Y2001-62866-206 0118989基于超快速非线性干涉仪的全光交换=All-opticalswitch based on an ultrafast nonlinear interometer[会,英]/Chen,Y.-Z.& Yao,M.-Y.//2000 Internation-al Conference on Communication Technology Procee...Y2001-62866-206 0118989基于超快速非线性干涉仪的全光交换=All-opticalswitch based on an ultrafast nonlinear interometer[会,英]/Chen,Y.-Z.& Yao,M.-Y.//2000 Internation-al Conference on Communication Technology ProceedingsVol.Ⅰ of Ⅱ.—206~209(HC)本文研究了基于超快速非线性干涉仪的10GHz全光交换,并求得消光比为11dB。展开更多
Y2000-62031-89 0006512利用光电发射显微镜对具有小于0.1μm 的空间分辨率的 MOS 氧化物缺陷位置的识别=Identification ofMOS oxide defect location with a spatial resolution lessthan 0.1μm using photoemission microscope[会,...Y2000-62031-89 0006512利用光电发射显微镜对具有小于0.1μm 的空间分辨率的 MOS 氧化物缺陷位置的识别=Identification ofMOS oxide defect location with a spatial resolution lessthan 0.1μm using photoemission microscope[会,英]/O-hzone,T.& Yuzaki,M.//1999 IEEE InternationalConference on Microelectronic Test Structures.—89~94(AZ)展开更多
文摘Y2001-62866-206 0118989基于超快速非线性干涉仪的全光交换=All-opticalswitch based on an ultrafast nonlinear interometer[会,英]/Chen,Y.-Z.& Yao,M.-Y.//2000 Internation-al Conference on Communication Technology ProceedingsVol.Ⅰ of Ⅱ.—206~209(HC)本文研究了基于超快速非线性干涉仪的10GHz全光交换,并求得消光比为11dB。
文摘Y2000-62031-89 0006512利用光电发射显微镜对具有小于0.1μm 的空间分辨率的 MOS 氧化物缺陷位置的识别=Identification ofMOS oxide defect location with a spatial resolution lessthan 0.1μm using photoemission microscope[会,英]/O-hzone,T.& Yuzaki,M.//1999 IEEE InternationalConference on Microelectronic Test Structures.—89~94(AZ)