efficiency reaches 4.5 cd/A, and the maximum brightness is 37 036 cd/m2. Moreover, the OLEDs with the optimized anode exhibit a very low operating voltage(2.6 V) for obtaining brightness of 100 cd/m2. We consider that the improved device performance is mainly attributed to the enhanced hole injection resulting from the reduced hole injection barrier height. Our results indicate that employing the MPTMS/Ag/MoO3 as a composite anode can be a simple and promising technique in the fabrication of low-operating voltage and high-brightness OLEDs.