Effect of thermal stabilization on the microstructure and mechanical property of directionally solidified Ti-46Al-0.5W-0.5Si （mole fraction, %） alloy was investigated. The specimens were thermal stabilized for diffe...Effect of thermal stabilization on the microstructure and mechanical property of directionally solidified Ti-46Al-0.5W-0.5Si （mole fraction, %） alloy was investigated. The specimens were thermal stabilized for different time （t） and directionally solidified at a constant growth rate of 30 μm/s and temperature gradient of 20 K/mm. Dependencies of the primary dendritic spacing （λ1）, secondary dendritic spacing （λ2）, interlamellar spacing （λL） and microhardness （HV） on holding time were determined. The values of the λ1, λ2 and λL increase with the increase of t, and the value of HV decreases with the increase of t. The increase of t is helpful to obtain a good directional solidification structure. However, it reduces the mechanical property of the directionally solidified TiAl alloy. The optimized value of t is about 30 min.展开更多
The growth behavior of the complex intermetallic compounds(IMCs)formed at the interface of Cu/SnPbInBiSb high entropy alloy solder joints was explored.The growth inhibition mechanism of the IMCs at the Cu/SnPbInBiSb s...The growth behavior of the complex intermetallic compounds(IMCs)formed at the interface of Cu/SnPbInBiSb high entropy alloy solder joints was explored.The growth inhibition mechanism of the IMCs at the Cu/SnPbInBiSb solid−liquid reaction interface was revealed.The results showed that the growth rate of the complex IMCs obviously decreased at the Cu/SnPbInBiSb solid−liquid reaction interface.The maximum average thickness of IMCs only reached up to 1.66μm after reflowing at 200℃for 10 min.The mechanism for the slow growth of the complex IMCs was analyzed into three aspects.Firstly,the high entropy of the liquid SnPbInBiSb alloy reduced the growth rate of the complex IMCs.Secondly,the distorted lattice of complex IMCs restrained the diffusion of Cu atoms.Lastly,the higher activation energy(40.9 kJ/mol)of Cu/SnPbInBiSb solid−liquid interfacial reaction essentially impeded the growth of the complex IMCs.展开更多
A comprehensive review on interfacial reactions to form silicides between metal and Si nanowire or wafer is given.Formation of silicide contacts on Si wafers or Si nanowires is a building block needed in making curren...A comprehensive review on interfacial reactions to form silicides between metal and Si nanowire or wafer is given.Formation of silicide contacts on Si wafers or Si nanowires is a building block needed in making current-based Si devices.Thus,the microstructure control of silicide formation on the basis of kinetics of nucleation and growth has relevant applications in microelectronic technology.Repeating events of homogeneous nucleation of epitaxial silicides of Ni and Co on Si in atomic layer reaction is presented.The chemical effort on intrinsic diffusivities in diffusion-controlled layer-typed intermetallic compound growth of Ni2Si is analyzed.展开更多
基金Projects (50801019, 51071062, 50771041) supported by the National Natural Science Foundation of ChinaProject (2011CB605504) supported by the National Basic Research Program of China
文摘Effect of thermal stabilization on the microstructure and mechanical property of directionally solidified Ti-46Al-0.5W-0.5Si （mole fraction, %） alloy was investigated. The specimens were thermal stabilized for different time （t） and directionally solidified at a constant growth rate of 30 μm/s and temperature gradient of 20 K/mm. Dependencies of the primary dendritic spacing （λ1）, secondary dendritic spacing （λ2）, interlamellar spacing （λL） and microhardness （HV） on holding time were determined. The values of the λ1, λ2 and λL increase with the increase of t, and the value of HV decreases with the increase of t. The increase of t is helpful to obtain a good directional solidification structure. However, it reduces the mechanical property of the directionally solidified TiAl alloy. The optimized value of t is about 30 min.
基金supported by the National Natural Science Foundation of China (No.U2241223)the Heilongjiang Touyan Innovation Team Program,China (No.HITTY-20190013)the Fundamental Research Funds for the Central Universities,China (No.AUEA5770400622)。
文摘The growth behavior of the complex intermetallic compounds(IMCs)formed at the interface of Cu/SnPbInBiSb high entropy alloy solder joints was explored.The growth inhibition mechanism of the IMCs at the Cu/SnPbInBiSb solid−liquid reaction interface was revealed.The results showed that the growth rate of the complex IMCs obviously decreased at the Cu/SnPbInBiSb solid−liquid reaction interface.The maximum average thickness of IMCs only reached up to 1.66μm after reflowing at 200℃for 10 min.The mechanism for the slow growth of the complex IMCs was analyzed into three aspects.Firstly,the high entropy of the liquid SnPbInBiSb alloy reduced the growth rate of the complex IMCs.Secondly,the distorted lattice of complex IMCs restrained the diffusion of Cu atoms.Lastly,the higher activation energy(40.9 kJ/mol)of Cu/SnPbInBiSb solid−liquid interfacial reaction essentially impeded the growth of the complex IMCs.
文摘A comprehensive review on interfacial reactions to form silicides between metal and Si nanowire or wafer is given.Formation of silicide contacts on Si wafers or Si nanowires is a building block needed in making current-based Si devices.Thus,the microstructure control of silicide formation on the basis of kinetics of nucleation and growth has relevant applications in microelectronic technology.Repeating events of homogeneous nucleation of epitaxial silicides of Ni and Co on Si in atomic layer reaction is presented.The chemical effort on intrinsic diffusivities in diffusion-controlled layer-typed intermetallic compound growth of Ni2Si is analyzed.
