TN366 2001064097激光粒度仪光电探测器自动对中系统=Automaticcentering systems of photodetector in laser particlesize analyzers[刊,中]/张晓辉,陈兴梧(天津大学精仪学院.天津(300072))∥2000年青年光学学术讨论会暨院士报告会....TN366 2001064097激光粒度仪光电探测器自动对中系统=Automaticcentering systems of photodetector in laser particlesize analyzers[刊,中]/张晓辉,陈兴梧(天津大学精仪学院.天津(300072))∥2000年青年光学学术讨论会暨院士报告会.—广东深圳,2000.10.展开更多
We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering.Optical and structural properties o...We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering.Optical and structural properties of the thin films were characterized using various techniques.At 6 V bias,a responsivity higher than 4 A/W in the wavelength shorter than 350 nm was obtained,and this responsibility dropped quickly and reached the noise floor in the visible region.Transient response measurement revealed that the detector had a fast photoresponse with a rise time of 9 ns and a fall time of 1.2 μs.展开更多
文摘TN366 2001064097激光粒度仪光电探测器自动对中系统=Automaticcentering systems of photodetector in laser particlesize analyzers[刊,中]/张晓辉,陈兴梧(天津大学精仪学院.天津(300072))∥2000年青年光学学术讨论会暨院士报告会.—广东深圳,2000.10.
基金supported by the National Natural Science Foundation of China (Grant No.50972007)the Beijing Municipal Natural Science Foundation (Grant No.4092035)+3 种基金the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No.2011CB932703)the Special Items Fund of Beijing Municipal Commission of Educationthe Opened Fund of State Key Laboratory on Integrated Optoelectronicsthe National Science Fund for Distinguished Young Scholars (Grant No.60825407)
文摘We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering.Optical and structural properties of the thin films were characterized using various techniques.At 6 V bias,a responsivity higher than 4 A/W in the wavelength shorter than 350 nm was obtained,and this responsibility dropped quickly and reached the noise floor in the visible region.Transient response measurement revealed that the detector had a fast photoresponse with a rise time of 9 ns and a fall time of 1.2 μs.
