基金Supported by the National Natural Science Foundation of China under Grant Nos 60476006 and 60576014, the Shanghai Major State Technology Programme under Grant No 055211001, the National High Technology Research and Development Programme of China under Grant No 2006AA03Z315, the Shanghai Rising Star Programme (07QH14017), and the Special Funds for Major State Basic Research Programme of China under Grant No 2006CB302706.
文摘与埋葬的 MOSi2 层合并的高度做砷的 Si-on-insulator (SOI ) 底层被制作在减少瞄准 SiGe 异质接面的收集者系列抵抗 SOI 上的双极的晶体管(HBT ) ,从而提高截止频率(f (T)) 性能并且增加 f (T)(f (TMAX )) 的最大的价值。在中等电流的 f (T) 表演被提高,电流为 f (T)= 要求 15 GHz 被一半减少。f (TMAX ) 的价值被 30% 改进。