Short-channel high-mobility Si/Si_(0.5)Ge_(0.5)/silicon-on-insulator(SOI)quantum-well p-type metal-oxide-semiconductor field effect transistors(p-MOSFETs)were fabricated and electrically characterized.The transistors ...Short-channel high-mobility Si/Si_(0.5)Ge_(0.5)/silicon-on-insulator(SOI)quantum-well p-type metal-oxide-semiconductor field effect transistors(p-MOSFETs)were fabricated and electrically characterized.The transistors show good transfer and output characteristics with Ion/Ioff ratio up to 105 and sub-threshold slope down to 100 mV/dec.HfO_(2)/TiN gate stack is employed and the equivalent oxide thickness of 1.1 nm is achieved.The effective hole mobility of the transistors reaches 200 cm^(2)/V·s,which is 2.12 times the Si universal hole mobility.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61306126,61306127 and 61106015the Science and Technology Commission of Shanghai Municipality under Grant Nos 12ZR1453000,12ZR1453100 and 12ZR1436300CAS International Collaboration and Innovation Program on High Mobility Materials Engineering.
文摘Short-channel high-mobility Si/Si_(0.5)Ge_(0.5)/silicon-on-insulator(SOI)quantum-well p-type metal-oxide-semiconductor field effect transistors(p-MOSFETs)were fabricated and electrically characterized.The transistors show good transfer and output characteristics with Ion/Ioff ratio up to 105 and sub-threshold slope down to 100 mV/dec.HfO_(2)/TiN gate stack is employed and the equivalent oxide thickness of 1.1 nm is achieved.The effective hole mobility of the transistors reaches 200 cm^(2)/V·s,which is 2.12 times the Si universal hole mobility.
