According to the general tendency of the development of enterprise cultural in the 21st century, more and more intense attentions will be paid on the enterprise culture. Thus, while the world green tendency and the gr...According to the general tendency of the development of enterprise cultural in the 21st century, more and more intense attentions will be paid on the enterprise culture. Thus, while the world green tendency and the green demand rise increasingly, the research on the green cultural management is becoming more important. The study of the green cultural management is not only of vital significance in promoting the continuous development of social economy, but also exchanging the way of the economic growth from extensive pattern to intensive pattern, improving the capacity of the competition and economic benefit of the company, and accelerating the international business. Moreover, the research has another significant importance in enriching and developing the science of enterprise of management.展开更多
We explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric ...We explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (-10s), low drain-induced barrier lowering (-30 mV) and low subthreshold swing (-80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (-148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications.展开更多
文摘According to the general tendency of the development of enterprise cultural in the 21st century, more and more intense attentions will be paid on the enterprise culture. Thus, while the world green tendency and the green demand rise increasingly, the research on the green cultural management is becoming more important. The study of the green cultural management is not only of vital significance in promoting the continuous development of social economy, but also exchanging the way of the economic growth from extensive pattern to intensive pattern, improving the capacity of the competition and economic benefit of the company, and accelerating the international business. Moreover, the research has another significant importance in enriching and developing the science of enterprise of management.
基金The authors acknowledge H. Ahmad and Y. -S. Shin for graphics assistance. This work was funded by the National Science Foundation under Grant CCF-0541461 and the Department of Energy (DE-FG02-04ER46175). D. Tham gratefully acknowledges support by the KAUST Scholar Award.
文摘We explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (-10s), low drain-induced barrier lowering (-30 mV) and low subthreshold swing (-80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (-148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications.