有效线导纳的仿真研究

利用有效导纳复功率流法研究了无限平板线激励下的功率传递规律,得出了线激励下的有效线导纳的理论公式,并对有效线导纳的功率传递特性进行了仿真研究。比较了有效线导纳理论公式和数值估计公式的计算结果,得到了数值估计公式的适用范围。然后研究了梁线激励作用下的功率传递特,并且对平板和梁上的功率传递规律进行了比较,结果为平板线激励的相对传递功率要略大于梁的相对传递功率。表明有效线导纳的理论公式在研究结构的功率传递上的灵活性和适用性。

基于有效线导纳的单筋圆柱壳振动声辐射分析

周向激励下加筋圆柱壳体振动和声辐射特性的研究是预测水下航行器壳体噪声的关键环节。基于有效线导纳理论和有效线导纳对简单圆柱壳体分析的基础,建立周向激励下单筋圆柱壳体的受力模型,得到振动响应计算公式,并对单筋圆柱壳体的振动响应和声辐射功率级进行实例计算和分析。计算结果表明:壳体表面加强筋处的局部振动响应得到有效抑制,幅度可降至原来的1%,但对整个壳体结构声辐射影响较小,功率仅降低1%左右。同时表明有效线导纳的理论能够正确有效地对周向激励下加筋圆柱壳体的振动响应和声辐射进行预报和分析。

板壳结构振动功率流的子结构线导纳法研究

采用子结构点导纳方法分析铺壳耦合结构振动特性时,需要将衔接线划分为一系列的点进行求解,较为烦琐。针对这一问题,该文提出了改进的子结构线导纳方法。首先建立了铺板和圆柱壳的耦合振动模型;然后采用模态展开法分别求解铺板和圆柱壳的机械线导纳,得到振动传递方程中的线导纳矩阵;最后求解耦合振动方程分析铺板与圆柱壳的振动功率流特性。将结果分别与ANSYS和AutoSEA的计算结果进行对比分析表明:该文提出的改进方法能够在宽频带内有效地计算板壳耦合结构的振动功率流特性,且求解过程简单,适于线衔接复杂结构的振动特性分析。

线激励下船舶混合构型加筋板的振动特性

文章对某船发电机舱纵向混合构型加筋板的导纳特性进行了研究,运用模态叠加法求解了结构在线激励作用下各特征线上的等效导纳。计算结果显示,根据振动能量在结构上的分布,可按频段将导纳特性分为输入主控区和传递主控区。输入主控区导纳呈现带通特性,三个通频带与相应的筋条结构对应。通过改变筋条的参数可以单独控制加筋板某个频段的导纳特性。

壳板组合结构功率传递分析

壳板耦合是圆柱壳组合结构中最常见的连接方式。为了研究壳板组合结构的功率传递规律,利用有效点导纳分析周向均布激励下圆柱壳表面振动响应的分布规律,得出圆柱壳振动响应理论计算公式;通过给出圆周线导纳的定义及其表达式,计算带端板圆柱壳的振动响应均方值之比。理论计算结果表明:壳板振动响应均方值之比随频率的增高逐渐增大,但其值始终小于1。实验测量结果与理论计算吻合,其值围绕理论值上下波动,表征了理论计算公式和分析结果的正确性和合理性。

Research and Application of Polymer Nanofibers

Nanometer materials include roughly nanoparticle,nanotube, nanowire, nanofiber, nanofilm and nanoblock, among which nanofiber is defined as material with nanometer-sized diameter and longer than 1 micron in length. The research development of polymer nanofibers, including manufacture methods and properties of some polymer nanofibers as well as their potential applications is reviewed.

Polaronic Effects of an Exciton in a Cylindrical Quantum Wire

The effects of exciton-optical phonon interaction on the binding energy and the total and reduced effective masses of an exciton in a cylindrical quantum wire have been investigated. We adopt a perturbative-PLL [T.D. Lee,F. Low, and D. Pines, Phys. Rev. B90 (1953) 297] technique to construct an effective Hamiltonian and then use a variational solution to deal with the exciton-phonon system. The interactions of exciton with the longitudinal-optical phonon and the surface-optical phonon have been taken into consideration. The numerical calculations for GaAs show that the influences of phonon modes on the exciton in a quasi-one-dimensional quantum wire are considerable and should not be neglected. Moreover the numerical results for heavy- and light-hole exciton are obtained, which show that the polaronic effects on two types of excitons are very different but both depend heavily on the sizes of the wire.

Temperature-Dependent Electrical Conductance of Bi Nanowires

The single crystal bismuth nanowire arrays grown along [0112] with the diameter of 30 nm was synthesized in the pore of anodic aluminum oxide templates through electrodeposi- tion process. The temperature dependent electric conductance of Bi nanowire arrays was measured from 78 K to 320 K. We found that the semimetal-to-semiconductor transition happened around 230 K for 30 nm Bi nanowires oriented along [0112] and the electric con- ductance of the nanowires had a strong temperature dependence.

Design and fabrication of ultrasmall arrayed waveguide grating multiplexers based on Si nanowire waveguides

The large refractive index difference between Si and SiO2 makes it possible to realize ultrasmall photonic integrated circuits. A 5×5 ultracompact arrayed waveguide grating multiplexer based on 500×250 nm Si nanowire waveguides is designed and fabricated by using the technologies of E-beam writing and amorphous-Si deposition. The mea- sured channel spacing is about 1.5 nm (close to the design value) and the channel crosstalk is about –8 dB.

Application and Self-assembly of Semiconductor Nanowire

The unique properties of semiconductor nanowires are introduced,and recent research progresses in application,self-assembly synthesis methods and mechanisms are summarized.

Fabrication of Highly Conductive Pd Nanowires using PDMS Transfer Method on DNA Scaffolds through Ethanol-Reduction

We have developed a simple, productive, and ettectlve poly（cllmetnysltoxane） rranu fer method to fabricate highly conductive Pd nanowires following DNA scaffolds on various substrates, based on ethanolreduction at low temperature. Pd nanoparticles were selectively deposited and confined onto the DNA templates on a PDMS sheet to form Pd nanowires and then the nanowires were transferred to other various substrates with a low occurrence of par asitic nanoparticles. The structure, morphology and the conductance of Pd nanowires were characterized with transmission electron microscopy, field emission scanning electron mi croscopy, and electrical transport measurement, respectively. Moreover, the growth process of the Pd nanowires was investigated by varying the incubation time and reaction temper ature. The present strategy provides a new method to fabricate extremely dense, highly conductive, and well aligned Pd nanowires on various substrates, which make it promising for building nanosensors and nanoelectronic devices.

Study of Properties in Superconducting Nanowires

We consider a simple approach of standard Ginzburg-Landan free-energy functional for a wire to study the properties of superconducting nanowires, and analyze the problem of quantum and thermally activated phase slips. In such systems one can consider a possibility for phase slips to be created not only due to thermal but also due to quantum fluctuations of a superconducting order parameter. We obtain some expressions of the free energy, the entropy, the specific heat and the bias current, respectively. The bias current I is a function of the temperature and the length of superconducting nanowires, and has a quantum phase slip. We obtain the stochastic dynamics of superconductiveresistive switching in hysteretic current-biased superconducting nanowires undergoing phase-slip fluctuations, and obtain the distribution of switching currents. Our results can be verified in modern experiments with superconducting nanowires.

Superposability of unsteady aerodynamic loads on bridge deck sections

The 2-dimensional unsteady aerodynamic forces,in the context of both a thin airfoil where theory of potential flow is always applicable and a bluff bridge-deck section where separated flow is typically induced,are investigated from a point of view of whether or not they conform to the principle of linear superposition in situations of various structural motions and wind gusts.It is shown that some basic preconditions that lead to the linear superposability of the unsteady aerodynamic forces in cases of thin airfoil sections are no longer valid for a bluff section.Theoretical models of bridge aerodynamics such as the one related to flutter-buffeting analysis and those concerning aerodynamic admittance(AA)functions,however,necessitate implicitly this superposability.The contradiction revealed in this work may throw light on the perplexing problem of AA functions pertaining to the description of buffeting loads of bridge decks.Some existing theoretical AA models derived from flutter derivatives according to interrelations valid only for thin airfoil theories,which have been employed rather extensively in bridge aerodynamics,are demonstrated to be illogical.Finally,with full understanding of the preconditions of the applicability of linear superposability of the unsteady aerodynamic forces,suggestions in regard to experiment-based AA functions are presented.

Study of the selective effect on cells induced by nanosecond pulsed electric field with the resistor-capacitor circuit model

A resistor-capacitor(RC)circuit model is proposed to study the effect of nanosecond pulsed electricfield on cells according to the structure and electrical parameters of cells.After a nanosecond step fieldhas been applied,the variation of voltages across cytomembrane and mitochondria membrane both in nor-mal and in malignant cells are studied with this model.The time for selectively targeting the mitochondriamembrane and malignant cell can be evaluated much easily with curves that show the variation of voltageacross each membrane with time.Ramp field is the typical field applied in electrobiology.The voltagesacross each membrane induced by ramp field are analyzed with this model.To selectively target the mito-chondria membrane,proper range of ramp slope is needed.It is relatively difficult to decide the range ofa slope to selectively affect the malignant cell.Under some conditions,such a range even does not exist.

