A novel lateral Si 0 7 Ge 0.3 /Si p i n photodetector which is suitable for high speed operation with low voltage and at 0 7～1 1μm wavelengths is demonstrated.The fabrication of the device is carried ...A novel lateral Si 0 7 Ge 0.3 /Si p i n photodetector which is suitable for high speed operation with low voltage and at 0 7～1 1μm wavelengths is demonstrated.The fabrication of the device is carried out on a SOI substrate by using a UHV/CVD SiGe/Si heteroepitaxy technology and a CMOS/SOI process.Biased at 3 0V,the photodetector attained a responsivity of 0 38A/W at its peak response wavelength 0 93μm and exhibited extremely low dark current of less than 1nA,small parasitic capacitance of less than 1 0pF,and short rise time of 2 5ns.The distinct characteristics and process compatibility make it applicable to integrate the photodetector with other silicon based devices to meet the needs of high speed near infrared signal detections.展开更多
In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaA...In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.展开更多
In the infrared spectrum absorbed type gas concentration sensor,voltage signal obtained from the two-channel thermopile infrared detector TPS2534 is very weak.In order to solve this problem,the authors have establishe...In the infrared spectrum absorbed type gas concentration sensor,voltage signal obtained from the two-channel thermopile infrared detector TPS2534 is very weak.In order to solve this problem,the authors have established the structure of the sensor and designed weak signal detecting circuit of the sensor based on infrared spectrum absorption principle,differential de-noising principle and weak signal detecting principle.The authors have made experiments using CH4 gas.The results show that the circuit can remove noise effectively and detect weak electrical signal obtained from the detector.展开更多
An optical readout uncooled infrared （IR） imaging detector of bimaterial cantilever array using knife-edge filter operation （KEFO） is demonstrated. The angle change of each cantilever in a focal plane array （FPA...An optical readout uncooled infrared （IR） imaging detector of bimaterial cantilever array using knife-edge filter operation （KEFO） is demonstrated. The angle change of each cantilever in a focal plane array （FPA） can be simultaneously detected with a resolution of 10.5 degree. A deformation magnifying substrate-free micro-cantilever unit with multi-fold interval metaUized legs is specially designed and modeled. A FPA with 160×160 pixels is fabricated and thermal images with noise equivalent temperature difference （NETD） of 400 mK are obtained by this imaging detector.展开更多
The fluorescence quenching of inclusion complex of neutral red （NR） and hydroxypropyl-β-cyclodextrin （HP-β-CD） carried by chlorobenzene was investigated. The fluorescence intensity of NR increased due to the for...The fluorescence quenching of inclusion complex of neutral red （NR） and hydroxypropyl-β-cyclodextrin （HP-β-CD） carried by chlorobenzene was investigated. The fluorescence intensity of NR increased due to the formed inclusion complex of HP-β-CD and NR. But the fluorescence intensity of NR-HP-β-CD diminished when chlorobenzene was added, and there was a linear relationship between the fluorescence quenching value of the system （△IF = IF, NR-HP-β-CD - IF, CB-NB-NR-HP-β-CD） and the concentration of chlorobenzene. Based on this, a novel fluorescence quenching method for the determination of chlorobenzene with NR as a fluorescence probe has been developed. Under the optimal conditions, the linear range of calibration curve for the determination of chlorobenzene was 5.0 × 10^-8 - 8.0 × 10^-6 mol/L and the detection limit was 1.0 × 10^-8 mol/L. It has been applied to determination ofchlorobenzene in synthetic waste water samples with satisfactory results.展开更多
For non-destructive optical characterization, laser beam induced current(LBIC) microscopy has been developed into as a quantitative tool to examine individual photodiodes within a large pixel array. Two-dimensional LB...For non-destructive optical characterization, laser beam induced current(LBIC) microscopy has been developed into as a quantitative tool to examine individual photodiodes within a large pixel array. Two-dimensional LBIC microscopy, also generally called photocurrent mapping(PC mapping), can provide spatially resolved information about local electrical properties and p-n junction formation in photovoltaic infrared(including visible light) photodetectors from which it is possible to extract material and device parameters such as junction area, junction depth, diffusion length, leakage current position and minority carrier diffusion length etc. This paper presents a comprehensive review of research background, operating principle, fundamental issues, and applications of LBIC or PC mapping.展开更多
