The past decade has witnessed a huge increase in the number of proposed middleware solutions for robotic fleets operating in unstructured environments. As a result, it has become difficult to decide which middleware i...The past decade has witnessed a huge increase in the number of proposed middleware solutions for robotic fleets operating in unstructured environments. As a result, it has become difficult to decide which middleware is the most appropriate for a specific application or application domain. In this paper we first extract a set of common and specific challenges that middlewares address, and group them according to the source domain they have originated within. These challenges are derived from a specific precision agriculture use-case based on the robotic fleet for weed control elaborated within the European project RHEA-robot fleets for highly effective agriculture and forestry management. Furthermore, the paper provides an analysis of a number of different middlewares and suggests a set of criteria for systemizing representative solutions. The aim of this analysis is to assist the process of finding an adequate middleware for a specific application domain.展开更多
We explore 10-nm wide Si nanowire （SiNW） field-effect transistors （FETs） for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric ...We explore 10-nm wide Si nanowire （SiNW） field-effect transistors （FETs） for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio （-10s）, low drain-induced barrier lowering （-30 mV） and low subthreshold swing （-80 mV/decade）. The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain （-148） reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications.展开更多
文摘The past decade has witnessed a huge increase in the number of proposed middleware solutions for robotic fleets operating in unstructured environments. As a result, it has become difficult to decide which middleware is the most appropriate for a specific application or application domain. In this paper we first extract a set of common and specific challenges that middlewares address, and group them according to the source domain they have originated within. These challenges are derived from a specific precision agriculture use-case based on the robotic fleet for weed control elaborated within the European project RHEA-robot fleets for highly effective agriculture and forestry management. Furthermore, the paper provides an analysis of a number of different middlewares and suggests a set of criteria for systemizing representative solutions. The aim of this analysis is to assist the process of finding an adequate middleware for a specific application domain.
基金The authors acknowledge H. Ahmad and Y. -S. Shin for graphics assistance. This work was funded by the National Science Foundation under Grant CCF-0541461 and the Department of Energy （DE-FG02-04ER46175）. D. Tham gratefully acknowledges support by the KAUST Scholar Award.
文摘We explore 10-nm wide Si nanowire （SiNW） field-effect transistors （FETs） for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio （-10s）, low drain-induced barrier lowering （-30 mV） and low subthreshold swing （-80 mV/decade）. The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain （-148） reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications.
