Based on the idea of tilting a photoelectric conversion device,the monocrystalline silicon p-n junction device was tilted to make light incident upon the device at an angle of 45° with the normal of the device su...Based on the idea of tilting a photoelectric conversion device,the monocrystalline silicon p-n junction device was tilted to make light incident upon the device at an angle of 45° with the normal of the device surface,resulting in infrared multiple-internal-reflection inside the device.The internal reflection leads to path length increase of infrared light,making the enhancement of infrared absorption of the device.An increase of 11% in energy conversion efficiency has been obtained through tilting the device.展开更多
Infrared emissivity was studied in Zno.99Mo.olO （M is Mn, Fe or Ni） and Znl_xCoxO （x=0.01, 0.02, 0.03 and 0.04） powders synthesized by solid-state reaction at various temperatures. XRD patterns confirm the wurtzit...Infrared emissivity was studied in Zno.99Mo.olO （M is Mn, Fe or Ni） and Znl_xCoxO （x=0.01, 0.02, 0.03 and 0.04） powders synthesized by solid-state reaction at various temperatures. XRD patterns confirm the wurtzite structure of the prepared samples. No peaks of other phases arising from impurities are detected in Mn- and Co-doped ZnO, hut the peaks of ZnFe204 and NiO are observed in Zno.99Feo.010 and Zno.99Nio.o10. The SEM observations indicate that with larger grain sizes than those of Zn0.99Feo.010 and Zno.99Ni0.010, Co-doped ZnO exhibits smooth grain surfaces. The infrared absorption spectra show that infrared absorptions related to oxygen in Zn0.99M0.010 are much stronger than those in Co-doped ZnO. Co ions are dissolved into the ZnO lattice with Co2＋ state from XPS spectra analysis. The infrared emissivity results imply that the emissivity of Zno.99Ni0.010 is the highest （0.829） and that of Zno.99C00.010 is the lowest （0.784） at 1 200 ℃. The emissivity of Zno.99Co0.010 decreases to the minimum （0.752） at 1 150 ℃ and then increases with growing calcination temperature. As the Co doping content grows, the emissivity of Co-doped ZnO calcined at 1 200 ℃ falls to 0.758 in the molar fraction of 3% and then ascends.展开更多
文摘Based on the idea of tilting a photoelectric conversion device,the monocrystalline silicon p-n junction device was tilted to make light incident upon the device at an angle of 45° with the normal of the device surface,resulting in infrared multiple-internal-reflection inside the device.The internal reflection leads to path length increase of infrared light,making the enhancement of infrared absorption of the device.An increase of 11% in energy conversion efficiency has been obtained through tilting the device.
基金Project(2009K06_03) supported by the Scientific and Technological Program of Shaanxi Province,China
文摘Infrared emissivity was studied in Zno.99Mo.olO （M is Mn, Fe or Ni） and Znl_xCoxO （x=0.01, 0.02, 0.03 and 0.04） powders synthesized by solid-state reaction at various temperatures. XRD patterns confirm the wurtzite structure of the prepared samples. No peaks of other phases arising from impurities are detected in Mn- and Co-doped ZnO, hut the peaks of ZnFe204 and NiO are observed in Zno.99Feo.010 and Zno.99Nio.o10. The SEM observations indicate that with larger grain sizes than those of Zn0.99Feo.010 and Zno.99Ni0.010, Co-doped ZnO exhibits smooth grain surfaces. The infrared absorption spectra show that infrared absorptions related to oxygen in Zn0.99M0.010 are much stronger than those in Co-doped ZnO. Co ions are dissolved into the ZnO lattice with Co2＋ state from XPS spectra analysis. The infrared emissivity results imply that the emissivity of Zno.99Ni0.010 is the highest （0.829） and that of Zno.99C00.010 is the lowest （0.784） at 1 200 ℃. The emissivity of Zno.99Co0.010 decreases to the minimum （0.752） at 1 150 ℃ and then increases with growing calcination temperature. As the Co doping content grows, the emissivity of Co-doped ZnO calcined at 1 200 ℃ falls to 0.758 in the molar fraction of 3% and then ascends.
