The I-V characteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperatu...The I-V characteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperature. The maximum ideality factor is 2.14 at 100 ℃, which declines above 100 ℃, and the minimum ideality factor is 1.26 at 300 ℃. The coefficient of forward voltage vs. temperature is -1.97 mV/℃ with a forward current of 1 mA. Based on double injection model, the deep lying impurity activation energy in the i-region is 0.1 343 eV.展开更多
文摘The I-V characteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperature. The maximum ideality factor is 2.14 at 100 ℃, which declines above 100 ℃, and the minimum ideality factor is 1.26 at 300 ℃. The coefficient of forward voltage vs. temperature is -1.97 mV/℃ with a forward current of 1 mA. Based on double injection model, the deep lying impurity activation energy in the i-region is 0.1 343 eV.
