介绍了一种采用宽禁带半导体二氧化钛纳米管阵列薄膜材料制备β伏特效应同位素电池的方法.通过对金属钛片的电化学阳极氧化制备了垂直定向、有序排列的二氧化钛纳米管阵列薄膜,研究了退火条件对二氧化钛纳米管阵列薄膜半导体光电性能的...介绍了一种采用宽禁带半导体二氧化钛纳米管阵列薄膜材料制备β伏特效应同位素电池的方法.通过对金属钛片的电化学阳极氧化制备了垂直定向、有序排列的二氧化钛纳米管阵列薄膜,研究了退火条件对二氧化钛纳米管阵列薄膜半导体光电性能的影响.通过与镍-63辐射源的集成封装,形成三明治结构镍-63/二氧化钛纳米管阵列薄膜/钛片的β伏特同位素电池.实验结果表明,基于氩气氛围下450?C退火的黑色二氧化钛纳米管阵列薄膜具有高的氧空位缺陷浓度和宽的可见-紫外吸收光谱.在使用β辐射总能量为10 m Ci的镍-63辐射源时,同位素电池的开路电压为1.02 V,短路电流75.52 n A,最大有效转换效率为22.48%.展开更多
A two-step fringing field dielectrophoretic assembly method for carbon nanotube thin film transistors （CNT-TFTs） fabrication was demonstrated. Densely aligned CNT arrays were assembled at the source and drain electr...A two-step fringing field dielectrophoretic assembly method for carbon nanotube thin film transistors （CNT-TFTs） fabrication was demonstrated. Densely aligned CNT arrays were assembled at the source and drain electrodes sequentially which form a cascade structure of the aligned CNT arrays. The cascade structure reduces the possibility of percolating metallic pathways in the channel, which is beneficial to device performance. In this way, both high on/off current ratio Ion/loft （up to 107） and high out-put current density （8.5μA/μm） were obtained in short channel length （1-2.5μm） CNT-TFTs. The reported CNT assem- bling strategy is site selective and highly efficient, which can be scaled up to large size substrates and leads to high throughput of CNT-TFTs fabrication.展开更多
文摘介绍了一种采用宽禁带半导体二氧化钛纳米管阵列薄膜材料制备β伏特效应同位素电池的方法.通过对金属钛片的电化学阳极氧化制备了垂直定向、有序排列的二氧化钛纳米管阵列薄膜,研究了退火条件对二氧化钛纳米管阵列薄膜半导体光电性能的影响.通过与镍-63辐射源的集成封装,形成三明治结构镍-63/二氧化钛纳米管阵列薄膜/钛片的β伏特同位素电池.实验结果表明,基于氩气氛围下450?C退火的黑色二氧化钛纳米管阵列薄膜具有高的氧空位缺陷浓度和宽的可见-紫外吸收光谱.在使用β辐射总能量为10 m Ci的镍-63辐射源时,同位素电池的开路电压为1.02 V,短路电流75.52 n A,最大有效转换效率为22.48%.
文摘A two-step fringing field dielectrophoretic assembly method for carbon nanotube thin film transistors （CNT-TFTs） fabrication was demonstrated. Densely aligned CNT arrays were assembled at the source and drain electrodes sequentially which form a cascade structure of the aligned CNT arrays. The cascade structure reduces the possibility of percolating metallic pathways in the channel, which is beneficial to device performance. In this way, both high on/off current ratio Ion/loft （up to 107） and high out-put current density （8.5μA/μm） were obtained in short channel length （1-2.5μm） CNT-TFTs. The reported CNT assem- bling strategy is site selective and highly efficient, which can be scaled up to large size substrates and leads to high throughput of CNT-TFTs fabrication.
