CICC型Bi-2212超导磁体绝缘纤维预处理方法研究

选择成分均为72%γAl_(2)O_(3)+28%SiO_(2)的氧化铝纤维制品作为Bi-2212超导磁体绝缘纤维材料并进行空气热处理除碳。采用强度测试、SEM、TG-DSC等测试手段,对三种氧化铝纤维制品(宽25mm/厚0.2mm氧化铝纤维带A、宽25mm/厚0.35mm氧化铝纤维带B和200tex/3股/捻度80氧化铝纤维束C)的热失重、纤维表面形貌、纤维强度进行分析表征。结果表明,其耐温性好,热失重过程并未发现晶相转变的吸放热峰。纤维经过空气热处理后,表面浸润剂氧化挥发,纤维裸露,无缺陷暴露,直径变化不明显,强度下降不超过25%,绝缘性能提高。分析结果表明,通过600℃、2h空气热处理可以有效提高氧化铝纤维绝缘性能。

有限温度下三角绝缘铁磁体的磁振子软化

在二维绝缘铁磁系统基础上建立了一个磁振子声子的相互作用模型.利用格林函数方法研究了磁振子声子相互作用下的三角绝缘铁磁体的磁振子谱;计算了布里渊区的主要对称点线上的磁振子色散曲线;比较了纵向声子与横向声子对磁振子谱的软化与磁振子谱线增宽的影响;讨论了各项参数以及温度的变化对磁振子谱的软化与磁振子谱线增宽的影响.得到了如下结论:①越接近布里渊区边界,磁振子声子耦合越强,自旋劲度系数D越小,材料的德拜温度ΘD越小,在铁磁相变温度Tc以下,随温度的升高,磁振子软化越明显;②离Γ点越远,磁振子软化越明显,谱线增宽越强,磁振子能谱的振荡与磁振子声子耦合强度无关;③在Σ线(包括Γ,M点)与Z线(包括M,K点)上,纵向声子比横向声子对磁振子的软化作用更大·

超导磁体绝缘用玻璃纤维真空热处理前后性能研究

Nb_(3)Sn超导磁体需要长时间640℃真空热处理才能形成超导相,对不同超导磁体绝缘结构使用的国产耐辐照玻璃纤维、HS/6高强玻璃纤维、美国S-2高强玻璃纤维在640℃真空热处理前后分别进行真空压力浸渍(VPI),探究国产玻璃纤维在640℃真空热处理后能否达到美国S-2高强玻璃纤维性能,满足Nb_(3)Sn超导磁体使用要求。测试其在室温下的拉伸、层间剪切强度,直流耐压击穿强度。真空热处理后,三种玻璃纤维增强树脂基复合材料拉伸、层间剪切强度都有大幅下降,HS/6高强玻璃纤维在热处理前后力学性能最好,保留率最高,满足使用要求;但HS/6高强玻璃纤维增强树脂基复合材料的电气强度比S-2高强玻璃纤维增强树脂基复合材料电气强度至少低40%,不能满足使用要求,耐辐照玻璃纤维增强树脂基复合材料丧失绝缘性能。

高电阻率稀土永磁材料研究进展

高性能低成本稀土永磁材料是现代技术和国防尖端技术的关键组成部分,尤其是在牵引电机和发动机等旋转电力设备中。但是其相当高的电导率造成服役过程中槽纹波、逆变器等产生较大的涡流损耗,从而导致磁体的温度升高,甚至引起热退磁。为解决磁体的涡流及温升问题,近年来,围绕高电阻率稀土永磁材料展开了一系列研究工作。对掺杂剂种类、无机绝缘包覆技术和高电阻率复合磁体制备技术等方面进行了综述分析,同时总结了粘结、热压和烧结高电阻率稀土永磁材料的研究现状,并展望了高电阻率复合磁体的发展前景。

超导体/铁磁体绝缘层-超导体隧道结的直流Josephson效应

在超导体 铁磁体 绝缘层 超导体结 (S F I S)中 ,运用Bogoliubov deGennes(BdG)方程和Furusaki Tsukada(FT)电流公式 ,计算铁磁超导共存态的自洽方程和S F I S结中的直流Josephson电流 .研究表明 ,铁磁超导态的磁交换能h对准粒子的Andreev反射有抑制作用 ,使得S F I

Tunneling Conductance in Quantum-Wire/Ferromagnetic-Insulator/d-Wave Superconductor Junction

We have studied the quasiparticle transport in quantum-wire /ferromagnetic-insulator/d wave super- conductor Junction （q/FI/d） in the framework of the Blonder-Tinkham-Klapwijk model. We calculate the tunneling conductance in q/FI/d as a function of the bias voltage at zero temperature and finite temperature based on Bogoliubov- de Gennes equations. Different from the case in normal-metal/insulator/d wave superconductor Junctions, the zero-bias conductance peaks vanish for the single-mode case. The tunneling conductance spectra depend on the magnitude of the exchange interaction at the ferromagnetic-insulator.