Multifunctional devices are of great interest for integration and miniaturization on the same platform, but simple addition of functionalities would lead to excessively large devices. Here, the photodetection and chem...Multifunctional devices are of great interest for integration and miniaturization on the same platform, but simple addition of functionalities would lead to excessively large devices. Here, the photodetection and chemical sensing device is developed based on two-dimensional(2D) glassygraphene that meets similar property requirements for the two functionalities. An appropriate bandgap arising from the distorted lattice structure enables glassy graphene to exhibit comparable or even improved photodetection and chemical sensing capability, compared with pristine graphene. Due to strong interactions between glassy graphene and the ambient atmosphere, the devices are less sensitive to photoinduced desorption than the ones based on graphene. Consequently,the few-layer glassy graphene device delivers positive photoresponse, with a responsivity of 0.22 A W^(-1) and specific detectivity reaching ~10^(10) Jones under 405 nm illumination.Moreover, the intrinsic defects and strain in glassy graphene can enhance the adsorption of analytes, leading to high chemical sensing performance. Specifically, the extracted signalto-noise-ratio of the glassy graphene device for detecting acetone is 48, representing more than 50% improvement over the device based on graphene. Additionally, bias-voltage-and thickness-dependent volatile organic compound(VOC) sensing features are identified, indicating the few-layer glassy graphene is more sensitive. This study successfully demonstrates the potential of glassy graphene for integrated photodetection and chemical sensing, providing a promising solution for multifunctional applications further beyond.展开更多
In the present work,a nanoporous ZnO/n-Si structure has been proposed as a new type infrared photodetector.Triggered by one laser pulse with wavelength of 1064 nm,this structure exhibits a double-peak decay of transie...In the present work,a nanoporous ZnO/n-Si structure has been proposed as a new type infrared photodetector.Triggered by one laser pulse with wavelength of 1064 nm,this structure exhibits a double-peak decay of transient photovoltage.Also,the time interval between these two peaks increases linearly with the increase of irradiated pulsed energy,indicating the promising application of this hetero-junction in photo-energy detection of infrared pulsed laser.A possible mechanism for this particular photoresponse has been discussed.展开更多
文摘A novel lateral Si 0 7 Ge 0.3 /Si p i n photodetector which is suitable for high speed operation with low voltage and at 0 7～1 1μm wavelengths is demonstrated.The fabrication of the device is carried out on a SOI substrate by using a UHV/CVD SiGe/Si heteroepitaxy technology and a CMOS/SOI process.Biased at 3 0V,the photodetector attained a responsivity of 0 38A/W at its peak response wavelength 0 93μm and exhibited extremely low dark current of less than 1nA,small parasitic capacitance of less than 1 0pF,and short rise time of 2 5ns.The distinct characteristics and process compatibility make it applicable to integrate the photodetector with other silicon based devices to meet the needs of high speed near infrared signal detections.
基金supported by the National Natural Science Foundation of China(No.61575059,No.61675062,No.21501038)the Fundamental Research Funds for the Central Universities(No.JZ2018HGPB0275,No.JZ2018HGTA0220,and No.JZ2018HGXC0001).
文摘In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.
文摘In the infrared spectrum absorbed type gas concentration sensor,voltage signal obtained from the two-channel thermopile infrared detector TPS2534 is very weak.In order to solve this problem,the authors have established the structure of the sensor and designed weak signal detecting circuit of the sensor based on infrared spectrum absorption principle,differential de-noising principle and weak signal detecting principle.The authors have made experiments using CH4 gas.The results show that the circuit can remove noise effectively and detect weak electrical signal obtained from the detector.
基金This work is supported by National Natural Science Foundationof China (Grant No. 10232030,50076040,10472111)NationalBasic Research Program of China (2006CB300404).
文摘An optical readout uncooled infrared （IR） imaging detector of bimaterial cantilever array using knife-edge filter operation （KEFO） is demonstrated. The angle change of each cantilever in a focal plane array （FPA） can be simultaneously detected with a resolution of 10.5 degree. A deformation magnifying substrate-free micro-cantilever unit with multi-fold interval metaUized legs is specially designed and modeled. A FPA with 160×160 pixels is fabricated and thermal images with noise equivalent temperature difference （NETD） of 400 mK are obtained by this imaging detector.
