A 25-channel 200 GHz arrayed waveguide grating （AWG） based on Si nanowire wavegnides is designed, simulated and fab- ricated. Transfer function method is used in the simulation and error analysis of AWG with width f...A 25-channel 200 GHz arrayed waveguide grating （AWG） based on Si nanowire wavegnides is designed, simulated and fab- ricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of-13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ul- traviolet lithography （DUV） and inductively coupled plasma etching （ICP） technologies, the devices are fabricated on sili- con-on-insulator （SOI） substrate.展开更多
基金supported by the National Key Research and Development Program of China(No.2016YFB0402504)the National Natural Science Foundation of China(Nos.61435013 and 61405188)
文摘A 25-channel 200 GHz arrayed waveguide grating （AWG） based on Si nanowire wavegnides is designed, simulated and fab- ricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of-13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ul- traviolet lithography （DUV） and inductively coupled plasma etching （ICP） technologies, the devices are fabricated on sili- con-on-insulator （SOI） substrate.
