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纳电子封装 被引量:1
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作者 胡炎祥 吴丰顺 +2 位作者 吴懿平 王磊 张金松 《半导体技术》 CAS CSCD 北大核心 2005年第8期8-12,17,共6页
讨论了将成为21世纪电子制造领域的核心科学与技术的纳电子封装的基本概念以及由其产生的驱动力。阐述了纳电子封装的研究内容和纳电子封装的现状及发展趋势。
关键词 电子封装 米材料 芯片 纳互连
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A Novel Interconnect Crosstalk Parallel RLC Analyzable Model Based on the 65nm CMOS Process
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作者 朱樟明 钱利波 杨银堂 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第3期423-427,共5页
Based on the 65nm CMOS process,a novel parallel RLC coupling interconnect analytical model is presented synthetically considering parasitical capacitive and parasitical inductive effects. Applying function approximati... Based on the 65nm CMOS process,a novel parallel RLC coupling interconnect analytical model is presented synthetically considering parasitical capacitive and parasitical inductive effects. Applying function approximation and model order-reduction to the model, we derive a closed-form and time-domain waveform for the far-end crosstalk of a victim line under ramp input transition. For various interconnect coupling sizes, the proposed RLC coupling analytical model enables the estimation of the crosstalk voltage within 2.50% error compared with Hspice simulation in a 65nm CMOS process. This model can be used in computer-aided-design of nanometer SOCs. 展开更多
关键词 nanometer CMOS interconnect coupling crosstalk parallel RLC analytical model parameter extraction function approximation
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