An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measu...An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.展开更多
Utilizing hybrid integration model.the integrated model optocouplers have successfully developed.The design,fabrication and characteristic parameters of the devices are presented.
Optimized 2×2 switches based on silicon-on-insulator (SOI) were demonstrated. In the design, single mode rib waveguidesand multimode interferences (MMIs) are connected by tapered waveguides to reduce the mode cou...Optimized 2×2 switches based on silicon-on-insulator (SOI) were demonstrated. In the design, single mode rib waveguidesand multimode interferences (MMIs) are connected by tapered waveguides to reduce the mode coupling loss between thetwo types of waveguides. The average insertion loss of the switches is about -16.9 dB and the excess loss of one is measuredof -1.3 dB. The worst crosstalk is larger than 25 dB. Experimental results indicate that some of the main characteristics ofoptical switches are improved in the modified design, which is according with theoretic analysis. The novel design can beused to improve the characteristics of optical switch matrixes based on 2×2 switch units.展开更多
A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on in...A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on insulator） is proposed. There are two original points in the proposed structure. One is the formation of the double floating p-layers under the HV-interconnection to prevent potential distribution in the drift from disturbing due to the HV-interconnection, and the other is a good combination between the LDMOS structure and multiple trench isolation to obtain the isolation performance over 600 V. From the proposed structure, the high blocking capability of the LDMOS, including both off- and on-breakdown voltages over 600 V and high hot carrier instability, and the isolation performance over 1,200 V can be obtained successfully. This paper will show numerical and experimental results in detail.展开更多
A cable circuit of a substation in the United Kingdom showed high level of PD activities during a survey using hand hold PD testing equipment. The authors were invited to carry out on-site PD testing experiment to fur...A cable circuit of a substation in the United Kingdom showed high level of PD activities during a survey using hand hold PD testing equipment. The authors were invited to carry out on-site PD testing experiment to further diagnose and locate the potential problem of the cable system. This paper presents the experience of the present authors carrying out the cable test. Following a brief introduction to the experiment equipments and physical connections, the paper analyses the data collected from the testing, including PD pulse shape analysis, frequency spectrum analysis and phase resolved PD pattern analysis. Associated with PD propagation direction identification, PD source diagnosis and localisation was made. Four different types of sensors, which were adapted during the testing, are shown to have different frequency bandwidths and performed differently. Aider comparing the parameters of the sensor and the PD signals detected by individual sensor, optimal PD monitoring bandwidth for cable system is suggested.展开更多
This paper analyzes the effects of the voltage across insulator of 69 kV and 24 kV lines installed on the same pole. The case studies illustrated the lightning strike to direct top pole and mid span of ground wire usi...This paper analyzes the effects of the voltage across insulator of 69 kV and 24 kV lines installed on the same pole. The case studies illustrated the lightning strike to direct top pole and mid span of ground wire using the ATP-EMTP （Alternative Transient Program-Electromagnetic Transient Program）. The results found that when lightning strike the voltage across the 69 kV line insulator at mid span is 1.55 times and 1.34 times higher than at top pole when the front time is 0.25/100μs and 10/350 μs, respectively. When lightning strike the voltage across the 24 kV line at mid span is 1.04 times and 0.64 times higher than at top pole when the front time is 0.25/100μs and 10/350μs, respectively. So the effect of lightning strike is more severe at mid span than at the direct top pole, especially for the 69 kV insulator.展开更多
Low voltage operating organic devices and circuits have been realized using atomic layer deposition deposited aluminum oxide thin film as dielectric layer. The dielectric film has per unit area capacitance of 165 nF/c...Low voltage operating organic devices and circuits have been realized using atomic layer deposition deposited aluminum oxide thin film as dielectric layer. The dielectric film has per unit area capacitance of 165 nF/cm2 and leakage current of 1 nA/cm2 at 1 MV/cm. The devices and circuits use the small-molecule hydrocarbon pentacene as the active semiconductor material. Transistors,inverters,and ring oscillators with operating voltage lower than 5 V were obtained. The mobility of organic field-effect transistors was extracted to be 0.16 cm2/Vs in saturation range,the threshold voltage is 0.3 V,and the on/off current ratio is larger than 105. The gain of inverters is estimated to be 12 at -5 V supply voltage,and the propagation delay is 0.25 ms per stage in 5-stage ring oscillators.展开更多
文摘An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.
