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掺杂氧化锌薄膜的红外激光感生电压效应研究进展 被引量:1
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作者 赵嵩卿 张际蕊 +4 位作者 杨睿 施宏杰 刘义 白兴 杨立敏 《现代科学仪器》 2016年第2期13-17,共5页
作为第三代半导体的典型代表之一,氧化锌在光电探测器领域也有广泛应用。处于禁带内的缺陷能级会给氧化锌的光学和电学性质带来变化。掺杂会使得缺陷能级发生进一步的变化,导致氧化锌薄膜的光电性质发生变化。本文综述了基于硼、银和... 作为第三代半导体的典型代表之一,氧化锌在光电探测器领域也有广泛应用。处于禁带内的缺陷能级会给氧化锌的光学和电学性质带来变化。掺杂会使得缺陷能级发生进一步的变化,导致氧化锌薄膜的光电性质发生变化。本文综述了基于硼、银和钴掺杂氧化锌薄膜材料上发现的红外激光感生电压效应的研究进展,其中包括了光生电压随入射激光位置和角度发生变化的变化规律。由此得到,掺杂氧化锌薄膜可以用做红外激光探测。 展开更多
关键词 氧化锌 掺杂 红外激光探测器 位置和角度
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Laser beam induced current microscopy and photocurrent mapping for junction characterization of infrared photodetectors 被引量:15
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作者 QIU WeiCheng HU WeiDa 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2015年第2期1-13,共13页
For non-destructive optical characterization, laser beam induced current(LBIC) microscopy has been developed into as a quantitative tool to examine individual photodiodes within a large pixel array. Two-dimensional LB... For non-destructive optical characterization, laser beam induced current(LBIC) microscopy has been developed into as a quantitative tool to examine individual photodiodes within a large pixel array. Two-dimensional LBIC microscopy, also generally called photocurrent mapping(PC mapping), can provide spatially resolved information about local electrical properties and p-n junction formation in photovoltaic infrared(including visible light) photodetectors from which it is possible to extract material and device parameters such as junction area, junction depth, diffusion length, leakage current position and minority carrier diffusion length etc. This paper presents a comprehensive review of research background, operating principle, fundamental issues, and applications of LBIC or PC mapping. 展开更多
关键词 laser beam induced current photocurrent mapping focal plane array PHOTOCURRENT infrared photodetector
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Double-peaked decay of transient photovoltage in nanoporous ZnO/n-Si photodetector 被引量:1
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作者 LIU Hao FU Cheng ZHAO Kun 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2014年第6期1206-1208,共3页
In the present work,a nanoporous ZnO/n-Si structure has been proposed as a new type infrared photodetector.Triggered by one laser pulse with wavelength of 1064 nm,this structure exhibits a double-peak decay of transie... In the present work,a nanoporous ZnO/n-Si structure has been proposed as a new type infrared photodetector.Triggered by one laser pulse with wavelength of 1064 nm,this structure exhibits a double-peak decay of transient photovoltage.Also,the time interval between these two peaks increases linearly with the increase of irradiated pulsed energy,indicating the promising application of this hetero-junction in photo-energy detection of infrared pulsed laser.A possible mechanism for this particular photoresponse has been discussed. 展开更多
关键词 ZNO SOL-GEL PHOTOVOLTAGE PHOTODETECTOR
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