An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measu...An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.展开更多
According to the plasma dispersion effect of silicon(Si),a silicon-on-insulator(SOI) based variable optical attenuator(VOA) with p-i-n lateral diode structure is demonstrated in this paper.A wire rib waveguide with su...According to the plasma dispersion effect of silicon(Si),a silicon-on-insulator(SOI) based variable optical attenuator(VOA) with p-i-n lateral diode structure is demonstrated in this paper.A wire rib waveguide with sub-micrometer cross section is adopted.The device is only about 2 mm long.The power consumption of the VOA is 76.3 mW(0.67 V,113.9 mA),and due to the carrier absorption,the polarization dependent loss(PDL) is 0.1dB at 20dB attenuation.The raise time of the VOA is 34.5 ns,the fall time is 37 ns,and the response time is 71.5 ns.展开更多
文摘An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.
基金supported by the National High Technology Research and Development Program of China(No.2013AA031402)
文摘According to the plasma dispersion effect of silicon(Si),a silicon-on-insulator(SOI) based variable optical attenuator(VOA) with p-i-n lateral diode structure is demonstrated in this paper.A wire rib waveguide with sub-micrometer cross section is adopted.The device is only about 2 mm long.The power consumption of the VOA is 76.3 mW(0.67 V,113.9 mA),and due to the carrier absorption,the polarization dependent loss(PDL) is 0.1dB at 20dB attenuation.The raise time of the VOA is 34.5 ns,the fall time is 37 ns,and the response time is 71.5 ns.
