纳秒脉冲消融联合顺铂对人宫颈癌细胞Hela生长的影响及机制

目的:通过研究纳秒脉冲消融与顺铂对人宫颈癌细胞Hela的体外作用,探讨低剂量纳秒脉冲电场联合低浓度顺铂之间的相互作用及机制。方法:采用CCK8法检测纳秒脉冲消融、顺铂对细胞增殖的影响,选取低于半抑制率(IC_(50))的低剂量(6个、12个)脉冲电场和低浓度(1μg/ml、2μg/ml)顺铂,CCK8法检测两者联合后的抑制率,计算联合作用指数(IC值),取IC值最低时的脉冲次数和顺铂浓度,将实验分为对照组、单纯脉冲电场组、单纯顺铂组和脉冲电场联合顺铂组,Annexin V/PI双染细胞后流式细胞仪检测凋亡率,Western blot法检测凋亡相关蛋白Bax、Bcl-2表达。结果:纳秒脉冲消融与顺铂均抑制细胞生长,低剂量脉冲电场和低浓度顺铂的联合作用指数均<0.9,表明两者有协同作用,脉冲电场联合顺铂组的凋亡率最高(P<0.05),且该组Bax蛋白表达最高,Bcl-2蛋白表达最低(P<0.05)。结论:低剂量脉冲电场联合低浓度顺铂具有协同作用,其中12个脉冲联合2μg/ml顺铂对肿瘤细胞抑制最显著,其机制可能与Bax高表达,促进细胞凋亡有关。

Metal cathode patterning for OLED by nanosecond pulsed laser ablation

In this paper,nanosecond pulsed laser is introduced to selectively ablate away indium tin oxide film and metal film without destroying the underlying layers for fabricating organic light-emitting diodes.By varying density of energy,pulse number and width of the laser,the influence on morphology of the laser trenches of indium tin oxide and metal films are investigated.It is presented that uniform ablation trench can be obtained with 16 laser pulses at 0.15 J/cm^2 for aluminum film and 10 laser pulses at 0.65 J/cm^2 for indium tin oxide film.It is found that the characteristics of the organic light-emitting diodes prepared with laser ablation are almost the same as those of that prepared with conventional patterning method.