The fabrication of Bragg gratings on silicon-on-insulator （SOI） rib waveguides using electron-beam lithography is presented. The grating waveguide is optimally designed for actual photonic integration. Experimental ...The fabrication of Bragg gratings on silicon-on-insulator （SOI） rib waveguides using electron-beam lithography is presented. The grating waveguide is optimally designed for actual photonic integration. Experimental and theoretical evaluations of the Bragg grating are demonstrated. By thinning the SOl device layer and deeply etching the Bragg grating, a large grating coupling coefficient of 30cm^-1 is obtained.展开更多
In this work we show the influence of the edge-effect on the electric field distribution and, hence, on the inner and outer capacitance in an inclined-plate capacitor system surrounded by an insulating medium taking i...In this work we show the influence of the edge-effect on the electric field distribution and, hence, on the inner and outer capacitance in an inclined-plate capacitor system surrounded by an insulating medium taking into account the thickness of the conducting plates for a complete set of dimensions and insulating characteristics. Where available, we compare our results with previously published works. Finally, using statistical tools, we obtain approximate expression for computing the relationship between capacitance and insulation material characteristics, insulation gap, plate dimensions and angle.展开更多
In this paper, we find that topological insulators with time-reversal symmetry and inversion symmetry featuring two-dimensional quantum spin Hall （QSH） state can be divided into 16 classes, which are characterized b...In this paper, we find that topological insulators with time-reversal symmetry and inversion symmetry featuring two-dimensional quantum spin Hall （QSH） state can be divided into 16 classes, which are characterized by four Z2 topological variables ζk =0, 1 at four points with high symmetry in the Brillouin zone. We obtain the corresponding edge states for each one of these sixteen classes of QSHs. In addition, it is predicted that massless fermionic excitations appear at the quantum phase transition between different QSH states. In the end, we also briefly discuss the threedimensional case.展开更多
A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on in...A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on insulator） is proposed. There are two original points in the proposed structure. One is the formation of the double floating p-layers under the HV-interconnection to prevent potential distribution in the drift from disturbing due to the HV-interconnection, and the other is a good combination between the LDMOS structure and multiple trench isolation to obtain the isolation performance over 600 V. From the proposed structure, the high blocking capability of the LDMOS, including both off- and on-breakdown voltages over 600 V and high hot carrier instability, and the isolation performance over 1,200 V can be obtained successfully. This paper will show numerical and experimental results in detail.展开更多
文摘The fabrication of Bragg gratings on silicon-on-insulator （SOI） rib waveguides using electron-beam lithography is presented. The grating waveguide is optimally designed for actual photonic integration. Experimental and theoretical evaluations of the Bragg grating are demonstrated. By thinning the SOl device layer and deeply etching the Bragg grating, a large grating coupling coefficient of 30cm^-1 is obtained.
文摘In this work we show the influence of the edge-effect on the electric field distribution and, hence, on the inner and outer capacitance in an inclined-plate capacitor system surrounded by an insulating medium taking into account the thickness of the conducting plates for a complete set of dimensions and insulating characteristics. Where available, we compare our results with previously published works. Finally, using statistical tools, we obtain approximate expression for computing the relationship between capacitance and insulation material characteristics, insulation gap, plate dimensions and angle.
基金Supported by the National Natural Science Foundation of China under Grant No.10874017National Basic Research Program of China(973 Program)under Grant No.2011CB921803
文摘In this paper, we find that topological insulators with time-reversal symmetry and inversion symmetry featuring two-dimensional quantum spin Hall （QSH） state can be divided into 16 classes, which are characterized by four Z2 topological variables ζk =0, 1 at four points with high symmetry in the Brillouin zone. We obtain the corresponding edge states for each one of these sixteen classes of QSHs. In addition, it is predicted that massless fermionic excitations appear at the quantum phase transition between different QSH states. In the end, we also briefly discuss the threedimensional case.
文摘A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on insulator） is proposed. There are two original points in the proposed structure. One is the formation of the double floating p-layers under the HV-interconnection to prevent potential distribution in the drift from disturbing due to the HV-interconnection, and the other is a good combination between the LDMOS structure and multiple trench isolation to obtain the isolation performance over 600 V. From the proposed structure, the high blocking capability of the LDMOS, including both off- and on-breakdown voltages over 600 V and high hot carrier instability, and the isolation performance over 1,200 V can be obtained successfully. This paper will show numerical and experimental results in detail.