文摘Utilizing hybrid integration model.the integrated model optocouplers have successfully developed.The design,fabrication and characteristic parameters of the devices are presented.
基金This work was supported in part by the National Science Founda-tion of China (Grant No.60577044)the Ministry of Scienceand Technology "973" Plan (No.2006CB302803)
文摘Optimized 2×2 switches based on silicon-on-insulator (SOI) were demonstrated. In the design, single mode rib waveguidesand multimode interferences (MMIs) are connected by tapered waveguides to reduce the mode coupling loss between thetwo types of waveguides. The average insertion loss of the switches is about -16.9 dB and the excess loss of one is measuredof -1.3 dB. The worst crosstalk is larger than 25 dB. Experimental results indicate that some of the main characteristics ofoptical switches are improved in the modified design, which is according with theoretic analysis. The novel design can beused to improve the characteristics of optical switch matrixes based on 2×2 switch units.
文摘A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on insulator） is proposed. There are two original points in the proposed structure. One is the formation of the double floating p-layers under the HV-interconnection to prevent potential distribution in the drift from disturbing due to the HV-interconnection, and the other is a good combination between the LDMOS structure and multiple trench isolation to obtain the isolation performance over 600 V. From the proposed structure, the high blocking capability of the LDMOS, including both off- and on-breakdown voltages over 600 V and high hot carrier instability, and the isolation performance over 1,200 V can be obtained successfully. This paper will show numerical and experimental results in detail.
文摘A cable circuit of a substation in the United Kingdom showed high level of PD activities during a survey using hand hold PD testing equipment. The authors were invited to carry out on-site PD testing experiment to further diagnose and locate the potential problem of the cable system. This paper presents the experience of the present authors carrying out the cable test. Following a brief introduction to the experiment equipments and physical connections, the paper analyses the data collected from the testing, including PD pulse shape analysis, frequency spectrum analysis and phase resolved PD pattern analysis. Associated with PD propagation direction identification, PD source diagnosis and localisation was made. Four different types of sensors, which were adapted during the testing, are shown to have different frequency bandwidths and performed differently. Aider comparing the parameters of the sensor and the PD signals detected by individual sensor, optimal PD monitoring bandwidth for cable system is suggested.
文摘This paper analyzes the effects of the voltage across insulator of 69 kV and 24 kV lines installed on the same pole. The case studies illustrated the lightning strike to direct top pole and mid span of ground wire using the ATP-EMTP （Alternative Transient Program-Electromagnetic Transient Program）. The results found that when lightning strike the voltage across the 69 kV line insulator at mid span is 1.55 times and 1.34 times higher than at top pole when the front time is 0.25/100μs and 10/350 μs, respectively. When lightning strike the voltage across the 24 kV line at mid span is 1.04 times and 0.64 times higher than at top pole when the front time is 0.25/100μs and 10/350μs, respectively. So the effect of lightning strike is more severe at mid span than at the direct top pole, especially for the 69 kV insulator.
基金supported by the National Basic Research Program of China ("973" Project)(Grant Nos.2009CB320302,2011CB808404)the Na-tional Natural Science Foundation of China (Grant Nos.60676001,60676008)
文摘Low voltage operating organic devices and circuits have been realized using atomic layer deposition deposited aluminum oxide thin film as dielectric layer. The dielectric film has per unit area capacitance of 165 nF/cm2 and leakage current of 1 nA/cm2 at 1 MV/cm. The devices and circuits use the small-molecule hydrocarbon pentacene as the active semiconductor material. Transistors,inverters,and ring oscillators with operating voltage lower than 5 V were obtained. The mobility of organic field-effect transistors was extracted to be 0.16 cm2/Vs in saturation range,the threshold voltage is 0.3 V,and the on/off current ratio is larger than 105. The gain of inverters is estimated to be 12 at -5 V supply voltage,and the propagation delay is 0.25 ms per stage in 5-stage ring oscillators.
