A ZnO micro/nanowire has been utilized to fabricate Schottky-contacted humidity sensors based on a metal-semiconductor-metal （M-S-M） structure. By means of the piezotronic effect, the signal level, sensitivity and s...A ZnO micro/nanowire has been utilized to fabricate Schottky-contacted humidity sensors based on a metal-semiconductor-metal （M-S-M） structure. By means of the piezotronic effect, the signal level, sensitivity and sensing resolution of the humidity sensor were significantly enhanced when applying an external strain. Since a higher Schottky barrier markedly reduces the signal level, while a lower Schottky barrier decreases the sensor sensitivity due to increased ohmic transport, a 0.22% compressive strain was found to optimize the performance of the humidity sensor, with the largest responsivity being 1,240%. The physical mechanism behind the observed mechanical-electrical behavior was carefully studied by using band structure diagrams. This work provides a promising way to significantly enhance the overall performance of a Schottky-contact structured micro/nanowire sensor.展开更多
A memristor that can emulate biological synapses is a promising basic-processing unit in neural-network computation. Here we propose a new-conceptual memristor based on a memoristive interface composed of two types of...A memristor that can emulate biological synapses is a promising basic-processing unit in neural-network computation. Here we propose a new-conceptual memristor based on a memoristive interface composed of two types of non-memristive materials, successfully realizing continuously tunable resistance controlled by both voltage （current） and applied time of a single pulse with a swift response comparable with synapses. The brain-like memorizing capability of the memristor is demonstrated. The memoristive mechanism in the interface is thought to be dominated by a Schottky barrier tuned by the capture/release of the carriers in interface traps with dispersive energy.展开更多
We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used...We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 106. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 gA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel arra36 the yield of functioning transistors is dramatically increased and device- to-device variability is reduced compared to single devices. This new nanowire- based platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes （LEDs）, while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.展开更多
We demonstrate a pH sensor based on ultrasensitive nanosize Schottky junctions formed within bottom-up grown dopant-flee arrays of assembled silicon nanowires. A new measurement concept relying on a continuous gate sw...We demonstrate a pH sensor based on ultrasensitive nanosize Schottky junctions formed within bottom-up grown dopant-flee arrays of assembled silicon nanowires. A new measurement concept relying on a continuous gate sweep is presented, which allows the straightforward determination of the point of maximum sensitivity of the device and allows sensing experiments to be performed in the optimum regime. Integration of devices into a portable fluidic system and an electrode isolation strategy affords a stable environment and enables long time robust FET sensing measurements in a liquid environment to be carried out. Investigations of the physical and chemical sensitivity of our devices at different pH values and a comparison with theoretical limits are also discussed. We believe that such a combination of nanofabrication and engineering advances makes this Schottky barrier-powered silicon nanowire lab-on-a-chip platform suitable for efficient biodetection and even for more complex biochemical analysis.展开更多
文摘A ZnO micro/nanowire has been utilized to fabricate Schottky-contacted humidity sensors based on a metal-semiconductor-metal （M-S-M） structure. By means of the piezotronic effect, the signal level, sensitivity and sensing resolution of the humidity sensor were significantly enhanced when applying an external strain. Since a higher Schottky barrier markedly reduces the signal level, while a lower Schottky barrier decreases the sensor sensitivity due to increased ohmic transport, a 0.22% compressive strain was found to optimize the performance of the humidity sensor, with the largest responsivity being 1,240%. The physical mechanism behind the observed mechanical-electrical behavior was carefully studied by using band structure diagrams. This work provides a promising way to significantly enhance the overall performance of a Schottky-contact structured micro/nanowire sensor.
文摘A memristor that can emulate biological synapses is a promising basic-processing unit in neural-network computation. Here we propose a new-conceptual memristor based on a memoristive interface composed of two types of non-memristive materials, successfully realizing continuously tunable resistance controlled by both voltage （current） and applied time of a single pulse with a swift response comparable with synapses. The brain-like memorizing capability of the memristor is demonstrated. The memoristive mechanism in the interface is thought to be dominated by a Schottky barrier tuned by the capture/release of the carriers in interface traps with dispersive energy.
文摘We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 106. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 gA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel arra36 the yield of functioning transistors is dramatically increased and device- to-device variability is reduced compared to single devices. This new nanowire- based platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes （LEDs）, while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.
文摘We demonstrate a pH sensor based on ultrasensitive nanosize Schottky junctions formed within bottom-up grown dopant-flee arrays of assembled silicon nanowires. A new measurement concept relying on a continuous gate sweep is presented, which allows the straightforward determination of the point of maximum sensitivity of the device and allows sensing experiments to be performed in the optimum regime. Integration of devices into a portable fluidic system and an electrode isolation strategy affords a stable environment and enables long time robust FET sensing measurements in a liquid environment to be carried out. Investigations of the physical and chemical sensitivity of our devices at different pH values and a comparison with theoretical limits are also discussed. We believe that such a combination of nanofabrication and engineering advances makes this Schottky barrier-powered silicon nanowire lab-on-a-chip platform suitable for efficient biodetection and even for more complex biochemical analysis.
