A novel lateral insulated gate bipolar transistor on a silicon-on-insulator substrate SOI-LIGBT with a special low-doped P-well structure is proposed.The P-well structure is added to attach the P-body under the channe...A novel lateral insulated gate bipolar transistor on a silicon-on-insulator substrate SOI-LIGBT with a special low-doped P-well structure is proposed.The P-well structure is added to attach the P-body under the channel so as to reduce the linear anode current degradation without additional process.The influence of the length and depth of the P-well on the hot-carrier HC reliability of the SOI-LIGBT is studied.With the increase in the length of the P-well the perpendicular electric field peak and the impact ionization peak diminish resulting in the reduction of the hot-carrier degradation. In addition the impact ionization will be weakened with the increase in the depth of the P-well which also makes the hot-carrier degradation decrease.Considering the effect of the low-doped P-well and the process windows the length and depth of the P-well are both chosen as 2 μm.展开更多
The prototypical reaction of F+HD→DF+H was investigated at collision energies from 3.03 meV to 17.97 meV using a crossed molecular beam apparatus with multichannel Rydberg tagging time-of-flight detection.Significant...The prototypical reaction of F+HD→DF+H was investigated at collision energies from 3.03 meV to 17.97 meV using a crossed molecular beam apparatus with multichannel Rydberg tagging time-of-flight detection.Significant contributions from both the BornOppenheimer(BO)forbidden reaction F^(*)(^(2)P_(1/2))+HD→DF+H and the BO-allowed reaction F(^(2)P_(3/2))+HD→DF+H were observed.In the backward scattering direction,the contribution from the BO-forbidden reaction F^(*)(^(2)P_(1/2))+HD was found to be considerably greater than the BO-allowed reaction F(^(2)P_(3/2))+HD,indicating the non-adiabatic effects play an important role in the dynamics of the title reaction at low collision energies.Collision-energy dependence of differential cross sections(DCSs)in the backward scattering direction was found to be monotonously decreased as the collision energy decreases,which does not support the existence of resonance states in this energy range.DCSs of both BO-allowed and BO-forbidden reactions were measured at seven collision energies from 3.03 meV to 17.97 meV.It is quite unexpected that the angular distribution gradually shifts from backward to sideway as the collision energy decreases from 17.97 meV to 3.03 meV,suggesting some unknown mechanisms may exist at low collision energies.展开更多
基金The National Natural Science Foundation of China(No.61204083)the Natural Science Foundation of Jiangsu Province(No.BK2011059)the Program for New Century Excellent Talents in University(No.NCET-10-0331)
文摘A novel lateral insulated gate bipolar transistor on a silicon-on-insulator substrate SOI-LIGBT with a special low-doped P-well structure is proposed.The P-well structure is added to attach the P-body under the channel so as to reduce the linear anode current degradation without additional process.The influence of the length and depth of the P-well on the hot-carrier HC reliability of the SOI-LIGBT is studied.With the increase in the length of the P-well the perpendicular electric field peak and the impact ionization peak diminish resulting in the reduction of the hot-carrier degradation. In addition the impact ionization will be weakened with the increase in the depth of the P-well which also makes the hot-carrier degradation decrease.Considering the effect of the low-doped P-well and the process windows the length and depth of the P-well are both chosen as 2 μm.
基金supported by the National Natural Science Foundation of China(No.21822305,No.21688102,No.22003067)the Chinese Academy of Sciences(No.XDB17000000)。
文摘The prototypical reaction of F+HD→DF+H was investigated at collision energies from 3.03 meV to 17.97 meV using a crossed molecular beam apparatus with multichannel Rydberg tagging time-of-flight detection.Significant contributions from both the BornOppenheimer(BO)forbidden reaction F^(*)(^(2)P_(1/2))+HD→DF+H and the BO-allowed reaction F(^(2)P_(3/2))+HD→DF+H were observed.In the backward scattering direction,the contribution from the BO-forbidden reaction F^(*)(^(2)P_(1/2))+HD was found to be considerably greater than the BO-allowed reaction F(^(2)P_(3/2))+HD,indicating the non-adiabatic effects play an important role in the dynamics of the title reaction at low collision energies.Collision-energy dependence of differential cross sections(DCSs)in the backward scattering direction was found to be monotonously decreased as the collision energy decreases,which does not support the existence of resonance states in this energy range.DCSs of both BO-allowed and BO-forbidden reactions were measured at seven collision energies from 3.03 meV to 17.97 meV.It is quite unexpected that the angular distribution gradually shifts from backward to sideway as the collision energy decreases from 17.97 meV to 3.03 meV,suggesting some unknown mechanisms may exist at low collision energies.