Chromatin domain boundaries: insulators and beyond

The eukaryotic genome is organized into functionally and structurally distinct domains, representing regulatory unitsfor gene expression and chromosome behavior. DNA sequences that mark the border between adjacent domains are theinsulators or boundary elements, which are required in maintenance of the function of different domains. Some insula-tors need others enable to play insulation activity. Chromatin domains are defined by distinct sets of post-translationallymodified histones. Recent studies show that these histone modifications are also involved in establishment of sharpchromatin boundaries in order to prevent the spreading of distinct domains. Additionally, in some loci, the high-orderchromatin structures for long-range looping interactions also have boundary activities, suggesting a correlation betweeninsulators and chromatin loop domains. In this review, we will discuss recent progress in the field of chromatin domainboundaries.

Josephson Effect in FS/I/N/I/FS Tunnel Junctions

The Bogoliubov de Gennes equation is applied to the study of coherence effects in the ferromagnetic superconductor/insulator/normal metal/insulator/ferromagnetic/superconductor （FS/I/N/I/FS） junction. We calculated the Josephson current in FS/I/N/I/FS as a function of exchange field in ferromagnetic superconductor, temperature, and normal metal thickness. It is found that the Josephson critical current in FS/I/N/I/FS exhibits oscillations as a function of the length of normal metal. The exchange field always suppresses the Josephson critical current Ip for a parallel configuration of the magnetic moments of two ferromagnetic superconductor （FS） electrodes. In the antiparallel configuration, the Josephson critical current IAv at the minimum values of oscillation increases with the exchange field for strong barrier strength and at low temperatures.

Light Emission Characteristics of Metal/Insulator/Metal and Metal/Insulator/Si Tunnel Junctions Mediated by Surface Plasmon-polaritons

The Au/Al2O3/Al metal/insulator/metal junction(MIMJ) and Au/SiO2/Si metal/insulator/Si junction(MISJ) have been constructed successfully. The light emission of these junctions was mediated by surface plasmon-polaritons(SPPs) under surface roughness. The light emission from MISJ was more uniform and stable than that from MIMJ. The light power of MISJ was about 2~3 orders higher than that of MIMJ. The light emission spectrum of MISJ was analyzed especially. In the spectrum, there was one main peak located at the wavelength of 610 nm^640 nm, which was mainly due to the couple of SPP with the surface roughness at the Au/air and Au/SiO2 interfaces. A weak peak located at the shorter wavelength region in the spectrum was also found, which was caused by the direct radiation of doped-Si plasma oscillation.

有限温度下光频支声子-磁振子相互作用对磁振子寿命的影响

在二维复式正方Heisenberg铁磁系统的基础上建立了磁振子-声子相互作用模型.利用松原格林函数理论研究了系统的磁振子寿命,计算了布里渊区的主要对称点线上的磁振子衰减的变化曲线,比较了磁性离子的与非磁性离子的光频支声子对磁振子衰减的影响以及各项参数的变化和温度对磁振子衰减的影响.发现光频支声子-磁振子耦合对磁振子衰减起主要作用,尤其是纵向光频支声子对磁振子衰减起更大的作用,并且非磁性离子的光频支声子对磁振子衰减的作用比磁性离子的光频支声子对磁振子衰减的作用更显著.根据关系式-Im∑*(1)(k)=/(2τ)可以对磁振子寿命进行判断.

Demonstration of topological wireless power transfer

Recent advances in non-radiative wireless power transfer(WPT)technique essentially relying on magnetic resonance and near-field coupling have successfully enabled a wide range of applications.However,WPT systems based on double resonators are severely limited to short-or mid-range distance,due to the deteriorating efficiency and power with long transfer distance.WPT systems based on multi-relay resonators can overcome this problem,which,however,suffer from sensitivity to perturbations and fabrication imperfections.Here,we experimentally demonstrate a concept of topological wireless power transfer(TWPT),where energy is transferred efficiently via the near-field coupling between two topological edge states localized at the ends of a one-dimensional radiowave topological insulator.Such a TWPT system can be modelled as a parity-time-symmetric Su-Schrieffer-Heeger(SSH)chain with complex boundary potentials.Besides,the coil configurations are judiciously designed,which significantly suppress the unwanted cross-couplings between nonadjacent coils that could break the chiral symmetry of the SSH chain.By tuning the inter-and intra-cell coupling strengths,we theoretically and experimentally demonstrate high energy transfer efficiency near the exceptional point of the topological edge states,even in the presence of disorder.The combination of topological metamaterials,non-Hermitian physics,and WPT techniques could promise a variety of robust,efficient WPT applications over long distances in electronics,transportation,and industry.

