An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measu...An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.展开更多
为缓解中国西部地区淡水供需矛盾,研制了一种大功率核磁共振找水仪发射机。该发射机由DDS（Direct Digital Frequency Synthesis）芯片产生频率为当地拉莫尔频率的信号,通过大功率开关器件IGBT（Isolation Gate Bipolar Transistor）向...为缓解中国西部地区淡水供需矛盾,研制了一种大功率核磁共振找水仪发射机。该发射机由DDS（Direct Digital Frequency Synthesis）芯片产生频率为当地拉莫尔频率的信号,通过大功率开关器件IGBT（Isolation Gate Bipolar Transistor）向天线等负载输出交变电流,从而激发地下水中氢质子产生可供检测的核磁信号,已成功应用到地面核磁共振找水仪样机中。与目前世界上唯一商品化的法国NUMIS（Nuclear Magnetic Induction System）系统相比,其频率范围（1～4 kHz）比NUMIS（0.8～3 kHz）宽,最大脉冲矩（18000 A.ms）比NUMIS（9000 A.ms）大,能够应用于更深层地下水的探测。展开更多
提出采用有源箝位抑制IGBT关断浪涌电压的方法。IGBT集电极和门极间采用瞬态电压抑制器(Tran-sient Voltage Suppressor,简称TVS)构成有源箝位电路,并根据IGBT耐压值和直流母线电压选择箝位电压值。当关断IGBT时,浪涌电压击穿TVS并箝位...提出采用有源箝位抑制IGBT关断浪涌电压的方法。IGBT集电极和门极间采用瞬态电压抑制器(Tran-sient Voltage Suppressor,简称TVS)构成有源箝位电路,并根据IGBT耐压值和直流母线电压选择箝位电压值。当关断IGBT时,浪涌电压击穿TVS并箝位集射极电压,同时升高IGBT门极电压,减缓IGBT关断,抑制浪涌电压。在1.5 MW风电变流器上进行了相关实验,实验结果验证了该方法的有效性,并在成本、体积和可靠性等方面有一定的优势。展开更多
A novel lateral insulated gate bipolar transistor on a silicon-on-insulator substrate SOI-LIGBT with a special low-doped P-well structure is proposed.The P-well structure is added to attach the P-body under the channe...A novel lateral insulated gate bipolar transistor on a silicon-on-insulator substrate SOI-LIGBT with a special low-doped P-well structure is proposed.The P-well structure is added to attach the P-body under the channel so as to reduce the linear anode current degradation without additional process.The influence of the length and depth of the P-well on the hot-carrier HC reliability of the SOI-LIGBT is studied.With the increase in the length of the P-well the perpendicular electric field peak and the impact ionization peak diminish resulting in the reduction of the hot-carrier degradation. In addition the impact ionization will be weakened with the increase in the depth of the P-well which also makes the hot-carrier degradation decrease.Considering the effect of the low-doped P-well and the process windows the length and depth of the P-well are both chosen as 2 μm.展开更多
文摘An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.
文摘为缓解中国西部地区淡水供需矛盾,研制了一种大功率核磁共振找水仪发射机。该发射机由DDS（Direct Digital Frequency Synthesis）芯片产生频率为当地拉莫尔频率的信号,通过大功率开关器件IGBT（Isolation Gate Bipolar Transistor）向天线等负载输出交变电流,从而激发地下水中氢质子产生可供检测的核磁信号,已成功应用到地面核磁共振找水仪样机中。与目前世界上唯一商品化的法国NUMIS（Nuclear Magnetic Induction System）系统相比,其频率范围（1～4 kHz）比NUMIS（0.8～3 kHz）宽,最大脉冲矩（18000 A.ms）比NUMIS（9000 A.ms）大,能够应用于更深层地下水的探测。
文摘提出采用有源箝位抑制IGBT关断浪涌电压的方法。IGBT集电极和门极间采用瞬态电压抑制器(Tran-sient Voltage Suppressor,简称TVS)构成有源箝位电路,并根据IGBT耐压值和直流母线电压选择箝位电压值。当关断IGBT时,浪涌电压击穿TVS并箝位集射极电压,同时升高IGBT门极电压,减缓IGBT关断,抑制浪涌电压。在1.5 MW风电变流器上进行了相关实验,实验结果验证了该方法的有效性,并在成本、体积和可靠性等方面有一定的优势。
基金The National Natural Science Foundation of China(No.61204083)the Natural Science Foundation of Jiangsu Province(No.BK2011059)the Program for New Century Excellent Talents in University(No.NCET-10-0331)
文摘A novel lateral insulated gate bipolar transistor on a silicon-on-insulator substrate SOI-LIGBT with a special low-doped P-well structure is proposed.The P-well structure is added to attach the P-body under the channel so as to reduce the linear anode current degradation without additional process.The influence of the length and depth of the P-well on the hot-carrier HC reliability of the SOI-LIGBT is studied.With the increase in the length of the P-well the perpendicular electric field peak and the impact ionization peak diminish resulting in the reduction of the hot-carrier degradation. In addition the impact ionization will be weakened with the increase in the depth of the P-well which also makes the hot-carrier degradation decrease.Considering the effect of the low-doped P-well and the process windows the length and depth of the P-well are both chosen as 2 μm.