Highly stretchable, electrically conductive textiles fabricated from silver nanowires and cupro fabrics using a simple dipping-drying method

In this study, we combined silver nanowires with cupro fabrics using a dipping- drying method to prepare electrically conductive fabrics. The silver nanowires were first adhered to and then absorbed by microfibers to form electrically conductive fibers. They also filled the gaps and spaces between the microfibers, and were stacked or piled together to form networks with high electrical conductivity. The electrically conductive fabric had low resistance and good stretchability, e.g., 0.0047-0.0091 Ωin the strain range of 0-190%. They also exhibited stable electrical conductivity, as well as excellent flexibility, which remained even when the fabric was stretched, shrunk, or bent. The results show that the electrically conductive fabric can be used as a smart textile, especially in fields associated with weaving, clothing, food products, lifestyle products, medicine, biology, electronics, aviation, and military equipment and accessories.

High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices

Gated transport measurements are the backbone of electrical characterization of nanoscale electronic devices. Scanning gate microscopy （SGM） is one such gating technique that adds crucial spatial information, accessing the localized properties of semiconductor devices. Nanowires represent a central device concept due to the potential to combine very different materials. However, SGM on semiconductor nanowires has been limited to a resolution in the 50-100 nm range. Here, we present a study by SGM of newly developed III-V semiconductor nanowire InAs/GaSb heterojunction Esaki tunnel diode devices under ultra-high vacuum. Sub-5 nm resolution is demonstrated at room temperature via use of quartz resonator atomic force microscopy sensors, with the capability to resolve InAs nanowire facets, the InAs/GaSb tunnel diode transition and nanoscale defects on the device. We demonstrate that such measurements can rapidly give important insight into the device properties via use of a simplified physical model, without the requirement for extensive calculation of the electrostatics of the system. Interestingly, by precise spatial correlation of the device electrical transport properties and surface structure we show the position and existence of a very abrupt （〈10 nm） electrical transition across the InAs/GaSb junction despite the change in material composition occurring only over 30-50 nm. The direct and simultaneous link between nanostructure composition and electrical properties helps set important limits for the precision in structural control needed to achieve desired device performance.

Novel fabrication of copper nanowire/cuprous oxidebased semiconductor-liquid junction solar cells

A Cu nanowire （NW）/cuprous oxide （Cu2O）-based semiconductor-liquid junction solar cell with a greatly enhanced efficiency and reduced cost was assembled. The Cu NWs function as a transparent electrode as well as part of the Cu NWs/ Cu2O coaxial structures, which remarkably benefit the charge separation. The best solar cell reached a conversion efficiency as high as 1.92% under a simulated AM1.5G illumination, which is 106 times higher than that of cells based on fluorine-doped tin oxide and Cu2O.

Design of ultra-compact wavelength splitter based on lithium niobate nanowire optical waveguides

A wavelength splitter with ultra-compact and simple structure is proposed and analyzed by using both plane wave expansion （PWE） method and finite difference time domain （FDTD） method. The device is based on directional coupling between two parallel lithium niobate （LiNbO3, LN） nanowire optical waveguides. The wavelength splitter with a coupling region length of 5 um can separate 1.3 um and 1.55 um wavelengths for corresponding outputs with transmittance higher than 97%.

MoS2-wrapped silicon nanowires for photoelectro- chemical water reduction

Integration of molybdenum disulfide （MoS2） onto high surface area photocathod is highly desired to minimize the overpotential for the solar-powered hydrogen evolution reaction （HER）. Semiconductor nanowires （NWs） are beneficial use in photoelectrochemistry because of their large electrochemically availab surface area and inherent ability to decouple light absorption and the transpo of minority carriers. Here, silicon （Si） NW arrays were employed as a mod photocathode system for MoS2 wrapping, and their solar-driven HER activil was evaluated. The photocathode is made up of a well-defined MoSJTiO2/Si coaxial NW heterostructure, which yielded photocurrent density up to 15 mA/cm2 （at 0 V vs. the reversible hydrogen electrode （RHE）） with goo stability under the operating conditions employed. This work reveals the earth-abundant electrocatalysts coupled with high surface area NW electrod~ can provide performance comparable to noble metal catalysts for photocathod hydrogen evolution.

Semiconductor nanowires for photovoltaic and photoelectrochemical energy conversion

Semiconductor nanowires （NW） possess several beneficial properties for efficient conversion of solar energy into electricity and chemical energy. Due to their efficient absorption of light, short distances for minority carriers to travel, high surface-to-volume ratios, and the availability of scalable synthesis methods, they provide a pathway to address the low cost-to-power requirements for widescale adaptation of solar energy conversion technologies. Here we highlight recent progress in our group towards implementation of NW components as photovoltaic and photoelectrochemical energy conversion devices. An emphasis is placed on the unique properties of these one-dimensional （1D） structures, which enable the use of abundant, low-cost materials and improved energy conversion efficiency compared to bulk devices.