基金This project was supported by the National Basic Research Program of China （No. 2007CB936602） and the Natural Science Foundation of Shandong Province in China （No. Y2008B20）.
文摘The fluorescence quenching of inclusion complex of neutral red （NR） and hydroxypropyl-β-cyclodextrin （HP-β-CD） carried by chlorobenzene was investigated. The fluorescence intensity of NR increased due to the formed inclusion complex of HP-β-CD and NR. But the fluorescence intensity of NR-HP-β-CD diminished when chlorobenzene was added, and there was a linear relationship between the fluorescence quenching value of the system （△IF = IF, NR-HP-β-CD - IF, CB-NB-NR-HP-β-CD） and the concentration of chlorobenzene. Based on this, a novel fluorescence quenching method for the determination of chlorobenzene with NR as a fluorescence probe has been developed. Under the optimal conditions, the linear range of calibration curve for the determination of chlorobenzene was 5.0 × 10^-8 - 8.0 × 10^-6 mol/L and the detection limit was 1.0 × 10^-8 mol/L. It has been applied to determination ofchlorobenzene in synthetic waste water samples with satisfactory results.
基金supported by the State Key Program for Basic Research of China(Grant No.2014CB921600)the National Natural Science Foundation of China(Grant Nos.11322441 and 11274331)the Fund of Shanghai Science and Technology Foundation(Grant No.14JC1406400)
文摘For non-destructive optical characterization, laser beam induced current(LBIC) microscopy has been developed into as a quantitative tool to examine individual photodiodes within a large pixel array. Two-dimensional LBIC microscopy, also generally called photocurrent mapping(PC mapping), can provide spatially resolved information about local electrical properties and p-n junction formation in photovoltaic infrared(including visible light) photodetectors from which it is possible to extract material and device parameters such as junction area, junction depth, diffusion length, leakage current position and minority carrier diffusion length etc. This paper presents a comprehensive review of research background, operating principle, fundamental issues, and applications of LBIC or PC mapping.
基金supported by the National Natural Science Foundation of China (61974014)the EPSRC Future Compound Semiconductor Manufacturing Hub (EP/P006973/1)。
文摘Multifunctional devices are of great interest for integration and miniaturization on the same platform, but simple addition of functionalities would lead to excessively large devices. Here, the photodetection and chemical sensing device is developed based on two-dimensional(2D) glassygraphene that meets similar property requirements for the two functionalities. An appropriate bandgap arising from the distorted lattice structure enables glassy graphene to exhibit comparable or even improved photodetection and chemical sensing capability, compared with pristine graphene. Due to strong interactions between glassy graphene and the ambient atmosphere, the devices are less sensitive to photoinduced desorption than the ones based on graphene. Consequently,the few-layer glassy graphene device delivers positive photoresponse, with a responsivity of 0.22 A W^(-1) and specific detectivity reaching ~10^(10) Jones under 405 nm illumination.Moreover, the intrinsic defects and strain in glassy graphene can enhance the adsorption of analytes, leading to high chemical sensing performance. Specifically, the extracted signalto-noise-ratio of the glassy graphene device for detecting acetone is 48, representing more than 50% improvement over the device based on graphene. Additionally, bias-voltage-and thickness-dependent volatile organic compound(VOC) sensing features are identified, indicating the few-layer glassy graphene is more sensitive. This study successfully demonstrates the potential of glassy graphene for integrated photodetection and chemical sensing, providing a promising solution for multifunctional applications further beyond.
基金supported by the National Key Basic Research Program of China (Grant No. 2014CB744300)the Specially Funded Program on National Key Scientific Instruments and Equipment Development (GrantNo. 2012YQ140005)+1 种基金the Beijing National Science Foundation (Grant No. 4122064)the Science Foundation of the China University of Petroleum (Beijing)
文摘In the present work,a nanoporous ZnO/n-Si structure has been proposed as a new type infrared photodetector.Triggered by one laser pulse with wavelength of 1064 nm,this structure exhibits a double-peak decay of transient photovoltage.Also,the time interval between these two peaks increases linearly with the increase of irradiated pulsed energy,indicating the promising application of this hetero-junction in photo-energy detection of infrared pulsed laser.A possible mechanism for this particular photoresponse has been discussed.