Magnetically Controlled Electronic Transport Properties of a Ferromagnetic Junction on the Surface of a Topological Insulator

We have investigated the transport properties of the Dirac fermions through a ferromagnetic barrier junction on the surface of a strong topologicM insulator. The current-voltage characteristic curve and the tunneling conductance are calculated theoretically. Two interesting transport features are predicted： observable negative differential conductances and linear conductances tunable from unit to nearly zero. These features can be magnetically manipulated simply by changing the spacial orientation of the magnetization. Our results may contribute to the development of high-speed switching and functional applications or electricalIy controlled magnetization switching.

Large unsaturated positive and negative magnetoresistance in Weyl semimetal TaP

After successfully growing single-crystal TaP, we measured its longitudinal resistivity （Pxx） and Hall resistivity （Pyx） at magnetic fields up to 9 T in the temperature range of 2-300 K. At 8 T, the magnetoresistance （MR） reached 3.28 ×10^5% at 2 K, 176% at 300 K. Neither value appeared saturated. We confirmed that TaP is a hole-electron compensated semimetal with a low carrier concentration and high hole mobility ofμh=3.71 × 105 cm2/V s, and found that a magnetic-field-induced metal-insulator transition occurs at room temperature. Remarkably, because a magnetic field （H） was applied in parallel to the electric field （E）, a negative MR due to a chiral anomaly was observed and reached -3000% at 9 T without any sign of saturation, either, which is in contrast to other Weyl semimetals （WSMs）. The analysis of the Shubnikov-de Haas （SdH） oscillations superimposed on the MR revealed that a nontrivial Berry＇s phase with a strong offset of 0.3958, which is the characteristic feature of charge carriers enclosing a Weyl node. These results indicate that TaP is a promising candidate not only for revealing fundamental physics of the WSM state but also for some novel applications.

Defect energetics and magnetic properties of 3d-transition-metal-doped topological crystalline insulator SnTe

The introduction of magnetism in SnTe-class topological crystalline insulators is a challenging subject with great importance in the quantum device applications. Based on the first-principles calculations, we have studied the defect energetics and magnetic properties of 3d transition-metal(TM)-doped SnTe. We find that the doped TM atoms prefer to stay in the neutral states and have comparatively high formation energies, suggesting that the uniform TMdoping in SnTe with a higher concentration will be difficult unless clustering. In the dilute doping regime, all the magnetic TMatoms are in the high-spin states, indicating that the spin splitting energy of 3d TM is stronger than the crystal splitting energy of the SnTe ligand. Importantly, Mn-doped SnTe has relatively low defect formation energy, largest local magnetic moment, and no defect levels in the bulk gap, suggesting that Mn is a promising magnetic dopant to realize the magnetic order for the theoretically-proposed large-Chern-number quantum anomalous Hall effect(QAHE) in SnTe.

Persistent surface states with diminishing gap in MnBi_(2)Te_(4)/Bi_(2)Te_(3) superlattice antiferromagnetic topological insulator

Magnetic topological quantum materials(TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic(AFM) topological insulator MnBi_(2)Te_(4) that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM compound Mn Bi4 Te7 where Bi_(2)Te_(3) and MnBi_(2)Te_(4) layers alternate to form a superlattice. Using spatial-and angleresolved photoemission spectroscopy, we identified ubiquitous(albeit termination dependent) topological electronic structures from both Bi_(2)Te_(3) and MnBi_(2)Te_(4) terminations. Unexpectedly, while the bulk bands show strong temperature dependence correlated with the AFM transition, the topological surface states with a diminishing gap show negligible temperature dependence across the AFM transition.Together with the results of its sister compound MnBi_(2)Te_(4), we illustrate important aspects of electronic structures and the effect of magnetic ordering in this family of magnetic TQMs.

Research Progress on Colossal Anisotropic Magnetoresistive Effect

Perovskite manganites show exotic functionalities due to the coupling between spin, charge, orbital and lattice, such as metal-insulator transition, colossal magnetoresistance （ CMR ） , charge-orbital order and phase separation. Recently, an extraordinary anisotropic magnetoresistance （ AMR ） has been observed in perovskite manganite single crystals. The AMR value is about 2 orders larger than that of the conventional 3E transition metals and alloys, which is attributed to tunable metal-insulator transition temperature modulated by the magnetic field. This result provides a new route for exploring novel AMR materials and their applications.